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    SI4288DY Search Results

    SI4288DY Datasheets (1)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4288DY-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 40V 9.2A 8SO Original PDF 10
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    Vishay Intertechnologies SI4288DY-T1-GE3

    - Tape and Reel (Alt: SI4288DY-T1-GE3)
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    Mouser Electronics SI4288DY-T1-GE3
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    Vishay Intertechnologies SI4288DY-T1-GE3.

    Dual Mosfet, Dual N Channel, 40V, 9.2A; |Vishay SI4288DY-T1-GE3.
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    Vishay Siliconix SI4288DY-T1-GE3

    40 VOLTS 9.2 AMPS 3.1 WATTS
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    Quest Components SI4288DY-T1-GE3 40
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    Vishay Huntington SI4288DY-T1-GE3

    MOSFET 2N-CH 40V 9.2A 8SO
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    Win Source Electronics SI4288DY-T1-GE3 2,000
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    SI4288DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    S10-28

    Abstract: Si4288DY
    Contextual Info: SPICE Device Model Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si4288dy18-jul-08s10-28 PDF

    Contextual Info: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested


    Original     		si4288dy2002/95/ecsi4288dy-t1-ge32011/65/eu+112-mar-12 PDF

    si4288

    Contextual Info: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested


    Original     		si4288dy2002/95/ecsi4288dy-t1-ge311-mar-11+1si4288 PDF

    Contextual Info: Si4288DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		si4288dyan6091234m9196u+52191m1132u3313m9361m2223m PDF

    si4288

    Abstract: SO-8 gs 069 si42 SI4288DY-T1-GE3
    Contextual Info: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested


    Original     		si4288dy2002/95/ecsi4288dy-t1-ge32011/65/eu+412-mar-12si4288so-8 gs 069si42 PDF

    Contextual Info: Si4288DY Vishay Siliconix Dual N-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 RDS(on) () ID (A)a 0.020 at VGS = 10 V 9.2 0.023 at VGS = 4.5 V 8.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFETPower MOSFET • 100 % Rg and UIS Tested


    Original     		si4288dy2002/95/ecsi4288dy-t1-ge32011/65/eu+2js709a02-oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF