SI4200 Search Results

Si4200-BM

Abstract: Si4200 SEN 1327 Si4133T-bm DCS 1800 RX SAW Filter Si4133T Si4201 SAFEK881MFL0T00R00 Si4201-BM transceiver gsm
Contextual Info: Aero A E R O T R A N S C E I V E R F O R GSM A N D G PR S WIRELESS COMMUNICATIONS Features Quad-band support: GSM 850 Class 4, small MS E-GSM 900 Class 4, small MS DCS 1800 Class 1 PCS 1900 Class 1 Si4200: 5 x 5 mm QFN32 Si4201: 4 x 4 mm QFN20 Si4133T: 5 x 5 mm QFN28

67125

Contextual Info: SPICE Device Model Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

74216

Contextual Info: Si4200DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Si4200

Abstract: Si4200-BM transceiver gsm si4134tbm si4134t-bm Si4201-BM silicon labs aero
Contextual Info: Aero+ A E R O + T R A N S C E I V E R F O R G S M A N D G P R S WIRELESS COMMUNICATIONS Features Pin Assignments Top View Si4200-G-GM Quad-band support: GSM 850 Class 4, small MS E-GSM 900 Class 4, small MS DCS 1800 Class 1 PCS 1900 Class 1 Si4200: 5 x 5 mm QFN32

Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 25 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)

Si4200

Abstract: si4200dy
Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET

Contextual Info: Aero A E R O TR A N S C E I V E R FOR GSM AND GPRS WIRELESS COMMUNICATIONS Features „ GND NC NC GND VDD RFOG 25 24 RFOD 23 VDD IOP 2 CKN 3 CKP 4 TXIP 5 TXIN 6 19 RFIDP TXQP 7 18 RFIPN 22 RFIGN 17 RFIPP 9 10 11 12 13 SCLK SEN 19 18 17 16 2 15 SDO RXQN

Si4200

Abstract: block diagram of RF Transceiver Si4200-BM Si4201 gsm transceiver DAC Si4201-BM GSM TCXO mlp32 Si4200-DS GSM vco
Contextual Info: Aero /Aero+ GSM/GPRS Transceiver Chipsets INTEGRATED TRANSCEIVERS FOR MULTI-BAND GSM/GPRS WIRELESS COMMUNICATIONS FEATURES • Complete multi-band GSM cellular radio front-end using 100% CMOS RF technology – GSM 850 – E-GSM 900 – DCS 1800 – PCS 1900

Si4200-BM

Abstract: Si4200 GSM Transceiver block diagram of RF Transceiver Si4200-EVB Si4200-DS DCS1800 direct conversion GSM transceiver MLP20 MLP32
Contextual Info: Aero GSM Transceiver Chipset INTEGRATED TRANSCEIVER FOR GSM900, DCS1800 AND PCS1900 WIRELESS COMMUNICATIONS FEATURES • Complete triple-band GSM cellular radio front end using CMOS RF technology • Unparalleled integration – 50% less board area – 80% fewer components

Contextual Info: SHIELD lOOOpF, 2 KV NOTES: 1.0 PINS WITHOUT ELECTRICAL CONNECTION ARE OMITTED. ELECTRICAL SPECIFICATIONS: CURRENT CAPABILITY: 3 5 0 mA 1.0 TURNS RATIO: P 5 - P 2 - P 4 P3 - P 2 - P 1 ) 2.0 INDUCTANCE: 3.0 LEAKAGE INDUCTANCE: 4.0 INTERWINDING CAPACITANCE : (P 5,P 2,P 4) TO (J6.J3)

Contextual Info: 10OOpF, 2KV P 3- 75 POWER jg y r n P 8P 5- 75 75 75 - .018uF, 100V POWER |g m n 1 1:1 P 2- . 1uF, 100V NOTES: J8 J7 J6 j_ iîr r m P1 — PINS WITHOUT ELECTRICAL CON N EC TION ARE OMITTED. J4 1:1 P 1 1- 1 .0 J5 I j3 IJ2 IJ1 P10- r P12ELECTRICAL SPECIFICATIONS:

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®