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SI4200DY Datasheets (1)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4200DY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 8A 8SOIC	Original	PDF		10

SI4200DY Price and Stock

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Vishay Intertechnologies


Vishay Intertechnologies SI4200DY-T1-GE3 Trans MOSFET N-CH 25V 8A 8-Pin SOIC N T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	SI4200DY-T1-GE3		2,500		1	1 $1.95 10 $1.46 100 $1.21 1000 $0.64 10000 $0.64	Buy Now
Quest Components ()	SI4200DY-T1-GE3		2,000			1 $3.12 10 $3.12 100 $3.12 1000 $1.17 10000 $1.17	Buy Now
	SI4200DY-T1-GE3		2,000			1 $2.60 10 $2.60 100 $2.60 1000 $0.81 10000 $0.71	Buy Now
	SI4200DY-T1-GE3		516			1 $3.12 10 $3.12 100 $3.12 1000 $1.29 10000 $1.29	Buy Now

SI4200DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
67125 Contextual Info: SPICE Device Model Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si4200dy 18-jul-08 67125	PDF
Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	si4200dy 2002/95/ec si4200dy-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	si4200dy 2002/95/ec si4200dy-t1-ge3 11-mar-11	PDF
74216 Contextual Info: Si4200DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si4200dy an609 3426u 4216m +67811m 3599u 9461m 5641m 5572m 74216	PDF
Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	si4200dy 2002/95/ec si4200dy-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 25 ID (A) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET • Compliant to RoHS Directive 2002/95/EC Qg (Typ.)	Original	si4200dy 2002/95/ec si4200dy-t1-ge3 2011/65/eu +112-mar-12	PDF
Si4200 Abstract: si4200dy Contextual Info: Si4200DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 8a 0.030 at VGS = 4.5 V 7.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Gen III Power MOSFET	Original	si4200dy 2002/95/ec si4200dy-t1-ge3 18-jul-08 +1si4200	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF