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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI8487DB-T1-E1		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V MICROFOOT	Original	PDF		11

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Vishay Intertechnologies SI8487DB-T1-E1 Trans MOSFET P-CH 30V 4.9A 4-Pin Micro Foot T/R
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Vishay Siliconix SI8487DB-T1-E1 SI8487DB-T1-E1 P-CHANNEL MOSFET TRANSISTOR, 6.2 A, 30 V, 4-PIN MICRO FOOT
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SI8487 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline	Original	si8487db si8409db 848xx 2002/95/ec +32011/65/eu js709a 02-oct-12	PDF
Contextual Info: SPICE Device Model Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si8487db 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
si8487 Contextual Info: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition	Original	si8487db si8409db 2002/95/ec 11-mar-11 +1si8487	PDF
63635 Abstract: Si8487DB Contextual Info: SPICE Device Model Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si8487db 11-mar-11 63635	PDF
SI8487DB-T1-E1 Abstract: 71990 SI8902 si8487 Contextual Info: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline	Original	si8487db si8409db 2011/65/eu 2002/95/ec +512-mar-12 si8487db-t1-e1 71990 si8902 si8487	PDF
Contextual Info: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition	Original	si8487db si8409db 2002/95/ec 11-mar-11	PDF
Contextual Info: Si8487DB Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline	Original	si8487db si8409db 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 ID • Halogen-free According to IEC 61249-2-21 Definition	Original	si8487db si8409db 2002/95/ec 11-mar-11	PDF
Contextual Info: Si8487DB Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY ID (A)a, e VDS (V) RDS(on) () Max. 0.031 at VGS = - 10 V - 7.7 - 30 0.035 at VGS = - 4.5 V - 7.3 0.045 at VGS = - 2.5 V - 6.4 TrenchFET Power MOSFET Low-on Resistance Ultra-Small 1.6 mm x 1.6 mm Maximum Outline	Original	si8487db si8409db 2011/65/eu 2002/95/ec +112-mar-12	PDF
SI-8100D Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,	Original	si8407db si8439db si8415db si8425db +15si8473edb si8413db si8487db si8409db si8483db si8499db si-8100d si8461 si8466 si8425 si8812 si8802 si8466edb si8489 si8100db	PDF
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of	Original	sc-75 si1865ddl si7997dp sia923aedj +5sia929dj sc-70 sia527dj sia537edj vmn-pt0197-1402	PDF
Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,	Original	1212-8s si7157dp siss23dn si5415aedu +2com/mosfets/12-rated-on-res/vmn-ms6912-1406	PDF
Si7141 Abstract: SiA447DJ SI7615A Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET AND TEC I INNOVAT O L OGY TrenchFET Gen III - P-Channel N HN POWER MOSFETs O 19 62-2012 Breakthrough P-Channel Technology Dramatically Cuts RDS on	Original	sc-75 sc-70 vmn-pt0197-1209 si7141 +2sia447dj si7615a	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF