SISS23DN Search Results

Contextual Info: SPICE Device Model SiSS23DN www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C

Contextual Info: SiSS23DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0045 at VGS = - 4.5 V - 50e 0.0063 at VGS = - 2.5 V - 50e 0.0115 at VGS = - 1.8 V - 50e Qg (Typ.) 93 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Contextual Info: SiSS23DN Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0045 at VGS = - 4.5 V - 50e 0.0063 at VGS = - 2.5 V - 50e 0.0115 at VGS = - 1.8 V - 50e Qg (Typ.) 93 nC • TrenchFET Power MOSFET • Low Thermal Resistance PowerPAK®

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of

Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,