SI7157DP Search Results

Contextual Info: Si7157DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0016 at VGS = - 10 V - 60d 0.0020 at VGS = - 4.5 V - 60d 0.0032 at VGS = - 2.5 V - 60d • TrenchFET Gen III P-Channel Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: Si7157DP Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () Max. ID (A) 0.0016 at VGS = - 10 V - 60d 0.0020 at VGS = - 4.5 V - 60d 0.0032 at VGS = - 2.5 V - 60d • TrenchFET Gen III P-Channel Power MOSFET • 100 % Rg and UIS Tested

Contextual Info: SPICE Device Model Si7157DP www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs MOSFETs - Lowest On-Resistance Per Area Achieved for a P-Channel MOSFET TrenchFET Gen III - P-Channel Breakthrough P-Channel Technology Dramatically Cuts RDS on KEY BENEFITS • Lowest on-resistance per area achieved for a p-channel MOSFET: down to half of

Contextual Info: Vishay Intertechnology, Inc. P-CHANNEL GEN III MOSFETs PowerPAK Thermally Enhanced, High Current Handling Capability LITTLE FOOT® Wide Range of Battery Operated Applications MICRO FOOT® Best RDS on per Outline Area DUAL P-CHANNELS Thermally Enhanced,