71990 Search Results

71990

Contextual Info: II 12 10 9 8 T 6 1 71990 3 1 2 NOTES: 1 FILLED 59.90) C OLO R 1.875 A R EA , .092 - 1020_ (0.5 1) .212 iiiiiiiiyyiiiiiiiiifliifli (2.54) MATERIALS; AND LCP IS AND 2) FRONT DRAW 3) ARE POLYMER), AR E BOTH MADE RATED .0 1 3/ (0 .3 3 ) T HIC K . 0 0 0 0 3 0 / L 0 0 0 7 6 ) MINIMUM

UP78

Abstract: Aaa SMD MARKING
Contextual Info: Si8401DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.065 at VGS = - 4.5 V - 4.9 0.095 at VGS = - 2.5 V - 4.1 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

Acc 2089

Abstract: ACC MICRO 2089 acc micro 2168 acc micro 2048 ACC MICRO 2086 ACC Microelectronics Corporation ACC Microelectronics ACC MICRO 2178 acc micro 2016 acc micro 2066
Contextual Info: 2016 ACC MICRO 2016 BUFFER AND MUX LOGIC DATA BOOK MARCH 1997 Revision 2.0 ACC Microelectronics Corporation, 2500 Augustine Drive, Santa Clara, CA 95054 Phone: 408 980-0622 Fax: (408) 980-0626 TM ACC Micro 2016 ACC Microelectronics Corporation 2500 Augustine Drive,

Contextual Info: Part Number: DDGK14C 14.2mm 0.56" SINGLE DIGIT NUMERIC DISPLAY www.SunLED.com Features Package Schematics ● Low power consumption ● Robust package ● I.C. Compatible ● Standard configuration: Gray face w/ white segments ● Optional black face provides superior color

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

SI-8100D

Abstract: si8100 Si8100DB
Contextual Info: Si8100DB Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a, d RDS(on) () (Max.) 25 0.0108 at VGS = 10 V 9.5 0.0124 at VGS = 4.5 V 8.9 Qg (Typ.) 6.8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: 1.90mm .075" Pitch LFH Matrix 75 Plug Cable Kit FEATURES AND SPECIFICATIONS Features and Benefits Electrical Voltage: 40V Current: 1.0A Contact Resistance: 20mΩ max. Dielectric Withstanding Voltage: 1000V Insulation Resistance: 100 MΩ min. • Cable assemblies available through Molex-approved

Contextual Info: This document was generated on 03/30/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 51-26-0010 Active Overview: Description: LFH 1.90mm Pitch LFH™ Matrix 75 Shielded Plug, 96 Circuits, Right Angle Documents: Drawing PDF

Contextual Info: This document was generated on 06/22/2012 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 71989-2003 Active Overview: Description: LFH 1.90mm Pitch LFH™ Matrix 75 Plug Cable Kit, Terminal Stick, 130 Circuits Documents: 3D Model

CD 8227

Abstract: trompeter TAI-165 TAI-165 TCS-PL80 8227
Contextual Info: DASH B A CABLES NO ACCOMMODATED DIA FLATS -7 TRC-5Q-2/TRC-75-2 -B 8227. BELDEN TWC-78-2, RB-10B, -9 TWC-124-2 -10 754E. W.E.CO. RG-22 -11 760A, W.E.CO. .750 .687 -12 16PEVL. W.E.CO. -13 TRF-59. TIMES -13A 8232, BELDEN -14 21-529.ESSEX 8233. BELDEN -14A -15

Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

Contextual Info: Si8473EDB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () - 20 ID (A)a, e 0.041 at VGS = - 4.5 V - 7.1 0.055 at VGS = - 2.5 V - 6.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

smd marking AAAA

Contextual Info: Si8402DB Vishay Siliconix 20-V N-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.037 at VGS = 4.5 V 7.3 20 0.039 at VGS = 2.5 V 7.1 0.043 at VGS = 1.8 V 6.8 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging

UP78

Contextual Info: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

Contextual Info: Si8487DB www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY -30 • TrenchFET power MOSFET RDS(on) () MAX. ID (A) a, e 0.031 at VGS = -10 V -7.7 • Low-on resistance 0.035 at VGS = -4.5 V -7.3 • Ultra-small 1.6 mm x 1.6 mm maximum outline

Contextual Info: 7 DRAWING MADE IN T H I R D A N G L E T H I S DRAWING 6 5 4 3 2 1 PROJECTION IS UNPUBLISHED COPYRIGHT RELEASED 19 BY AMP FOR P U B L I C A T I O N INCORPORATED. ALL L OC ,19 INTERNATIO NAL RIG H T5 D IST REVISIONS AG 53 RESERVED. ZONE LTR DESCRIPTIO N z

50PIN D-SUB PLUG

Abstract: LR19980 50PIN D-SUB CONNECTORS
Contextual Info: FEATURES AND SPECIFICATIONS Features and Benefits Electrical Voltage: 40V layout .075 x .075" Current: 1.0A • High cycle life from controlled plating and contact surfaces Contact Resistance: 20mΩ max. ■ Suitable for high-density and high-performance

Contextual Info: Si8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21

SKIIP 33 nec 125 t2

Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
Contextual Info: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.

51-26-0031

Abstract: 50PIN D-SUB CONNECTORS
Contextual Info: FEATURES AND SPECIFICATIONS Features and Benefits Electrical Voltage: 40V layout .075 x .075" Current: 1.0A • High cycle life from controlled plating and contact surfaces Contact Resistance: 20mΩ max. ■ Suitable for high-density and high-performance

Contextual Info: Si8413DB Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.048 at VGS = - 4.5 V - 6.5 0.063 at VGS = - 2.5 V - 5.7 Qg (Typ.) 14 • TrenchFET Power MOSFET • MICRO FOOT® Chipscale Packaging Reduces Footprint Area Profile (0.62 mm) and

Contextual Info: Si8424DB Vishay Siliconix N-Channel 1.2-V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.031 at VGS = 4.5 V 12.2 0.033 at VGS = 2.5 V 11.6 0.035 at VGS = 1.8 V 11.2 0.043 at VGS = 1.5 V 10.2 0.077 at VGS = 1.2 V 1.3 VDS (V) 8 Qg (Typ.) 20 nC

Contextual Info: Si8475EDB Vishay Siliconix P-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.032 at VGS = - 4.5 V - 7.7 0.051 at VGS = - 2.5 V - 6.1 VDS (V) - 20 • • • • TrenchFET Power MOSFET Typical ESD Protection 3000 V Gate-Source OVP

Contextual Info: Si8405DB Vishay Siliconix 12 V P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 • TrenchFET Power MOSFET RDS(on) () ID (A) 0.055 at VGS = - 4.5 V - 4.9 0.070 at VGS = - 2.5 V - 4.4 0.090 at VGS = - 1.8 V -4 • Material categorization: