SI4491E Search Results

Contextual Info: SPICE Device Model Si4491EDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: New Product Si4491EDY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID a RDS(on) () Max. 0.0065 at VGS = - 10 V - 29 0.0082 at VGS = - 6 V - 23 0.0112 at VGS = - 4.5 V - 20 - 30 • Extended VGS range (± 25 V) for adaptor switch

dual mosfet 4620

Abstract: si4491 SI4491E
Contextual Info: New Product Si4491EDY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID a RDS(on) () Max. 0.0065 at VGS = - 10 V - 29 0.0082 at VGS = - 6 V - 23 0.0112 at VGS = - 4.5 V - 20 - 30 • Extended VGS range (± 25 V) for adaptor switch

Contextual Info: New Product Si4491EDY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID a RDS(on) () Max. 0.0065 at VGS = - 10 V - 29 0.0082 at VGS = - 6 V - 23 0.0112 at VGS = - 4.5 V - 20 - 30 • Extended VGS range (± 25 V) for adaptor switch

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®