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    SI4491E Search Results

    SI4491E Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4491EDY-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 17.3A SO-8 Original PDF 10
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    SI4491E Price and Stock

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    Vishay Siliconix SI4491EDY-T1-GE3

    MOSFET P-CH 30V 17.3A 8SO
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    DigiKey () SI4491EDY-T1-GE3 Cut Tape 5,128 1
    • 1 $1.33
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    SI4491EDY-T1-GE3 Digi-Reel 5,128 1
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    SI4491EDY-T1-GE3 Reel 5,000 2,500
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    Vishay Intertechnologies SI4491EDY-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 57AJ0443)
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    Avnet Americas () SI4491EDY-T1-GE3 Ammo Pack 1
    • 1 $1.17
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    SI4491EDY-T1-GE3 Reel 32 Weeks 2,500
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    Mouser Electronics SI4491EDY-T1-GE3 6,434
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    Verical () SI4491EDY-T1-GE3 2,500 2,500
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    SI4491EDY-T1-GE3 990 136
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    Newark SI4491EDY-T1-GE3 Reel 2,500
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    Bristol Electronics SI4491EDY-T1-GE3 71,689
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    TTI SI4491EDY-T1-GE3 Reel 2,500 2,500
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    Chip Stock SI4491EDY-T1-GE3 67,200
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    EBV Elektronik SI4491EDY-T1-GE3 33 Weeks 2,500
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    Vishay Intertechnologies SI4491EDY-T1-GE3 (TRENCHFET)

    Mosfet, P-Ch, 30V, 25.8A, Soic Rohs Compliant: Yes |Vishay SI4491EDY-T1-GE3
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    Newark SI4491EDY-T1-GE3 (TRENCHFET) Cut Tape 990 1
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    Vishay Huntington SI4491EDY-T1-GE3

    MOSFET P-CH 30V 17.3A 8-SO / Trans MOSFET P-CH 30V 17.3A 8-Pin SO T/R
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    Win Source Electronics SI4491EDY-T1-GE3 54,700
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    SI4491E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si4491EDY www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		Si4491EDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si4491EDY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID a RDS(on) () Max. 0.0065 at VGS = - 10 V - 29 0.0082 at VGS = - 6 V - 23 0.0112 at VGS = - 4.5 V - 20 - 30 • Extended VGS range (± 25 V) for adaptor switch


    Original     		Si4491EDY Si4491EDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    dual mosfet 4620

    Abstract: si4491 SI4491E
    Contextual Info: New Product Si4491EDY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID a RDS(on) () Max. 0.0065 at VGS = - 10 V - 29 0.0082 at VGS = - 6 V - 23 0.0112 at VGS = - 4.5 V - 20 - 30 • Extended VGS range (± 25 V) for adaptor switch


    Original     		Si4491EDY Si4491EDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 dual mosfet 4620 si4491 SI4491E PDF

    Contextual Info: New Product Si4491EDY Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID a RDS(on) () Max. 0.0065 at VGS = - 10 V - 29 0.0082 at VGS = - 6 V - 23 0.0112 at VGS = - 4.5 V - 20 - 30 • Extended VGS range (± 25 V) for adaptor switch


    Original     		Si4491EDY 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF