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    SI4564DY Search Results

    SI4564DY Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4564DY-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 40V 10A 8SOIC Original PDF 12
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    Vishay Siliconix SI4564DY-T1-GE3

    MOSFET N/P-CH 40V 10A/9.2A 8SOIC
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    DigiKey () SI4564DY-T1-GE3 Cut Tape 7,258 1
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    SI4564DY-T1-GE3 Digi-Reel 7,258 1
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    SI4564DY-T1-GE3 Reel 5,000 2,500
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    Vishay Intertechnologies SI4564DY-T1-GE3

    N- AND P-CHANNEL 40-V (D-S) MOSFET - Tape and Reel (Alt: SI4564DY-T1-GE3)
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    Avnet Americas SI4564DY-T1-GE3 Reel 25,000 32 Weeks 2,500
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    Verical SI4564DY-T1-GE3 5,000 2,500
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    SI4564DY-T1-GE3 Cut Tape 14,207 1
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    Vishay Huntington SI4564DY-T1-E3

    CMOS 40V 10A 17, 5mOhm SO-8 RoHSconf
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    Win Source Electronics SI4564DY-T1-E3 22,000
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    Vishay Huntington SI4564DY-T1-GE3

    Trans MOSFET N/P-CH 40V 10A/9.2A 8-Pin SOIC N T/R / MOSFET N/P-CH 40V 10A 8SOIC
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    Win Source Electronics SI4564DY-T1-GE3 21,500
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    SI4564DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN609

    Abstract: Si4564DY 917103 si4564
    Contextual Info: Si4564DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		Si4564DY AN609, 07-Apr-10 AN609 917103 si4564 PDF

    Si4564DY

    Abstract: si4564 si4564dy-t1-ge3
    Contextual Info: Si4564DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0175 at VGS = 10 V 10 0.020 at VGS = 4.5 V 9.2 0.021 at VGS = - 10 V - 9.2 0.028 at VGS = - 4.5 V - 7.4


    Original     		Si4564DY 2002/95/EC Si4564DY-T1-GE3 18-Jul-08 si4564 PDF

    Contextual Info: Si4564DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0175 at VGS = 10 V 10 0.020 at VGS = 4.5 V 9.2 0.021 at VGS = - 10 V - 9.2 0.028 at VGS = - 4.5 V - 7.4


    Original     		Si4564DY 2002/95/EC Si4564DY-T1-GE3 18-Jul-08 PDF

    Si4564DY

    Abstract: si4564
    Contextual Info: SPICE Device Model Si4564DY Vishay Siliconix N-Channel and P-Channel 40 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel and p-channel vertical DMOS. The subcircuit model is extracted and optimized


    Original     		Si4564DY 18-Jul-08 si4564 PDF

    Contextual Info: Si4564DY Vishay Siliconix N- and P-Channel 40 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 40 P-Channel - 40 ID (A)a Qg (Typ.) RDS(on) (Ω) 0.0175 at VGS = 10 V 10 0.020 at VGS = 4.5 V 9.2 0.021 at VGS = - 10 V - 9.2 0.028 at VGS = - 4.5 V - 7.4


    Original     		Si4564DY 2002/95/EC Si4564DY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		Mediu33-4-9337-2727 VMN-SG2127-1210 si7121 Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 PDF