SI2399 Search Results

Contextual Info: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model Si2399DS www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Si2399

Abstract: mar 835 mosfet SI2399DS
Contextual Info: SPICE Device Model Si2399DS Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

mar 835 mosfet

Abstract: sot-23 MARKING CODE 41B Si2399 Si2399DS
Contextual Info: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21

Si2399

Abstract: si23
Contextual Info: Si2399DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21

sot-23 MARKING CODE 41B

Abstract: mar 835 mosfet Si2399 SI2399DS
Contextual Info: Si2399DS Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.034 at VGS = - 10 V - 6e 0.045 at VGS = - 4.5 V - 6e 0.067 at VGS = - 2.5 V - 5.2 VDS (V) - 20 Qg (Typ.) 10 nC • Halogen-free According to IEC 61249-2-21

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®