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    SI2300DS Datasheets (2)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI2300DS-T1-BE3
    		Vishay Siliconix N-CHANNEL 30-V (D-S) MOSFET Original PDF 122.8KB 7
    SI2300DS-T1-GE3
    		Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 3.6A SOT-23 Original PDF 7
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    Vishay Intertechnologies SI2300DS-T1-GE3

    Trans MOSFET N-CH 30V 3.6A 3-Pin SOT-23 T/R
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    Verical () SI2300DS-T1-GE3 24,000 3,000
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    SI2300DS-T1-GE3 3,569 229
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    SI2300DS-T1-GE3 Ammo Pack 1
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    Mouser Electronics SI2300DS-T1-GE3 43,654
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    Arrow Electronics SI2300DS-T1-GE3 24,000 52 Weeks 3,000
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    Newark () SI2300DS-T1-GE3 Cut Tape 6,466 1
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    SI2300DS-T1-GE3 Tape & Reel 6,466 10
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    Bristol Electronics SI2300DS-T1-GE3 198 1
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    Quest Components () SI2300DS-T1-GE3 31,109
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    SI2300DS-T1-GE3 158
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    TME SI2300DS-T1-GE3 3,569 1
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    Avnet Asia SI2300DS-T1-GE3 54 Weeks 3,000
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    EBV Elektronik SI2300DS-T1-GE3 53 Weeks 3,000
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    Vishay Intertechnologies SI2300DS-T1-BE3

    Trans MOSFET N-CH 30V 3.1A 3-Pin SOT-23 T/R
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    Verical SI2300DS-T1-BE3 6,000 3,000
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    Avnet Americas SI2300DS-T1-BE3 Tape & Reel 6,000 52 Weeks 3,000
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    Mouser Electronics SI2300DS-T1-BE3 129,456
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    Arrow Electronics SI2300DS-T1-BE3 6,000 52 Weeks 3,000
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    Newark () SI2300DS-T1-BE3 Bulk 2,690 1
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    SI2300DS-T1-BE3 Cut Tape 2,674 1
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    TTI SI2300DS-T1-BE3 Reel 9,000 3,000
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    Vishay Siliconix SI2300DS-T1-GE3

    MOSFET N-CH 30V 3.6A SOT-23
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    RS SI2300DS-T1-GE3 Bulk 3,000
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    Vishay Intertechnologies SI2300DST1GE3

    N-Channel 30 V (D-S) MOSFET Small Signal Field-Effect Transistor, 3.6A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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    ComSIT USA SI2300DST1GE3 2,000
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    Vishay Huntington SI2300DS

    N-Channel 30-V (D-S) MOSFET
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    Win Source Electronics SI2300DS 66,870
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    SI2300DS Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Si2300DS

    Contextual Info: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si2300ds2002/95/eco-236ot-23+2si2300ds-t1-ge318-jul-08 PDF

    Si2300DS

    Abstract: SI2300 Si2300DS-T1-GE3 P2 MARKING CODE s100111rev
    Contextual Info: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si2300ds2002/95/eco-236ot-23+5si2300ds-t1-ge318-jul-08si2300p2 marking codes100111rev PDF

    si2300

    Abstract: Si2300DS S10-0258
    Contextual Info: SPICE Device Model Si2300DS Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		si2300ds18-jul-08si2300s10-0258 PDF

    Contextual Info: SPICE Device Model Si2300DS www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		si2300ds2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    si2300

    Abstract: Si2300DS A 0412 MOSFET AN609
    Contextual Info: Si2300DS_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		si2300dsan60915-jan-10si2300+1a 0412 mosfet PDF

    Contextual Info: New Product Si2300DS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.068 at VGS = 4.5 V 3.6a 0.085 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		si2300ds2002/95/eco-236ot-23+3si2300ds-t1-ge32011/65/eujs709a PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original     		mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF