SIR876 Search Results

SIR876

Contextual Info: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

Contextual Info: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21

AN609

Abstract: SiR876DP 2038
Contextual Info: SiR876DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

SIR876DP

Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm

Contextual Info: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: SPICE Device Model SiR876ADP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SIR876DP

Abstract: 1083
Contextual Info: SPICE Device Model SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

SIR876

Contextual Info: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm

Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm

SiR876ADP

Abstract: SIR876ADP-T1-GE3
Contextual Info: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm

Contextual Info: New Product SiR876ADP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Max. ID (A)a 0.0108 at VGS = 10 V 40 100 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 Qg (Typ.) 16.3 nC • Halogen-free According to IEC 61249-2-21

so8 footprint

Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit

Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit

si7121

Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®

N-Channel MOSFETs

Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in