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    SI7252DP Search Results

    SI7252DP Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI7252DP-T1-GE3
    		Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 100V 36.7A 8SOIC Original PDF 9
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    Vishay Siliconix SI7252DP-T1-GE3

    MOSFET 2N-CH 100V 36.7A PPAK SO8
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    DigiKey () SI7252DP-T1-GE3 Digi-Reel 26,613 1
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    SI7252DP-T1-GE3 Cut Tape 26,613 1
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    SI7252DP-T1-GE3 Reel 26,200 3,000
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    IBS Electronics SI7252DP-T1-GE3 3,000 3,000
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    Vishay Intertechnologies SI7252DP-T1-GE3

    - Tape and Reel (Alt: SI7252DP-T1-GE3)
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    Avnet Americas SI7252DP-T1-GE3 Reel 3,000 12 Weeks 3,000
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    Mouser Electronics SI7252DP-T1-GE3 44,276
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    Verical SI7252DP-T1-GE3 3,000 3,000
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    SI7252DP-T1-GE3 Reel 1
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    Vishay Huntington SI7252DP-T1-GE3

    MOSFET 2N-CH 100V 36.7A PPAK 8SO
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    Win Source Electronics SI7252DP-T1-GE3 8,800
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    SI7252DP Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si7252DP www.vishay.com Vishay Siliconix Dual N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		Si7252DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    SI7252DP

    Abstract: si7252 185NC
    Contextual Info: New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.017 at VGS = 10 V 36.7 0.018 at VGS = 7.5 V 35.7 0.020 at VGS = 6 V 33.9 a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si7252DP Si7252DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si7252 185NC PDF

    Contextual Info: New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.017 at VGS = 10 V 36.7 0.018 at VGS = 7.5 V 35.7 0.020 at VGS = 6 V 33.9 a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si7252DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Contextual Info: New Product Si7252DP Vishay Siliconix Dual N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) () Max. ID (A) 0.017 at VGS = 10 V 36.7 0.018 at VGS = 7.5 V 35.7 0.020 at VGS = 6 V 33.9 a • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original     		Si7252DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		SC-70 SC-75 Si7252DP VMN-PT0261-1209 so8 footprint SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419 PDF

    Contextual Info: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs Key Benefits • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original     		SC-75 SiB456DK Si7252DP SiS990DN Si4590DY 1212-8S VMN-PT0261-1402 PDF

    N-Channel MOSFETs

    Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


    Original     		SC-70 SC-75 1212-8S VMN-MS6926-1406 N-Channel MOSFETs PDF