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    SI419 Search Results

    SI419 Datasheets (5)

    Vishay Siliconix
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI4190ADY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 18.4A 8SO Original PDF 10
    SI4190BDY-T1-GE3
    Vishay Siliconix N-CHANNEL 100 V (D-S) MOSFET SO- Original PDF 190.73KB 7
    SI4190DY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 20A 8-SOIC Original PDF 10
    SI4196DY-T1-E3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC Original PDF 7
    SI4196DY-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC Original PDF 7
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    SI419 Price and Stock

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    Vishay Intertechnologies SI4190ADY-T1-GE3

    Power MOSFET, N Channel, 100 V, 18.4 A, 0.0073 ohm, SOIC, Surface Mount - Tape and Reel (Alt: SI4190ADY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4190ADY-T1-GE3 Tape & Reel 52 Weeks 2,500
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    • 10000 $0.73
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    Newark () SI4190ADY-T1-GE3 Tape & Reel 100
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    • 100 $1.13
    • 1000 $1.06
    • 10000 $1.01
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    SI4190ADY-T1-GE3 Cut Tape 1
    • 1 $1.18
    • 10 $1.18
    • 100 $1.13
    • 1000 $1.06
    • 10000 $1.01
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    SI4190ADY-T1-GE3 Tape & Reel 2,500
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    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.13
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    SI4190ADY-T1-GE3 Cut Tape 2,500
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    • 10000 $1.13
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    SI4190ADY-T1-GE3 Tape & Reel 2,500
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    • 10000 $0.82
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    TTI SI4190ADY-T1-GE3 Reel 2,500
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    • 10000 $0.89
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    Bristol Electronics SI4190ADY-T1-GE3 588
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    TME SI4190ADY-T1-GE3 2,500
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    Avnet Asia SI4190ADY-T1-GE3 54 Weeks 2,500
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    EBV Elektronik SI4190ADY-T1-GE3 53 Weeks 2,500
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    Vishay Intertechnologies SI4190BDY-T1-GE3

    N-CHANNEL 100-V (D-S) MOSFET - Tape and Reel (Alt: SI4190BDY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4190BDY-T1-GE3 Tape & Reel 52 Weeks 5,000
    • 1 -
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    • 10000 $0.94
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    Newark () SI4190BDY-T1-GE3 Cut Tape 1
    • 1 $3.47
    • 10 $3.47
    • 100 $1.76
    • 1000 $1.44
    • 10000 $1.36
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    SI4190BDY-T1-GE3 Tape & Reel 100
    • 1 -
    • 10 -
    • 100 $1.76
    • 1000 $1.44
    • 10000 $1.36
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    Avnet Asia SI4190BDY-T1-GE3 54 Weeks 5,000
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    EBV Elektronik SI4190BDY-T1-GE3 53 Weeks 2,500
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    Caplugs SI419Q1 (NULL)

    PLASTIC BUTTON PLUG WITH FLUSH TYPE HEADS, HOLE SIZE 2,50",03-,08,BOX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI419Q1 (NULL) Bulk 1,000
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    • 10000 $0.54
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    Caplugs QSI419Q1 (NULL)

    PLASTIC BUTTON PLUG WITH FLUSH TYPE HEADS, HOLE SIZE 2,50",03-,08,BOX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS QSI419Q1 (NULL) Bulk 200
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    • 1000 $1.99
    • 10000 $1.99
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    Caplugs SI419-2Q1 (NULL)

    PLASTIC BUTTON PLUG WITH RECESSED TYPE HEADS, HOLE SIZE 2,50",02-,10",BOX
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS SI419-2Q1 (NULL) Bulk 1,250
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.38
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    SI419 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    63826

    Contextual Info: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    si4190adysi4190ady-t1-ge32011/65/eu2002/95/ec+212-mar-1263826 PDF

    63826

    Abstract: Si4190ADY
    Contextual Info: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    si4190adysi4190ady-t1-ge32011/65/eu2002/95/ec+212-mar-1263826 PDF

    Si4190ADY

    Abstract: si41
    Contextual Info: SPICE Device Model Si4190ADY www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached spice model describes the typical electrical characteristics of the N-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    si4190ady2011/65/eu2002/95/ec12-mar-12+1si41 PDF

    Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4190dy2002/95/ecsi4190dy-t1-ge32011/65/eu+2js709a02-oct-12 PDF

    AN609

    Abstract: si419
    Contextual Info: Si4196DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    si4196dyan60911-nov-09si419 PDF

    Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4190dy2002/95/ecsi4190dy-t1-ge318-jul-08 PDF

    Contextual Info: New Product Si4190ADY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. ID (A)a 0.0088 at VGS = 10 V 18.4 100 0.0094 at VGS = 7.5 V 17.8 0.0120 at VGS = 4.5 V 15.8 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested


    Original
    si4190adysi4190ady-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    2128S

    Abstract: si41
    Contextual Info: SPICE Device Model Si4196DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    si4196dy18-jul-082128ssi41 PDF

    si41

    Abstract: si4196
    Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original
    si4196dy2002/95/ecsi4196dy-t1-e318-jul-08+2si41si4196 PDF

    Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original
    si4196dy2002/95/ecsi4196dy-t1-e32011/65/eu+2js709a02-oct-12 PDF

    DIODE 2141

    Abstract: si4190
    Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4190dy2002/95/ecsi4190dy-t1-ge318-jul-08+2diode 2141si4190 PDF

    Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4190dy2002/95/ecsi4190dy-t1-ge318-jul-08 PDF

    Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4190dy2002/95/ecsi4190dy-t1-ge311-mar-11 PDF

    Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original
    si4196dy2002/95/ecsi4196dy-t1-e311-mar-11 PDF

    SI4190DY

    Contextual Info: New Product Si4190DY Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () 100 ID (A)a 0.0088 at VGS = 10 V 20 0.012 at VGS = 4.5 V 17 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si4190dy2002/95/ecsi4190dy-t1-ge32011/65/eu+112-mar-12 PDF

    so8 footprint

    Abstract: SIR876 si7454 si409 SiR872ADP sir878 SiS890DN si7252 si419
    Contextual Info: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings Down to VGS = 4.5 V 80 V to 150 V High-Performance 80 V to 150 V Power MOSFETs KEY BENEFITS • New next-generation technology provides very low on-resistance and ultra-low figure of merit


    Original
    sc-70sc-75si7252dpvmn-pt0261-1209+9so8 footprintsir876si7454si409sir872adpsir878sis890dnsi7252si419 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF

    N-Channel MOSFETs

    Contextual Info: Vishay Intertechnology, Inc. LOW AND MEDIUM VOLTAGE N-CHANNEL MOSFET s TrenchFET GEN IV High-Performance MOSFETs from 30 V to 60 V ThunderFET® High-Performance MOSFETs from 80 V to 200 V PowerPAK® SC-70 PowerPAK SC-75 High-Performance MOSFETs from 60 V to 150 V in


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    sc-70sc-751212-8svmn-ms6926-1406+1n-channel mosfets PDF