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SI4196 Datasheets (2)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4196DY-T1-E3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC	Original	PDF		7
SI4196DY-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC	Original	PDF		7

SI4196 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AN609 Abstract: si419 Contextual Info: Si4196DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si4196dy an609 11-nov-09 si419	PDF
2128S Abstract: si41 Contextual Info: SPICE Device Model Si4196DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si4196dy 18-jul-08 2128s si41	PDF
si41 Abstract: si4196 Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested	Original	si4196dy 2002/95/ec si4196dy-t1-e3 18-jul-08 +2si41 si4196	PDF
Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested	Original	si4196dy 2002/95/ec si4196dy-t1-e3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested	Original	si4196dy 2002/95/ec si4196dy-t1-e3 11-mar-11	PDF
Contextual Info: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested	Original	si4196dy 2002/95/ec si4196dy-t1-e3 2011/65/eu +112-mar-12	PDF