SI7454 Search Results

Si7454DDP

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

SI7454CDP-T1-GE3

Abstract: Si7454CDP
Contextual Info: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0305 at VGS = 10 V 22 VDS (V) 100 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm

Si7454DP

Abstract: Si7454DP-T1-E3 Si7454DP-T1-GE3
Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

Contextual Info: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21

Contextual Info: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21

AN609

Abstract: Si7454CDP
Contextual Info: Si7454CDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.034 @ VGS = 10 V 7.8 0.040 @ VGS = 6.0 V 7.2 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile

Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

Si7454DP

Abstract: Si7454DP-T1-E3 Si7454DP-T1-GE3
Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

1.0964

Contextual Info: Si7454DDP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.034 @ VGS = 10 V 7.8 0.040 @ VGS = 6.0 V 7.2 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile

Si7454DP

Abstract: Si7454DP-T1
Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.034 @ VGS = 10 V 7.8 0.040 @ VGS = 6.0 V 7.2 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile

Si7454CDP

Abstract: Si7454CDP spice
Contextual Info: SPICE Device Model Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C

si7454

Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

Si7454DP

Abstract: Si7454DP-T1 Si7454DP-T1-E3
Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 rDS(on) (Ω) ID (A) 0.034 @ VGS = 10 V 7.8 0.040 @ VGS = 6.0 V 7.2 • TrenchFET Power MOSFETS • New Low Thermal Resistance PowerPAK® Package with Low 1.07-mm Profile

Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.034 at VGS = 10 V 7.8 0.040 at VGS = 6.0 V 7.2 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs • New Low Thermal Resistance PowerPAK®

Contextual Info: SPICE Device Model Si7454DDP www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C

Contextual Info: New Product Si7454CDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () ID (A) 0.0305 at VGS = 10 V 22 0.033 at VGS = 7.5 V 21 0.043 at VGS = 4.5 V 18.5 Qg (Typ.) 9.5 nC • Halogen-free According to IEC 61249-2-21

si7454

Abstract: Si7454DP S6014
Contextual Info: SPICE Device Model Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si7454DP

Contextual Info: SPICE Device Model Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

9015 transistor specification sheet

Abstract: AN609 Si7454DP 1564465
Contextual Info: Si7454DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Contextual Info: New Product Si7454DDP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 a RDS(on) () Max. ID (A) 0.033 at VGS = 10 V 21 0.036 at VGS = 7.5 V 20 0.047 at VGS = 4.5 V 17.7 Qg (Typ.) 6.1 nC APPLICATIONS • • • • PowerPAK SO-8

Si7454DP

Abstract: Si7454DP-T1
Contextual Info: Si7454DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES D TrenchFETr Power MOSFETS D New Low Thermal Resistance PowerPAKr Package with Low 1.07-mm Profile D PWM Optimized for Fast Switching D 100% Rg Tested PRODUCT SUMMARY VDS (V) 100 rDS(on) (W) ID (A)