SIR876DP Search Results

SIR876DP Datasheets (1)

Filter by Manufacturer

Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SIR876DP-T1-GE3		Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 40A 8-SOIC	Original	PDF		9

SIR876DP Price and Stock

Filter by Manufacturer

Vishay Intertechnologies


Vishay Intertechnologies SIR876DPT1GE3 N-CHANNEL 100 V (D-S) MOSFET Power Field-Effect Transistor, 40A I(D), 100V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SIR876DPT1GE3		13			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIR876DP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
AN609 Abstract: SiR876DP 2038 Contextual Info: SiR876DP_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	sir876dp an609 12-mar-10 2038	PDF
SIR876DP Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm	Original	sir876dp 2002/95/ec sir876dp-t1-ge3 18-jul-08	PDF
SIR876DP Abstract: 1083 Contextual Info: SPICE Device Model SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	sir876dp 18-jul-08 1083	PDF
Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm	Original	sir876dp 2002/95/ec sir876dp-t1-ge3 18-jul-08	PDF
Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm	Original	sir876dp 2002/95/ec sir876dp-t1-ge3 11-mar-11	PDF
Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm	Original	sir876dp 2002/95/ec sir876dp-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product SiR876DP Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0108 at VGS = 10 V 40 0.0114 at VGS = 7.5 V 40 0.0145 at VGS = 4.5 V 40 VDS (V) 100 Qg (Typ.) 16.9 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm	Original	sir876dp 2002/95/ec sir876dp-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF