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SI5504BDC Datasheets (2)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI5504BDC-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8	Original	PDF		16
SI5504BDC-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET N/P-CH 30V 4A 1206-8	Original	PDF		16

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Vishay Siliconix SI5504BDC-T1-E3 SI5504BDC-T1-E3 N/P-CHANNEL MOSFET TRANSISTOR, 3.7 A, 4 A, 30 V, 8-PIN 1206
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI5504BDC-T1-E3	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.80	Get Quote
Vishay Siliconix SI5504BDC-T1-GE3 SI5504BDC-T1-GE3 DUAL N/P-CHANNEL MOSFET TRANSISTOR, 30 V, 8-PIN 1206 CHIPFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI5504BDC-T1-GE3	Bulk			300	1 - 10 - 100 - 1000 $1.20 10000 $1.04	Get Quote
Vishay Intertechnologies SI5504BDC-T1-E3 4A, 30V, 0.065OHM, 2 CHANNEL,N AND P-CHANNEL, SI, POWER, MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	SI5504BDC-T1-E3		52			1 $2.50 10 $2.50 100 $1.25 1000 $1.25 10000 $1.25	Buy Now
Vishay Intertechnologies SI5504BDCT1GE3 Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	SI5504BDCT1GE3		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI5504BDC-T1-GE3 IN STOCK SHIP TODAY
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Component Electronics, Inc	SI5504BDC-T1-GE3		25			1 $0.96 10 $0.96 100 $0.72 1000 $0.63 10000 $0.63	Buy Now

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SI5504BDC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si5504BDC www.vishay.com Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel -30 ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = -10 V -3.7 0.235 at VGS = -4.5 V -2.8 1206-8 8 1.	Original	si5504bdc 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
AN609 Abstract: Si5504BDC Contextual Info: Si5504BDC_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si5504bdc an609 03-may-07	PDF
Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)	Original	si5504bdc 2002/95/ec 18-jul-08	PDF
si5504 Abstract: Si5504BDC-T1-GE3 Si5504BDC Si5504BDC-T1-E3 TB-3050 SI5504BDC-T1 Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)	Original	si5504bdc 2002/95/ec 18-jul-08 si5504 +4si5504bdc-t1-ge3 si5504bdc-t1-e3 tb-3050 si5504bdc-t1	PDF
Si5504BDC Contextual Info: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si5504bdc 18-jul-08	PDF
Contextual Info: Si5504BDC Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8 Qg (Typ)	Original	si5504bdc 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Si5504BDC Contextual Info: SPICE Device Model Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET CHARACTERISTICS • N- and P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si5504bdc s-71047rev 21-may-07	PDF
Si5504BDC Abstract: Si5504BDC-T1-E3 si5504 transistor mosfet n-ch drain current Si5504DC Si5504DC-T1 N- and P-Channel 30-V D-S MOSFET Contextual Info: Specification Comparison Vishay Siliconix Si5504BDC vs. Si5504DC Description: Package: Pin Out: N- and P-Channel 30-V D-S MOSFET 1206-8 ChipFET Identical Part Number Replacements Si5504BDC-T1-E3 Replaces Si5504DC-T1-E3 Si5504BDC-T1-E3 Replaces Si5504DC-T1	Original	si5504bdc si5504dc si5504bdc-t1-e3 si5504dc-t1-e3 +5si5504dc-t1 30-aug-07 si5504 transistor mosfet n-ch drain current n- and p-channel 30-v d-s mosfet	PDF
Si5504BDC Abstract: Si5504BDC-T1-E3 Contextual Info: New Product Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8	Original	si5504bdc si5504bdc-t1-e3 08-apr-05	PDF
si5504 Abstract: Si5504BDC Si5504BDC-T1-E3 Contextual Info: New Product Si5504BDC Vishay Siliconix N- and P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 30 - 30 rDS(on) (Ω) ID (A) 0.065 at VGS = 10 V 4a 0.100 at VGS = 4.5 V 4a 0.140 at VGS = - 10 V - 3.7 0.235 at VGS = - 4.5 V - 2.8	Original	si5504bdc si5504bdc-t1-e3 18-jul-08 si5504	PDF
smd transistor m6 Abstract: N1 smd transistor SMD Transistor DN smd transistor m11 ATA6870 Active Cell Balancing smd transistor m7 smd transistor n2 cell balancing M6 smd transistor Contextual Info: Active Cell Balancing Methods for Li-Ion Battery Management ICs using the ATA6870 ATA6870 1. Scope This application note describes methods of active battery cell balancing with the ATA6870. Application Note 2. Cell Balancing In a multi-cell battery pack, no two cells are identical. There are always slight differences in the state of charge, capacity, impedance and temperature characteristics —	Original	ata6870 9184b smd transistor m6 n1 smd transistor +7smd transistor dn smd transistor m11 active cell balancing smd transistor m7 smd transistor n2 cell balancing m6 smd transistor	PDF
1N4007 MINI MELF Contextual Info: LCD Television Table of Contents BACKLIGHT INVERTER, Lighting Ignitor. 3 BACKLIGHT INVERTER, MOSFET Driver. 4	Original	250ns do-220aa v-540v v-440v +4do-204al do-41 do-204ac 1n4007 mini melf	PDF
Siliconix mosfet guide Abstract: list of P channel power mosfet Siliconix Selection Guide Si147DH Si1471DH 1206-8 chipfet layout P-channel power mosfet SO-8 power selector guide SiA513DJ Si1065X Contextual Info: N & P-Channel Power MOSFETs Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no	Original	sc-75 sc-75a sc-89 siliconix mosfet guide +9list of p channel power mosfet siliconix selection guide si147dh si1471dh 1206-8 chipfet layout p-channel power mosfet so-8 power selector guide sia513dj si1065x	PDF
Power MOSFET Abstract: mosfet switch Schottky Diode 40V 2A schottky diode 30v MOSFET Contextual Info: POL Power Table of Contents BOOTSTRAP, Diodes. 3 CONTROLLERS, Current Sense Resistors. 4	Original	si4642dy sie726df 1-1500uf 47-680uf +5power mosfet mosfet switch schottky diode 40v 2a schottky diode 30v mosfet	PDF

Diode SOT-23 marking 15d Abstract: SI4210 si4812b SI-4102 SI7149DP SiM400 si4932 si7135 SiB914 SI4477 Contextual Info: V ISHAY INTERTECHN O L O G Y , INC . M O S F ET s LITTLE F O O T LITTLE F O O T ® P l u s Tr e n c h F E T ® Sk yFE T® Tu r b o F E T ® ChipFE T® P o w e r PA K ® P o l a r PA K ® P o w e r PA I R w w w. v i s h a y. c o m Selector Guide low-voltage Power MOSFETs	Original	diod92 vmn-sg2127-0911 diode sot-23 marking 15d si4210 +8si4812b si-4102 si7149dp sim400 si4932 si7135 sib914 si4477	PDF