SI717 Search Results
SI717 Datasheets (5)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI7170DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 40A PPAK 8SOIC | Original | 9 | |||
| SI7172ADP-T1-RE3 | Vishay Siliconix | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CHAN 200V POWERPAK SO-8 | Original | 184.78KB | |||
| SI7172DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 200V 25A PPAK 8SOIC | Original | 9 | |||
| SI7174DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 75V 60A PPAK 8SOIC | Original | 9 | |||
| SI7178DP-T1-GE3 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 60A PPAK 8SOIC | Original | 9 |
SI717 Price and Stock
Vishay Intertechnologies SI7172ADP-T1-RE3MOSFET N-CH 200V PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7172ADP-T1-RE3 | Digi-Reel | 11,397 | 1 |
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SI7172ADP-T1-RE3 | Tape & Reel | 29 Weeks | 6,000 |
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SI7172ADP-T1-RE3 | 15,694 |
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SI7172ADP-T1-RE3 | 6,000 | 6,000 |
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SI7172ADP-T1-RE3 | 6,000 | 29 Weeks | 6,000 |
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SI7172ADP-T1-RE3 | Cut Tape | 11,580 | 1 |
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SI7172ADP-T1-RE3 | Reel | 6,000 |
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SI7172ADP-T1-RE3 | 31 Weeks | 6,000 |
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SI7172ADP-T1-RE3 | 30 Weeks | 3,000 |
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Vishay Intertechnologies SI7172DP-T1-GE3MOSFET N-CH 200V 25A PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7172DP-T1-GE3 | Cut Tape | 4,415 | 1 |
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SI7172DP-T1-GE3 | Tape & Reel | 8 Weeks | 3,000 |
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SI7172DP-T1-GE3 | 18,482 |
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SI7172DP-T1-GE3 | 974 | 29 |
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SI7172DP-T1-GE3 | Tape & Reel | 3,000 |
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SI7172DP-T1-GE3 | Reel | 21,000 | 3,000 |
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SI7172DP-T1-GE3 | 62 Weeks | 3,000 |
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SI7172DP-T1-GE3 | Cut Tape | 974 | 0 Weeks, 1 Days | 1 |
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SI7172DP-T1-GE3 | 61 Weeks | 3,000 |
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SI7172DP-T1-GE3 | 15,000 | 1 |
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Vishay Intertechnologies SI7174DP-T1-GE3MOSFET N-CH 75V 60A PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7174DP-T1-GE3 | Digi-Reel | 26 |
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SI7174DP-T1-GE3 | Tape & Reel | 3,000 |
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Buy Now | ||||||
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SI7174DP-T1-GE3 | Tape & Reel | 3,000 |
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SI7174DP-T1-GE3 | Reel | 3,000 |
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SI7174DP-T1-GE3 | 48 |
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SI7174DP-T1-GE3 | 3,000 |
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Get Quote | |||||||
Vishay Intertechnologies SI7178DP-T1-GE3MOSFET N-CH 100V 60A PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7178DP-T1-GE3 | Tape & Reel |
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Buy Now | |||||||
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SI7178DP-T1-GE3 | Tape & Reel | 3,000 |
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Buy Now | ||||||
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SI7178DP-T1-GE3 | Cut Tape | 3,000 |
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Buy Now | ||||||
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SI7178DP-T1-GE3 | Reel | 3,000 |
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SI7178DP-T1-GE3 | 68 |
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SI7178DP-T1-GE3 | 3,000 |
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Get Quote | |||||||
Vishay Intertechnologies SI7170DP-T1-GE3MOSFET N-CH 30V 40A PPAK SO-8 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI7170DP-T1-GE3 | Tape & Reel |
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Buy Now | |||||||
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SI7170DP-T1-GE3 | 2,924 | 2 |
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SI7170DP-T1-GE3 | 2,339 |
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SI717 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package |
Original |
Si7172DP Si7172DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
AN609
Abstract: Si7172DP
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Original |
Si7172DP AN609, 09-Jul-08 AN609 | |
AN609
Abstract: Si7170DP
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Original |
Si7170DP AN609, 11-Apr-08 AN609 | |
a2728
Abstract: Si7178DP
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Si7178DP S-81925-Rev. 25-Aug-08 a2728 | |
SI7172DP-T1-GE3
Abstract: Si7172DP
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Si7172DP Si7172DP-T1-GE3 18-Jul-08 | |
so 54 t
Abstract: Si7178DP-T1-GE3 Si7178DP
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Si7178DP Si7178DP-T1-GE3 08-Apr-05 so 54 t | |
Si7172DP
Abstract: Si7172DP-T1-GE3 si7172
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Original |
Si7172DP Si7172DP-T1-GE3 11-Mar-11 si7172 | |
Si7174DP
Abstract: Si7174DP-T1-GE3 S8078 si7174
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Si7174DP Si7174DP-T1-GE3 08-Apr-05 S8078 si7174 | |
Si7178DPContextual Info: SPICE Device Model Si7178DP Vishay Siliconix N-Channel 100-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
Original |
Si7178DP 18-Jul-08 | |
Si7172DPContextual Info: SPICE Device Model Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
Original |
Si7172DP 18-Jul-08 | |
Si7174DPContextual Info: SPICE Device Model Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
Original |
Si7174DP 18-Jul-08 | |
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Contextual Info: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package |
Original |
Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS |
Original |
Si7174DP Si7174DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si7174DP
Abstract: SI7174DP-T1-GE3 SI7174DPT1GE3
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Si7174DP Si7174DP-T1-GE3 18-Jul-08 SI7174DPT1GE3 | |
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Si7174DP
Abstract: Si7174DP-T1-GE3
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Si7174DP Si7174DP-T1-GE3 11-Mar-11 | |
mosfet equivalent
Abstract: Si7178DP
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Si7178DP Si7178DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 mosfet equivalent | |
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Contextual Info: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested |
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Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: Si7170DP Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.0034 at VGS = 10 V 40g 0.0043 at VGS = 4.5 V 40g VDS (V) 30 Qg (Typ.) 29 nC PowerPAK SO-8 APPLICATIONS S 6.15 mm • Notebook PC Core - Low Side • VRM POL |
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Si7170DP 2002/95/EC Si7170DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
Si7178DP
Abstract: AN609
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Original |
Si7178DP AN609 25-Mar-08 | |
SI7174DPContextual Info: SPICE Device Model Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range |
Original |
Si7174DP capacit353 S-81926-Rev. 25-Aug-08 | |
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Contextual Info: Si7172DP www.vishay.com Vishay Siliconix N-Channel 200 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A) g 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 VDS (V) 200 Qg (TYP.) 34 D 5 D 6 • Low thermal resistance PowerPAK package • 100 % Rg and UIS tested |
Original |
Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: SPICE Device Model Si7174DP www.vishay.com Vishay Siliconix N-Channel 75 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C |
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Si7174DP 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product Si7172DP Vishay Siliconix N-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)g RDS(on) (Ω) 200 0.070 at VGS = 10 V 25 0.076 at VGS = 6 V 24 Qg (Typ.) 34 PowerPAK SO-8 • • • • • Halogen-free TrenchFET Power MOSFET Low Thermal Resistance PowerPAK® Package |
Original |
Si7172DP Si7172DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
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Contextual Info: New Product Si7174DP Vishay Siliconix N-Channel 75-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a, g Qg (Typ.) 75 0.007 at VGS = 10 V 60 47.5 nC • • • • Halogen-free TrenchFET Power MOSFET 100 % Rg Tested 100 % UIS Tested RoHS |
Original |
Si7174DP Si7174DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |