si4666
Abstract: No abstract text available
Text: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition
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Si4666DY
2002/95/EC
Si4666DY-T1-GE3
18-Jul-08
si4666
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Untitled
Abstract: No abstract text available
Text: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si4666DY
2002/95/EC
Si4666DY-T1-GE3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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66640
Abstract: si4666 S10-0920
Text: SPICE Device Model Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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PDF
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Si4666DY
18-Jul-08
66640
si4666
S10-0920
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Untitled
Abstract: No abstract text available
Text: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si4666DY
2002/95/EC
Si4666DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si4666DY www.vishay.com Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C
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Original
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PDF
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Si4666DY
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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si4666
Abstract: 4940 si46
Text: Si4666DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,
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Si4666DY
AN609,
07-Jun-10
si4666
4940
si46
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Untitled
Abstract: No abstract text available
Text: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si4666DY
2002/95/EC
Si4666DY-T1-GE3
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition
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Original
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PDF
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Si4666DY
2002/95/EC
Si4666DY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_00 Seiko Instruments Inc., 2013 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage
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S-8367/8368
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Untitled
Abstract: No abstract text available
Text: S-8367/8368 Series www.sii-ic.com STEP-UP 1.2 MHz PWM CONTROL CURRENT LIMIT SWITCHING REGULATOR CONTROLLER Rev.1.1_01 Seiko Instruments Inc., 2013-2014 The S-8367/8368 Series is a CMOS step-up type switching regulator controller which consists of a reference voltage
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S-8367/8368
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Untitled
Abstract: No abstract text available
Text: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating
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VMN-PT0105-1007
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si7121
Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
Text: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®
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Mediu33-4-9337-2727
VMN-SG2127-1210
si7121
Si4914B
SI-4102
SI4599
Si4483A
sir166
irfd120
si7949
si4459a
SIR836
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