SI46 Search Results

69256

Abstract: Si4652DY si4652
Contextual Info: New Product Si4652DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES • TrenchFET Power MOSFET PRODUCT SUMMARY VDS (V) 25 rDS(on) (Ω) ID (A)a 0.0035 at VGS = 10 V 30 0.0042 at VGS = 4.5 V 28 Qg (Typ) • 100 % Rg and UIS Tested RoHS COMPLIANT 35.5 nC

Si4630DY

Abstract: Si4630DY-T1-E3 Si4630DY-T1-GE3
Contextual Info: Si4630DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0027 at VGS = 10 V 36 0.0032 at VGS = 4.5 V 29 Qg (Typ) 49 nC • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

Si4660DY

Abstract: Si4660DY-T1-E3 Si4660DY-T1-GE3
Contextual Info: Si4660DY Vishay Siliconix N-Channel 25-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 25 RDS(on) (Ω) ID (A)a 0.0058 at VGS = 10 V 23.1 0.007at VGS = 4.5 V 21 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4636DY

Abstract: Si4636DY-T1-E3
Contextual Info: New Product Si4636DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0085 at VGS = 10 V 17 0.0105 at VGS = 4.5 V 15.6 Qg (Typ)

Contextual Info: New Product Si4670DY Vishay Siliconix Dual N-Channel 25-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 0.023 at VGS = 10 V 0.028 at VGS = 4.5 V 25 Channel-2 ID (A)a, e Qg (Typ) rDS(on) (Ω)

Si4626ADY

Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT

Si4634DY

Abstract: Si4634DY-T1-E3 Si4634DY-T1-GE3
Contextual Info: Si4634DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0052 at VGS = 10 V 24.5 0.0067 at VGS = 4.5 V 21.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET • 100 % Rg and UIS Tested

Si4662DY

Contextual Info: New Product Si4662DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 18.6 0.014 at VGS = 4.5 V 15.7 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 11 nC RoHS APPLICATIONS

SI4688DY

Contextual Info: New Product Si4688DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.011 at VGS = 10 V 12 0.0145 at VGS = 4.5 V 9.8 • TrenchFET Power MOSFET • 100 % Rg Tested • 100 % UIS Tested RoHS COMPLIANT

Si4628DY

Abstract: si4628
Contextual Info: Si4628DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0030 at VGS = 10 V 38 0.0038 at VGS = 4.5 V 33 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Definition • SkyFET Monolithic TrenchFET® Gen III

Contextual Info: Si4618DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.017 at VGS = 10 V 0.0195 at VGS = 4.5 V 0.010 at VGS = 10 V 0.0115 at VGS = 4.5 V ID (A)a Qg (Typ.) 8.0

si4666

Contextual Info: Si4666DY Vishay Siliconix N-Channel 25 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a 0.010 at VGS = 10 V 16.5 25 0.011 at VGS = 4.5 V 15.8 0.014 at VGS = 2.5 V 14 Qg (Typ.) 10.7 nC • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si4650DY Vishay Siliconix Dual N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) (Ω) 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V 0.018 at VGS = 10 V 0.022 at VGS = 4.5 V ID (A)a, e Qg (Typ.) 8.0

Si4682DY

Abstract: Si4682DY-T1-E3
Contextual Info: Si4682DY Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ) 11 nC • Extremely Low Qgd WFET Technology for Low Switching Losses • TrenchFET® Power MOSFET

TB-17

Abstract: Si4642DY Si4642DY-T1-E3 74430
Contextual Info: New Product Si4642DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • SkyFET Monolithic TrenchFET Power PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.00375 at VGS = 10 V 34 0.0047 at VGS = 4.5 V 30 VDS (V) 30 Qg (Typ) MOSFET and Schottky Diode

si4626a

Abstract: si4626
Contextual Info: New Product Si4626ADY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0033 at VGS = 10 V 30 0.0041 at VGS = 4.5 V 26.3 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET

c 5521 datasheet

Abstract: AN609
Contextual Info: Si4632DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

si4626

Abstract: A3514 Si4626DY
Contextual Info: New Product Si4626DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.0036 at VGS = 10 V 30 0.0048 at VGS = 4.5 V 26.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS COMPLIANT 34 nC

74686

Abstract: mosfet 4423 AN609
Contextual Info: Si4650DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si4621DY-T1-E3

Abstract: si4621 S6078 Schottky Diode 20V 5A
Contextual Info: Si4621DY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V 6.2 0.094 at VGS = - 4.5 V 4.7 Qg (Typ) 4.5 nC • LITTLE FOOT Plus Schottky RoHS APPLICATIONS

Si4636DY

Abstract: Si4636DY-T1-E3 si4636
Contextual Info: New Product Si4636DY Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES • TrenchFET Power MOSFET • 100 % Rg and UIS Tested PRODUCT SUMMARY VDS (V) 30 ID (A)a rDS(on) (Ω) 0.0085 at VGS = 10 V 17 0.0105 at VGS = 4.5 V 15.6 Qg (Typ)

Si4682DY

Abstract: Si4682DY-T1-E3 Si4682DY-T1-GE3
Contextual Info: Si4682DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0094 at VGS = 10 V 16 0.0135 at VGS = 4.5 V 13 Qg (Typ.) 11 nC • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd WFET Technology

SI4682-A10-GM

Contextual Info: Si4682-A10 S IN GLE - C H I P , F M / H D R A D I O R E C E I V E R Features   Worldwide FM band support  76–108 MHz Advanced RDS/RBDS decoder  FM HD Radio support Patent-pending fast-HD station  detection Integrated HD blend  Advanced seek functionality

Si4684-A10

Contextual Info: Si4684-A10 Single-Chip, FM/DAB/DAB+ Radio Receiver Description Features The Si4684 single-chip digital receiver is one member of a family of 100% CMOS digital radio broadcast receiver ICs from Silicon Labs. The Si468x family offers a complete and cost-effective digital radio solution integrating the RF tuner,