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    SI2324 Search Results

    SI2324 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI2324A-TP
    Micro Commercial Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - N-CHANNEL,MOSFETS,SOT-23 PACKAGE Original PDF 877.09KB
    SI2324DS-T1-BE3
    Vishay Siliconix MOSFET N-CH 100V 2.3A SOT-23 Original PDF 248.45KB 10
    SI2324DS-T1-GE3
    Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 2.3A SOT-23 Original PDF 10
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    SI2324 Price and Stock

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    Vishay Intertechnologies SI2324DS-T1-GE3

    - Tape and Reel (Alt: SI2324DS-T1-GE3)
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    Avnet Americas SI2324DS-T1-GE3 Tape & Reel 52 Weeks 3,000
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    Mouser Electronics SI2324DS-T1-GE3
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    Newark () SI2324DS-T1-GE3 Tape & Reel 3,000
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    SI2324DS-T1-GE3 Tape & Reel 100
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    TTI SI2324DS-T1-GE3 Reel 3,000
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    TME SI2324DS-T1-GE3 1
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    Avnet Asia SI2324DS-T1-GE3 54 Weeks 3,000
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    Vishay Intertechnologies SI2324BDS-T1-GE3

    N-Channel 100 V (D-S) MOSFET - Tape and Reel (Alt: SI2324BDS-T1-GE3)
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    Avnet Americas SI2324BDS-T1-GE3 Tape & Reel 52 Weeks 6,000
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    Mouser Electronics SI2324BDS-T1-GE3 564
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    EBV Elektronik SI2324BDS-T1-GE3 53 Weeks 3,000
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    Vishay Intertechnologies SI2324DS-T1-BE3

    Trans MOSFET N-CH 100V 1.6A 3-Pin SOT-23 T/R
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    Bristol Electronics SI2324DS-T1-BE3 5,260 1
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    Quest Components () SI2324DS-T1-BE3 4,208
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    SI2324DS-T1-BE3 4,208
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    Win Source Electronics SI2324A-TP 201,477
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    Vishay Huntington SI2324DS-T1-GE3

    Trans MOSFET N-CH 100V 2.3A 3-Pin SOT-23 T/R / MOSFET N-CH 100V 2.3A SOT-23
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    Win Source Electronics SI2324DS-T1-GE3 19,139
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    SI2324 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: SPICE Device Model Si2324DS www.vishay.com Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original
    si2324ds2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    Contextual Info: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs


    Original
    si2324dso-236ot-23si2324ds-t1-ge3+32002/95/ec2011/65/eujs709a PDF

    SI2324DS

    Abstract: Si2324DS-T1-GE3 si2324
    Contextual Info: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 Qg (Typ.) 2.9 nC • DC/DC Converters • Load Switch • LED Backlighting in LCD TVs


    Original
    si2324dso-236ot-23si2324ds-t1-ge3+42011/65/eu2002/95/ec12-mar-12si2324 PDF

    si2324

    Contextual Info: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si2324ds2002/95/eco-236ot-23+3si2324ds-t1-ge311-mar-11si2324 PDF

    Contextual Info: Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET FEATURES MOSFET PRODUCT SUMMARY RDS(on) () ID (A)a 0.234 at VGS = 10 V 2.3 0.267 at VGS = 6 V 2.1 0.278 at VGS = 4.5 V 1.7 VDS (V) 100 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original
    si2324ds2002/95/eco-236ot-23+2si2324ds-t1-ge32011/65/eu PDF

    si23

    Contextual Info: SPICE Device Model Si2324DS Vishay Siliconix N-Channel 100 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original
    si2324ds11-mar-11si23 PDF

    si2324

    Contextual Info: Si2324DS-GE3_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original
    si2324ds-ge3an6098230u2544m+77717m5656u7143m9848m6315m01-apr-11si2324 PDF

    si7121

    Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836
    Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®


    Original
    mediu33-4-9337-2727vmn-sg2127-1210si7121si4914b+8si-4102si4599si4483asir166irfd120si7949si4459asir836 PDF