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SI4228DY Datasheets (2)

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Vishay Siliconix

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI4228DY-T1-E3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 8A SO8	Original	PDF		7
SI4228DY-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 8A 8-SOIC	Original	PDF		10

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Vishay Intertechnologies


Vishay Intertechnologies SI4228DY-T1-GE3 Transistor: N-MOSFET x2; TrenchFET®; unipolar; 25V; 8A; Idm: 50A; 2W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SI4228DY-T1-GE3				1	1 $1.37 10 $0.79 100 $0.56 1000 $0.45 10000 $0.45	Get Quote
Avnet Americas	SI4228DY-T1-GE3	Tape & Reel		52 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.33	Buy Now
Mouser Electronics	SI4228DY-T1-GE3		42,576			1 $1.47 10 $0.69 100 $0.61 1000 $0.47 10000 $0.36	Buy Now
Arrow Electronics	SI4228DY-T1-GE3	Cut Strips	9	52 Weeks	1	1 $0.34 10 $0.34 100 $0.34 1000 $0.34 10000 $0.34	Buy Now
Newark ()	SI4228DY-T1-GE3	Cut Tape	1,276		1	1 $1.47 10 $0.69 100 $0.61 1000 $0.47 10000 $0.36	Buy Now
	SI4228DY-T1-GE3	Cut Tape			1	1 $1.59 10 $1.59 100 $0.73 1000 $0.59 10000 $0.48	Buy Now
	SI4228DY-T1-GE3	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.35	Buy Now

TTI	SI4228DY-T1-GE3	Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.34	Buy Now
EBV Elektronik	SI4228DY-T1-GE3			53 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote

SI4228DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	si4228dy-t1-e3 2002/95/ec 2011/65/eu js709a +102-oct-12	PDF
Contextual Info: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	si4228dy-t1-e3 2002/95/ec 25trademarks 2011/65/eu +112-mar-12	PDF
Si4228DY Abstract: si4228 Contextual Info: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	si4228dy 2002/95/ec si4228dy-t1-ge3 18-jul-08 +1si4228	PDF
Contextual Info: SPICE Device Model Si4228DY Vishay Siliconix N-Channel 25 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C	Original	si4228dy 18-jul-08	PDF
Contextual Info: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	si4228dy 2002/95/ec si4228dy-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: Si4228DY-T1-E3 Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC	Original	si4228dy-t1-e3 2002/95/ec 25hay 11-mar-11	PDF
si4228 Contextual Info: Si4228DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si4228dy an609 1613u 1920m +67658m 3832u 5799m 6769m 6927m si4228	PDF
Contextual Info: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	si4228dy 2002/95/ec si4228dy-t1-ge3 2011/65/eu +112-mar-12	PDF
Contextual Info: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	si4228dy 2002/95/ec si4228dy-t1-ge3 2011/65/eu +2js709a 02-oct-12	PDF
Contextual Info: New Product Si4228DY Vishay Siliconix Dual N-Channel 25 V D-S MOSFET # FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a, e 0.018 at VGS = 10 V 8 VDS (V) 25 0.020 at VGS = 4.5 V 8 0.024 at VGS = 2.5 V 7.5 • Halogen-free According to IEC 61249-2-21 Definition	Original	si4228dy 2002/95/ec si4228dy-t1-ge3 11-mar-11	PDF
Contextual Info: V i s h ay I n tertec h n olo g y, I n c . Power MOSFETs M O S F ET s Tre nchFET G e n III Key features and Benefits Low conduction and switching losses enable increased efficiency and reduced power consumption • Record-breaking maximum on-resistance at VGS = 4.5 V rating	Original	vmn-pt0105-1007	PDF
si7121 Abstract: Si4914B SI-4102 SI4599 Si4483A sir166 irfd120 si7949 si4459a SIR836 Contextual Info: V ishay I ntertechnology, I nc . MOSFETs - Comprehensive Power MOSFET Technology Range I INNOVAT AND TEC O L OGY Vishay Siliconix N HN Power mosfets O 19 62-2012 Low to High Voltage Power MOSFETs ChipFET P o w e r PA K ® P o l a r PA K ® P o w e r PA I R ®	Original	mediu33-4-9337-2727 vmn-sg2127-1210 si7121 si4914b +8si-4102 si4599 si4483a sir166 irfd120 si7949 si4459a sir836	PDF