BFW44 Search Results

CI 74

Abstract: BFW transistors bfw 10 transistor BFW 100 transistor BFW43 BFW44 G3137
Contextual Info: BFW43 BFW44 SILICON PLANAR PNP HIGH VOLTAG E AM PLIFIERS T he EIFW 43 and BFW 44 are silic o n p la n a r e p ita x ia l PNP tra n sisto rs in Jedec T O - 1 8 B F W 4 3 and Jedec T O -3 9 (BFW 4 4 ) m etal cases. B o th devices are designed fo r use in a m p lifie rs w here high voltage and high gain are necessary.

BFY83

Abstract: BLY48
Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34

BFW44CSM

Contextual Info: BFW44CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

BFW44DCSM

Contextual Info: BFW44DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

Contextual Info: BFW44 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016) 0.53 (0.021)

BFW44

Contextual Info: BFW44 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016) 0.53 (0.021)

bfw44 2n5401

Abstract: MPSD01 bfx98 mpsl01
Contextual Info: High Voltage Transistors TYPE NO. POLA­ R IT Y CA SE M A X IM U M R A T IN G S VcEO Pd Ic Ic.M* ^CER* raW (m A ) (V) H FE fT ^CE(sat) m in m ax Ic (m A ) V ce (V) m ax (V) Ic (m A ) m in (M H z) Cob C re* m ax (M H z) BFW43 BFW44 BFW45 P P N T O -18 TO-39

Contextual Info: BFW44CSM Dimensions in mm inches . 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) Bipolar PNP Device in a Hermetically sealed LCC1 Ceramic Surface Mount Package for High Reliability Applications 0.31 rad. (0.012) 2 0.76 ± 0.15 (0.03 ± 0.006)

bfw44

Abstract: BFW43 BFW transistors BFw 94
Contextual Info: BFW43 BFW44 HIGH VOLTAGE AMPLIFIERS DESCRIPTION The BFW43 and BFW44 are silicon planar epitaxial PNP transistors in Jedec TO-18 BFW43 and Jedec TO-39 (BFW44) metal cases. Both devices are designed for use in amplifiers where high voltage and high gain are necessary. In

bfw44

Abstract: BFW43 BFW transistors
Contextual Info: 3QE D • 7121237 QDBQTTB D ■ Ì Eu SGS-THOMSON ^I TO «S BFW43 BFW44 S G S-THOMSON HIGH VOLTAGE AMPLIFIERS DESCRIPTIO N T h e B F W 43 and B F W 44 a re silicon planar epitaxial P N P transistors in Jedec T O -1 8 B F W 4 3 and Jede c T O -3 9 (B F W 4 4) m etal cases.

Contextual Info: BFW44 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 150V 0.41 (0.016) 0.53 (0.021)

BFW45

Abstract: BFR59 BFS89 BFS90 BFS91 BFT47 BFT48 BFT49 BFT57 BFT58
Contextual Info: High Voltage Transistors TYPE NO. 101 POLA­ RITY CASE MAXIMUM RATINGS VCEO IC Pd ICM* VCER* mA (mW) (V) VCE(sat) HFE min max IC (mA) VCE (V) m ai (V) IC (mA) fr min (MHz) Cob Cre* max (MHz) BFR59 BFS89 BFS90 BFS91 BFT47 N N P P N TO-39 TO-39 TO-39 TO-39

BFW44

Abstract: BFW transistors bfw 10 transistor BFW43
Contextual Info: BFW 43 BFW 44 SILICON PLANAR PNP HIGH V O L T A G E AM PLIFIERS T he BFW 43 and B F W 4 4 are silico n p lanar e p ita x ia l PNP tran sisto rs in Jedec T O -1 8 B F W 4 3 and Jedec T O -3 9 (B F W 4 4 ) m etal cases. B o th devices are designed fo r use in a m p lifie rs w here high voltage and high gain are necessary.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

BFX36

Abstract: 110H BFX81 BFY64 BFY84 BFT53 BFT54 BFT57 BFT58 BFT59
Contextual Info: Ô133107 4ÔE D G0G0451 SEMELABI 33S ISMLB SEMELAB LTD BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code BFTW REQ REQ REQ HE HE HE HR HE HR HR HE HE HR HE HE EEQ REQ REQ HR HR REQ EEQ KEQ CECC HR KEQ EEQ EEQ EEQ EEQ REQ HE HR HK HE

2n5859 equivalent

Abstract: BFW16A bc140 BD115 2N5859 2N6190 2N6191 2N6192 2N6193 BC141
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP

BSV12

Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
Contextual Info: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP

2SC1048

Contextual Info: High Voltage Transistors TYPE NO. CASE POLA­ RITY MAXIMUM RATINGS VCEO Pi Ic Vcer« ICM* mW (mA) (V) Hfi Vce(«*) C* fT c „ . min max . Ic (mA) VCE (V) mas (V) Ic (mA) min (MHz) mas (MHz) 30 10 10 50 25 10 10 10 20 10 1 0.5 0.5 10 1 30 10 10 50 25 110+

2N5859

Abstract: 2N5784 2N5785 2N5786 2N5861 2N6190 2N6191 2N6192 2N6193 BC140
Contextual Info: Small Signal Transistors TO-39 Case Continued T Y PE NO. DESCRIPTION VC BO h :E @ I C @ VC E VCE(SA T) lc (roA) (MHz) <mA) (V) (V) C0 b *TYP NF *off (ns) (dB) *TYP *TYP *TYP *TYP MIN MIN MIN *'C EO *'C E S *ICEV *'CER MIN M AX MIN MAX M AX M AX

2n5861

Abstract: 2n5859 equivalent 2N5859 BD115 BF178 2N5784 2N5785 2N5786 2N6190 2N6191
Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO @ (mA) VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC fT Cob (mA) (V) (V) (mA) (MHz) (pF) ton (ns) toff (ns) (dB) *TYP *TYP †TYP *TYP *TYP *TYP *ICEO *ICES

BFW45

Abstract: MPSD52 MPSD02 bfw44 2n5401 2N3114 BFX98 BFS89 BFS90 BFS91 BFT47
Contextual Info: TYPE NO. P O L A R IT Y High Voltage Transistors CASE M A X IM U M R A T IN G S h fe 'c Cob V C E S A T V CE0 Pd (mW) 'c m • Im A I TO-39 TO-39 TO-39 580 800 800 100 100 100 300 140 80 25 30 40 V CER • (V ) min max 'c Im A ) VCE (V ) 50 10 10 max fT

2SA532

Abstract: BC109 BC184 BC549 BC317 2SC734 Y MS181A BC159 8 2SC876 TTP31A ML78M06A BC357
Contextual Info: ALPHANUMERIC INDEX TYPE NO. 057-2G 1611G 1620G 1621-2G 1623G 1641G 1N4001 1N4002 1N40Û3 1N4004 1N4005 1N4006 1N4007 1N5391 1N5392 1N5393 1N5394 1N5395 1N5396 1N5397 1N5398 1N5399 1N5400 1N5401 IN5402 1N5403 1N5404 1N5405 1N5406 1N5407 1N5408 2021-1G 2023G