BLY50A Search Results

BLY50A Datasheets (6)

Filter by Manufacturer

Select Manufacturer

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
BLY50A		Semelab	Bipolar NPN Device in a Hermetically Sealed TO66 Metal Package - Pol=NPN / Pkg=TO66 / Vceo=250 / Ic=3 / Hfe=- / fT(Hz)=15M / Pwr(W)=40	Original	PDF	10.6KB	1
BLY50A		Unknown	Diode, Transistor, Thyristor Datasheets and more	Scan	PDF	60.42KB	1
BLY50A		Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	89.45KB	1
BLY50A		Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	79.54KB	1
BLY50A		Semelab	Transistor Selection Guide	Scan	PDF	50.28KB	1
BLY50A		Texas Instruments	Semiconductor and Components Data Book 1967/8	Scan	PDF	43.79KB	1

BLY50A Price and Stock

Filter by Manufacturer

Texas Instruments


Texas Instruments BLY50A Transistor
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	BLY50A		6,867			1 - 10 - 100 - 1000 - 10000 -	Get Quote

BLY50A Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BLY50A Contextual Info: BLY50A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	bly50a o213aa 1-aug-02	PDF
BSW66 Abstract: BU208A BSW67 BLY49 BLY49A BLY50 BLY50A BSS15 BSS33 BSS50 Contextual Info: 4flE D • fll331fl7 0 0 0 0 4 5 2 SEMELABL 271 ■ S H L B _ SEMELAB BI POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number BI.YA8A BLYA9 BLYA9A BLY50 BLY50A BSS15 BSS17 BSS33 B.SSAA BSS50 BSS51 DSS52 BSS60 BSS61 BSS62 BSS71 DSS72 BSS73	OCR Scan	bly49 bly49a bly50 bly50a +9bss15 bss33 120typ 2/10m 40min bss50 bsw66 bu208a bsw67	PDF
Contextual Info: BLY50A Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a	Original	bly50a o213aa 30-jul-02	PDF
TFK 404 Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09 Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317	OCR Scan	20nttc 10n12 tfk 404 t1s58 +8bci83l germanium diode oa 182 tfk diode transistors 2n 945 v744 akai amplifier tis62 bci09	PDF
BFY83 Abstract: BLY48 Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o BFT37A CECC BFT39 BFT40 BFT44 BFT45 BFT46CSM BFT48 BFT49 BFT53 BFT54 BFT57 BFT58 BFT59 BFT60 BFT61 BFT62 BFT69 BFT70 BFT71 BFT79 BFT80 BFT81 BFW16 BFW43 BFW44 BFX11 BFX15 BFX17 BFX29 BFX30 BFX34	OCR Scan	bft37a bft39 bft40 bft44 +8bft45 bft46csm bft48 bft49 bft53 bft54 bfy83 bly48	PDF
AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	trans-611 dt1521 2n2270 bc107-182ks +16esc182kas esc182kbs esc1q8-183ks eic183kbs 8c183kcs bc109-184ks al102 ates 2n2222a mps kr206 ad149 tis58 tis88 sft353 2n2431 2n4265 bfy29	PDF
2SD1039 Abstract: to-53 BUW64A Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max V A (BR)CEO Of) PD Max ON) hre Min fT (Hz) 'CBO t0N r Max Max (A) (8) Max (Ohms) (CE)Mt Toper Max (°C) Package Style 140 175 140 140 140 140 140 140 140 140 J J J J J J J J J J TO-220	Original	2sc1984 2n4233 2sb761a 2sb929a +82sb941a 2sd1252a 2sd1266a 2sd856a bdt31b 2sd1039 to-53 buw64a	PDF
BF689 Abstract: 2N5651 BF272 2N5652 BF251 BFY82 BFY70 BF316 BF479 BFX36 Contextual Info: STI Type: BF200 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200 VCBO: 30 VCEO: 20 hFE min: 15 hFE max: hFE A: 3.0 VCE: VCE A: hfe: fT: 550 Case Style: TO-206AF/TO-72: Industry Type: BF200 STI Type: BF183 Notes: Polarity: NPN Power Dissipation: .15 Tj: 200	Original	bf200 o-206af/to-72 bf183 bf206 +11bf208 bf689 2n5651 bf272 2n5652 bf251 bfy82 bfy70 bf316 bf479 bfx36	PDF
TIP310 Abstract: B0939 B0941 D510 B0581 Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 20 25 30 35 40 2N6417 2SC3567L 2S036 2SC3567K BUW64B BUW64B BUW64B B02410 2Nl648 BOT290F 40912 2N6263 2N2984 BOT31DF TIP310 2N1650 B0941 B0941 50 tsU~41 ~emel~D PhilipsElec AmperexElec See Index Fujitsu Ltd	Original	bot31cf mje31c b0581 2s035 +62sc3567m b0939 b0939f tip310 b0941 d510	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500ma 240mwf y51 h 120c bd124 +8kt368 bfq59 silec semiconductors bd214 al103 afy18 bd192 mm1711	PDF
2N2222A 338 Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK	OCR Scan	2cy17 2cy18 2cy19 2cy20 +122cy21 500ma 2n2222a 338 tfk 949 2n1167 halbleiter index transistor ad161 bsy19 al103 ac128 tfk 404 tfk 931	PDF
BFX36 Abstract: bss17 BFX81 BFY64 BFY84 250M BFW44 BFX11 BFX17 BFX29 Contextual Info: SEMELAB LTD 37E D Ö1331Ö7 □□□□051 fl O p tio n 1'^ P o ,a rl,y * V CEO 'C cont hFEo Vce /Ic T039 T077 T039 T039 T039 150 45 40 60 65 50m 0.5 1 0.6 0.6 40min 90min 35min 50m’in 50-200 10/10m 5/lm 1/0.1 10.10m 0.4/10m 60M 130M 250M 100M 0.7 0.5 0.8	OCR Scan	bfw44 10/10m bfx11 90min +12bfx17 35min bfx29 bfx30 4/10m bfx34 bfx36 bss17 bfx81 bfy64 bfy84 250m	PDF
TIP27 Abstract: TIP14 iso 1502 BLY48 TIP24 BLY47 BLY47A BLY48A BLY49 BLY49A Contextual Info: Silicon Power Transistors Type Case No. c^ o *” Maximum Ratings at y o E a T vase . . . . = 25°C C haracteristics T case - 25°C « o V CE SAT h FE c o « u v CBO V CEO V V V EBO (DC) V A Ptot !c W A M in. Max. Min. Max. •c •b Max. ft A A V MHz	OCR Scan	tip14 tip24 tip27 bly47a +7bly48a bly49a bly50a bly47 bly48 bly49 iso 1502	PDF
STRS6307 Abstract: STR5412 2N3055 TO-220 S2000A3 STRS6309 S2000a2 BDW36 2SC3883 strs6308 STR6020 Contextual Info: 2N3054 TO-66 2N32741 TO-66 2N4240 TO-66 2N4908 TO-3 2N3054A TO-66 2N3766 TO-66 2N4273 TO-66 2N4909 TO-3 2N3055 TO-3 2N3767 TO-66 2N4298 TO-66 2N4910 TO-66 2N3171 TO-3 2N3771 TO-3 2N4347 TO-3 2N4911 TO-66 2N3172 TO-3 2N3772 TO-3 2N4348 TO-3 2N4912 TO-66 2N3173	Original	2n3054 2n32741 2n4240 2n4908 +162n3054a 2n3766 2n4273 2n4909 2n3055 2n3767 strs6307 str5412 2n3055 to-220 s2000a3 strs6309 s2000a2 bdw36 2sc3883 strs6308 str6020	PDF