31AF Search Results

T1P31DF

Contextual Info: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed

R3309

Abstract: 31DF 4 7 31af BDT31F R3307 31df MSI MS-5 IS551 BDT31DF BDT32AF
Contextual Info: • ^53=131 OGlTbñi 7 BDT31F; 31AF BDT31BF; 31CF BDT31DF 2SE D N AMER PHILIPS/DISCRETE r - 3 3 - 0 7 SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envGlope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed

Contextual Info: • ^53131 o a n b a i 7 N AMER PHILIPS/DISCRETE BDT31F; 31AF BDT31BF; 31CF BDT31DF 3SE D _ A r 3 3 - 0 7 - SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT186 envelope with an electrically insulated mounting base.

31AF

Abstract: 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP31F TIP32BF
Contextual Info: TIP31F; 31AF TIP31BF; 31 CF T1P31DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed

TIP32AF

Abstract: 31af 31df transistor tip31 TIP31BF TIP31DF TIP31F TIP32BF TIP32CF TIP32DF
Contextual Info: TIP31F; 31AF TIP31BF; 31CF TIP31DF PHILIPS INTERNATIONAL SfciE D • V 7110Ô5L 00M34Ô2 =}S3 * P H I N T- 3 3 -0 7 S IL IC O N EPITA XIA L PO W E R T R A N S IS T O R S N PN silicon power transistors in a S O T 1 8 6 envelope with an electrically insulated mounting base.

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 1Gb A ver. This Hynix unbuffered Small Outline Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 1Gb 1st ver. based Unbuffered

Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 1Gb A ver. This Hynix unbuffered Slim Outline Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 1Gb 1st ver. based Unbuffered

HYMP112S64CP6

Abstract: HYMP125S64CP8 DDR2-400 DDR2-533 DDR2-667 DDR2-800 31CFP HYMP164S64CP6
Contextual Info: 200pin Unbuffered DDR2 SDRAM SO-DIMMs based on 1Gb version C This Hynix unbuffered Small Outline Dual In-Line Memory Module DIMM series consists of 1Gb version C DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 200pin glass-epoxy substrate. This Hynix 1Gb version C based

DDR2-400

Abstract: DDR2-533 DDR2-667
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix Registered Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb ver. based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width form factor of

imsg171

Abstract: inmos IMSG171 adv7146kn66 ADV7146KN50 "32 mix" ferrite ADV7148 bt471 bt478 ADV7146 ADV471
Contextual Info: ANALOG DEVICES □ FEATURES Proprietary Antialiasing Function Dejagging of Lines, Arcs, Circles, Fonts, etc. Effective 24-Bit True Color Performance Dynamic Palette Load DPL Function Plug-in Upgrade for Standard VGA RAM-DACs AD V478/A D V 471, ADV476 (ADV ) & Inmos 171/176T

smps 4803

Abstract: samsung electrolytic capacitor Samsung Tantalum Capacitor AN-765 computer smps circuit diagram samsung electrolytic capacitor 10 uF 400V AN765 AN792 JESD51-7 TC1302A
Contextual Info: M TC1302A/B Low Quiescent Current Dual Output LDO Features Description • Dual Output LDO: - VOUT1 = 1.5V to 3.3V @ 300 mA - VOUT2 = 1.5V to 3.3V @ 150 mA • Output Voltage See Table 8-1 • Low Dropout Voltage: - VOUT1 = 104 mV @ 300 mA Typical - VOUT2 = 150 mV @ 150 mA Typical

Contextual Info: TC1301A/B Dual LDO with Microcontroller RESET Function Features Description • Dual Output LDO with Microcontroller Reset Monitor Functionality: - VOUT1 = 1.5V to 3.3V @ 300 mA - VOUT2 = 1.5V to 3.3V @ 150 mA - VRESET = 2.20V to 3.20V • Output Voltage and RESETThreshold Voltage

HYMP125U64CP

Abstract: HYMP112U72 hymp125u64cp8 2gb
Contextual Info: 240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb C version This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb version C DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb version C based

DS00792

Abstract: AN765 AN792 TC1301A TC1301B DS00766 DS00765 Microchip MSOP8
Contextual Info: TC1301A/B 带复位功能的双输出 LDO 特性 概述 • 具备复位监控功能的双输出 LDO： - VOUT1 = 1.5V 至 3.3V @ 300 mA - VOUT2 = 1.5V 至 3.3V @ 150 mA - VRESET = 2.20V 至 3.20V • 可选输出电压和 RESET 阈值电压 （见表 8-1）

CMI9880

Abstract: OZ2216 LID591 AOS4916 CH747 24LC02A Socket AM2 HP multibay ALC880D M5285
Contextual Info: 1 2 3 AC/BATT CONNECTOR PG 42 A 4 5 6 DC/DC Dothan/Yonah 7 CLOCKS +1.05V/+1.5V +1.8V/+0.9V PG 37~41 +3V/+5V 478 Micro-FCPGA it c a PG 42 +1.05V +1.8VSUS B Alviso 400/533 MHZ DDR II DDR-SODIMM1 PG 10,11 +1.8VSUS 400/533 MHZ DDR II h c +2.5V DDR-SODIMM2 PG 10,11

AN765

Abstract: AN792 JESD51-7 TC1301A TC1301B
Contextual Info: M TC1301A/B Dual LDO with Microcontroller RESET Function Features Description • Dual Output LDO with Microcontroller Reset Monitor Functionality: - VOUT1 = 1.5V to 3.3V @ 300 mA, - VOUT2 = 1.5V to 3.3V @ 150 mA - VRESET = 2.20V to 3.20V • Output Voltage and RESET Threshold Voltage

sfc 2812

Abstract: AN765 AN792 JESD51-7 TC1301A TC1301B capacitor 470 uf with ESR rating
Contextual Info: TC1301A/B Dual LDO with Microcontroller RESET Function Features Description • Dual Output LDO with Microcontroller Reset Monitor Functionality: - VOUT1 = 1.5V to 3.3V @ 300 mA - VOUT2 = 1.5V to 3.3V @ 150 mA - VRESET = 2.20V to 3.20V • Output Voltage and RESET Threshold Voltage

Electro SEX

Abstract: imsg171 TRA 1309 black diagram of ic 8086
Contextual Info: ANALOG DEVICES □ FEATURES Proprietary Antialiasing Function Dejagging of Lines, Arcs, Circles, Fonts, etc. Effective 24-Bit True Color Performance Dynamic Palette Load DPL Function Plug-in Upgrade for Standard VGA RAM-DACs ADV478/ADV471, ADV476 (ADV*) & Inmos 171/176t

JESD51-7

Abstract: TC1301A TC1301B AN765 AN792 TC1301
Contextual Info: TC1301A/B Dual LDO with Microcontroller RESET Function Features Description • Dual Output LDO with Microcontroller Reset Monitor Functionality: - VOUT1 = 1.5V to 3.3V @ 300 mA - VOUT2 = 1.5V to 3.3V @ 150 mA - VRESET = 2.20V to 3.20V • Output Voltage and RESET Threshold Voltage

K643

Abstract: 65A3 n373 276C 238e ts-w 307f K573 2732 memory chip motorola 5118 user manual ber 2a37 rX 433 N
Contextual Info: S19204CBI12 MEKONG Datasheet Rev 1.9 September 16, 2002 AMCC - PROPRIETARY AND CONFIDENTIAL RESTRICTED DISTRIBUTION NDA REQUIRED AMCC - Confidential and Proprietary Dear customer, Thank you for choosing an AMCC device. We appreciate your confidence in our products.

HYMP112u64p8

Contextual Info: 240pin DDR2 SDRAM Unbuffered DIMMs based on 1Gb A ver. This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb ver. based DDR2 Unbuffered DIMM series provide a high performance 8 byte interface in 133.35mm width form factor of

1B36

Contextual Info: 8A51 123245672859ABC5DE2F2DB6A255AC2 1 2343563781 9ABCD31EF758676731 119119111 1 1A&#' "1 !"(&)%1 1 1 1 1($ "#$!14# *1!+&!,1 1 '()*(19+,1 -./1!015CF1112(19+,1 3*1!0 142!01 31!0 156461E4)1 .-1!01$AC831#C&7311

D768

Abstract: 2F67
Contextual Info: 1 234567381 1 • • • • • • • • • • • • • • • • • 1 1 964A1B65C651DBDEF8B453A1E1BD375371  C37"B7$4D31E1&' *1451)+,1-1.&*1451+.,1(1

HYMP351R72AMP4-E3

Abstract: DDR2-400 DDR2-533 DDR2-667 HYMP112R72AP8-E3 HYMP125R72AP4-E3 Q22-D
Contextual Info: 240pin Registered DDR2 SDRAM DIMMs based on 1Gb A ver. This Hynix unbuffered Dual In-Line Memory Module DIMM series consists of 1Gb 1st ver. DDR2 SDRAMs in Fine Ball Grid Array(FBGA) packages on a 240pin glass-epoxy substrate. This Hynix 1Gb ver. based Registered DDR2 DIMM series provide a high performance 8 byte interface in 5.25" width form factor of