TIP31DF Search Results
TIP31DF Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| TIP31DF | Philips Semiconductors | Silicon Epitaxial Power Transistors | Original | 155.33KB | 7 |
TIP31DF Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: TIP31DF Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)160 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)15 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)3.0 |
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tip31df | |
TIP32AF
Abstract: 31af 31df transistor tip31 TIP31BF TIP31DF TIP31F TIP32BF TIP32CF TIP32DF
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tip31ftip31bftip31df00m34+9 | |
T1P31DFContextual Info: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed |
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tip31ftip31bft1p31dftip32f+5 | |
TIP31AF
Abstract: TIP31BF TIP31CF TIP31DF TIP31F TIP32BF TIP32DF TIP32F
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tip32ftip32bftip32dfot186+5 | |
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Contextual Info: TIP32F; 32AF TIP32BF; 32CF TIP32DF y v SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors, each in a SO T186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed |
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tip32ftip32bftip32dftip31f+5 | |
31AF
Abstract: 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP31F TIP32BF
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tip31ftip31bft1p31dftip32f+11 |