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    T1P31DF

    Contextual Info: TIP31F; 31AF TIP31BF; 31CF T1P31DF J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a SOT 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio amplifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		tip31ftip31bft1p31dftip32f+5tip32aftip32bftip32cftip32dfbb53331 PDF

    tip 31

    Abstract: c2688 L transistor DA 2688 DA 2688 tip 120 TRANSISTOR equivalent
    Contextual Info: "TEXAS INSTR -COPTÒF ^2 »E 0Q3b?ti0 8 9 0 1 7 2 6 TEXAS INSTR <OPTO 62C 3 ó 7 60 TIP 31, TIP31 A , TIP 31B, TIP 31 C , T1P31D, TIP 31 E, TIP31F N-P-N SILICON POWER TRAN SISTO RS D ECEM BER 1970 - R EV ISED O CTOBER 1984 40 W at 2 5 ° C C ase Temperature


    OCR Scan     		tip31t1p31dtip31ft0-22dab+5tip 31c2688 ltransistor da 2688da 2688tip 120 transistor equivalent PDF

    31AF

    Abstract: 31df TIP32AF T1P31 31DF 4 2B T1P31C TIP31 PNP Transistor TIP31BF TIP31F TIP32BF
    Contextual Info: TIP31F; 31AF TIP31BF; 31 CF T1P31DF SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistors in a S O T 186 envelope w ith an electrically insulated mounting base. They are intended fo r use in audio am plifier output stages, general purpose amplifiers, and high-speed


    OCR Scan     		tip31ftip31bft1p31dftip32f+11tip32aftip32bftip32cftip32dfbs3t3131af31dft1p3131df 4 2bt1p31ctip31 pnp transistor PDF