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    AVANCE Search Results

    AVANCE Datasheets (9)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    AC97 Placement
    		Avance Logic Original PDF 28.96KB 1
    ALC100
    		Avance Logic Original PDF 21.48KB 2
    ALC100P
    		Avance Logic Original PDF 21.48KB 2
    ALC200
    		Avance Logic Original PDF 375.7KB 4
    ALC200
    		Avance Logic Original PDF 1.79MB 32
    ALC200
    		Avance Logic Original PDF 369.9KB 3
    ALS120
    		Avance Logic Integrated Audio Controller w- 3D + ALSFM Synthesizer Original PDF 237.13KB 28
    ALS300
    		Avance Logic Media Audio Controller SPEC Original PDF 244.05KB 66
    ALU100
    		Avance Logic USB AUDIO CONTROLLER Original PDF 208.82KB 15

    AVANCE Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Avance

    Contextual Info: Uddannelsesplan efterår 2000 og forår 2001 September Avanceret Assembly November 16. – 18. CATIA V5 grunduddannelse CATIA V5 grunduddannelse for V4 brugere Oktober 11. – 13. 8. – 10. 26. 23. 23. 02. – 03. 14. – 15. 21. Freestyle Shaper Februar


    Original     		DK-7800 Avance PDF

    Contextual Info: QFET N-CHANNEL FQAF34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area


    Original     		FQAF34N20 PDF

    Contextual Info: QFET N-CHANNEL FQPF6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area


    Original     		FQPF6N50 O-220F PDF

    Contextual Info: QFET N-CHANNEL FQPF6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area


    Original     		FQPF6N25 O-220F PDF

    Contextual Info: QFET N-CHANNEL FQPF5N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ. • Extended Safe Operating Area


    Original     		FQPF5N20 O-220F PDF

    Contextual Info: QFET N-CHANNEL FQP8N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ. • Extended Safe Operating Area


    Original     		FQP8N25 O-220 PDF

    Contextual Info: QFET N-CHANNEL FQP6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area


    Original     		FQP6N25 O-220 PDF

    Contextual Info: QFET N-CHANNEL FQB19N20L, FQI19N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ.


    Original     		FQB19N20L, FQI19N20L FQB19N20L PDF

    Contextual Info: QFET N-CHANNEL FQP4N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ. • Extended Safe Operating Area


    Original     		FQP4N50 O-220 PDF

    Contextual Info: QFET N-CHANNEL FQB6N25, FQI6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ.


    Original     		FQB6N25, FQI6N25 FQB6N25 PDF

    Contextual Info: QFET N-CHANNEL FQA9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area


    Original     		FQA9N50 PDF

    FQP6N50

    Contextual Info: QFET N-CHANNEL FQP6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area


    Original     		FQP6N50 O-220 FQP6N50 PDF

    Contextual Info: QFET N-CHANNEL FQP4N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 7.0nC Typ. • Extended Safe Operating Area


    Original     		FQP4N20L O-220 PDF

    Contextual Info: QFET N-CHANNEL FQA16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area


    Original     		FQA16N25 PDF

    FQD7N20

    Contextual Info: QFET N-CHANNEL FQD7N20, FQU7N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ.


    Original     		FQD7N20, FQU7N20 FQD7N20 PDF

    Contextual Info: QFET N-CHANNEL FQD12N20, FQU12N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 18nC Typ.


    Original     		FQD12N20, FQU12N20 FQD12N20 PDF

    Contextual Info: QFET N-CHANNEL FQB9N50, FQI9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ.


    Original     		FQB9N50, FQI9N50 FQB9N50 PDF

    FQA34N20

    Contextual Info: QFET N-CHANNEL FQA34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area


    Original     		FQA34N20 FQA34N20 PDF

    Contextual Info: QFET N-CHANNEL FQB4N25, FQI4N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ.


    Original     		FQB4N25, FQI4N25 FQB4N25 PDF

    Contextual Info: QFET N-CHANNEL FQAF19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area


    Original     		FQAF19N20 PDF

    Contextual Info: QFET N-CHANNEL FQP19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area


    Original     		FQP19N20 O-220 PDF

    Contextual Info: QFET N-CHANNEL FQP16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area


    Original     		FQP16N25 O-220 PDF

    Contextual Info: QFET N-CHANNEL FQD8N25, FQU8N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ.


    Original     		FQD8N25, FQU8N25 FQD8N25 PDF

    ALC100P

    Abstract: Avance Logic 24.576MHZ ALC100 Crystal quartz 24.576MHz ALC200 10pF capacitors 22pf equivalent HC-49 Crystal 16 MHz 10 pF
    Contextual Info: Avance Logic, Inc. ALC100 Quartz Crystal Requirement for ALC100/ALC100P This document describes the quartz crystal requirements for clocking ALC100/P. 2. Crystal Requirements General Specifications Holder Type Crystal Freq. Oscillation Mode Load Cap. CL


    Original     		ALC100 ALC100/ALC100P ALC100/P. ALC100/P 576MHz. ALC100/P ALC200. 100mW ALC100P Avance Logic 24.576MHZ ALC100 Crystal quartz 24.576MHz ALC200 10pF capacitors 22pf equivalent HC-49 Crystal 16 MHz 10 pF PDF