AVANCE Search Results
AVANCE Datasheets (9)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| AC97 Placement | Avance Logic | Original | 28.96KB | 1 | |||
| ALC100 | Avance Logic | Original | 21.48KB | 2 | |||
| ALC100P | Avance Logic | Original | 21.48KB | 2 | |||
| ALC200 | Avance Logic | Original | 375.7KB | 4 | |||
| ALC200 | Avance Logic | Original | 1.79MB | 32 | |||
| ALC200 | Avance Logic | Original | 369.9KB | 3 | |||
| ALS120 | Avance Logic | Integrated Audio Controller w- 3D + ALSFM Synthesizer | Original | 237.13KB | 28 | ||
| ALS300 | Avance Logic | Media Audio Controller SPEC | Original | 244.05KB | 66 | ||
| ALU100 | Avance Logic | USB AUDIO CONTROLLER | Original | 208.82KB | 15 |
AVANCE Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
AvanceContextual Info: Uddannelsesplan efterår 2000 og forår 2001 September Avanceret Assembly November 16. – 18. CATIA V5 grunduddannelse CATIA V5 grunduddannelse for V4 brugere Oktober 11. – 13. 8. – 10. 26. 23. 23. 02. – 03. 14. – 15. 21. Freestyle Shaper Februar |
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dk-7800avance | |
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Contextual Info: QFET N-CHANNEL FQAF34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area |
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fqaf34n20 | |
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Contextual Info: QFET N-CHANNEL FQPF6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area |
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fqpf6n50o-220f | |
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Contextual Info: QFET N-CHANNEL FQPF6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area |
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fqpf6n25o-220f | |
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Contextual Info: QFET N-CHANNEL FQPF5N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ. • Extended Safe Operating Area |
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fqpf5n20o-220f | |
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Contextual Info: QFET N-CHANNEL FQP8N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ. • Extended Safe Operating Area |
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fqp8n25o-220 | |
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Contextual Info: QFET N-CHANNEL FQP6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. • Extended Safe Operating Area |
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fqp6n25o-220 | |
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Contextual Info: QFET N-CHANNEL FQB19N20L, FQI19N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 50nC Typ. |
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fqb19n20lfqi19n20l | |
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Contextual Info: QFET N-CHANNEL FQP4N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 10nC Typ. • Extended Safe Operating Area |
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fqp4n50o-220 | |
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Contextual Info: QFET N-CHANNEL FQB6N25, FQI6N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. |
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fqb6n25fqi6n25 | |
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Contextual Info: QFET N-CHANNEL FQA9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. • Extended Safe Operating Area |
Original |
fqa9n50 | |
FQP6N50Contextual Info: QFET N-CHANNEL FQP6N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 17nC Typ. • Extended Safe Operating Area |
Original |
fqp6n50o-220 | |
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Contextual Info: QFET N-CHANNEL FQP4N20L FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 7.0nC Typ. • Extended Safe Operating Area |
Original |
fqp4n20lo-220 | |
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Contextual Info: QFET N-CHANNEL FQA16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area |
Original |
fqa16n25 | |
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FQD7N20Contextual Info: QFET N-CHANNEL FQD7N20, FQU7N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 8.0nC Typ. |
Original |
fqd7n20fqu7n20 | |
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Contextual Info: QFET N-CHANNEL FQD12N20, FQU12N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 18nC Typ. |
Original |
fqd12n20fqu12n20 | |
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Contextual Info: QFET N-CHANNEL FQB9N50, FQI9N50 FEATURES BVDSS = 500V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 28nC Typ. |
Original |
fqb9n50fqi9n50 | |
FQA34N20Contextual Info: QFET N-CHANNEL FQA34N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 60nC Typ. • Extended Safe Operating Area |
Original |
fqa34n20 | |
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Contextual Info: QFET N-CHANNEL FQB4N25, FQI4N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 6.0nC Typ. |
Original |
fqb4n25fqi4n25 | |
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Contextual Info: QFET N-CHANNEL FQAF19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area |
Original |
fqaf19n20 | |
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Contextual Info: QFET N-CHANNEL FQP19N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 31nC Typ. • Extended Safe Operating Area |
Original |
fqp19n20o-220 | |
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Contextual Info: QFET N-CHANNEL FQP16N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 30nC Typ. • Extended Safe Operating Area |
Original |
fqp16n25o-220 | |
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Contextual Info: QFET N-CHANNEL FQD8N25, FQU8N25 FEATURES BVDSS = 250V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ. |
Original |
fqd8n25fqu8n25 | |
ALC100P
Abstract: Avance Logic 24.576MHZ ALC100 Crystal quartz 24.576MHz ALC200 10pF capacitors 22pf equivalent HC-49 Crystal 16 MHz 10 pF
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Original |
alc100alc100/alc100palc100/p576mhz+10 | |