BD330 Search Results

BD3308

Contextual Info: , UNPLBL ISHED WA5 06-56740, RL5E PER f ADDED -2 PER f REV PER ECN BD3308 5UP5D -2 PER EC 0020-492-96 REV PER EC 0G4CM5S-96 CONNECTOR M A T E5 WI T H ANY 7 6 HD-22 AMPLIM1TE S E R I E S , F L A M E R ET A RD AN T 9 4 PO LYE ST ER , COLOR; V - 0 R AT E D

BD329

Abstract: BD330 transistor BD329 transistor BD330 Transistors BD329 power transistor bd329 Power Transistor 1975 B0329 IC TRANSISTOR k 744
Contextual Info: BD329 J V s. SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r -r a d io output sta g e s. P -N -F com plem ent is BD330. M atched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A

Diode LT 330D

Contextual Info: MOTOROLA Order this document by MBD110DWT1/D SEMICONDUCTOR TECHNICAL DATA M BD110DW T1 M BD330DW T1 M BD770DW T1 Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new S O T -363 package is a solution which simplifies

b0330

Abstract: BD330 Transistors BD330 BD329 A03435 BD329/BD330 transistor BD330
Contextual Info: BD330 J V_ S IL IC O N PLANAR EPITAXIAL PO W ER T RA N SISTO R P -N -P tr a n s is to r in a S O T -32 p la stic envelope intended fo r c a r -r a d io output sta g e s. N 'P -N com plem ent is BD329. M atched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A

b0330

Contextual Info: BD330 SILICON PLANAR EPITAXIAL POWER TRANSISTOR P-N -P tra n s is to r in a SOT-32 plastic envelope intended for car-rad io output stages. N-P-N complement is BD329. Matched p a irs can be supplied. Q U IC K R E F E R E N C E D A T A C o llecto r-em itter voltage Vgg = 0

BD330

Abstract: Q 817 BD329 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification PNP power transistor

transistor ph 45 v

Contextual Info: DISCRETE SEMICONDUCTORS BD330 PNP power transistor 1999 Apr 26 Product specification Supersedes data of 1997 Apr 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP power transistor BD330 FEATURES PINNING • High current max. 3 A

Contextual Info: BD329 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r -r a d io output sta g e s. P-N -P com plem ent is BD330. M atched p a irs can be supplied. Q UICK REFERENCE D A TA C o lle c to r-e m itte r voltage VgE - 0

bd330

Contextual Info: BD329 _ SILICON PLANAR EPITAXIAL POWER TRANSISTOR N - I’ -N tr a n s is to r in a SO T-32 p la s tic package, intended fo r c a r -radio output stages. P-N -P co m p lem en t is BD330. M atch ed p a irs can be supplied. Q UICK REFERENCE D A T A

BD329/BD330

Abstract: BD329 BD330
Contextual Info: BD329 PHILIPS INTERNATIONAL 5fc>E D TllDôHb 004EÛ7G =170 • P H I N ■ T " 3 3 -0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P -N tr a n s is to r in a SOT-32 p la stic envelope intended fo r c a r - r a d io output sta g e s. P -N -P com plem ent is BD330. M atched p a irs can be supplied.

BD330

Abstract: Sp pnp transistor BD330 transistor 1211 BD329 BP317 philips all transistor car radio
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BD330 PNP power transistor Product specification Supersedes data of 1997 Apr 22 1999 Apr 26 Philips Semiconductors Product specification PNP power transistor BD330 PINNING FEATURES • High current max. 3 A

c2611

Abstract: BD437 8229 2SB649A 2SD669A 2SB649 2SB772 2SC3417 2SD882 BD238
Contextual Info: TO-126 PACKAGE MX MICROELECTRONICS ● Applied for power drive power switch . TYPE 2SB772 2SD882 2SB649 2SB649A 2SD669A 2SD669A 2SC3417 BD437 BD238 BD329 BD330 NPN PD OR *Tc= Ic PNP 25℃ mW (mA) PNP NPN PNP PNP NPN NPN NPN NPN PNP NPN PNP ICBO VCBO VCEO * ICEO

BD329

Abstract: bd330
Contextual Info: Philips Semiconductors Product specification PNP power transistor BD330 FEATURES PINNING • High current max. 3 A PIN • Low voltage (max. 20 V). emitter 2 collector, connected to metal part of mounting surface 3 base APPLICATIONS • Power switching and amplification, especially in portable

bd330

Abstract: bd329
Contextual Info: BD329 PHILIPS INTERNATIONAL SbE D 7110A2b 004E67D ^76 M P H I N • T " 3 3 ' 0 7 SILICON PLANAR EPITAXIAL POWER TRANSISTOR N -P-N tra n s is to r in a S O T -3 2 p la stic envelope intended fo r c a r -r a d io output sta g e s. P-N -P com plem ent is BD330. M atched p a irs can be supplied.

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

2n2222a SOT23

Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes