BD202F Search Results

Contextual Info: BD202F; BD204F BDX78F PHILIPS in t e r n a t io n a l SbE ]> • 7110fl2t 0042fl5b flbO M P H I N T-33-17 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively.

BD201F

Abstract: BD203F BD202 BD201
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD201F/203F DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO = 45V(Min)- BD201F 60V(Min)- BD203F ·Complement to Type BD202F/204F APPLICATIONS ·Designed for use in hi-fi equipment delivering an output

S293

Abstract: BDX71 BD201 BD201F BD202F BD203F BD204F BDX77F BDX78F q342
Contextual Info: BD201F; BD203F; BDX77F SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BD202F, BD204F and BDX78F. QUICK REFERENCE DATA BD201F BD203F BDX77F Collector-base voltage

BD203F

Abstract: BD201F BD202F BD204F BDX77F BDX78F
Contextual Info: BD202F; BD204F BDX78F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes w ith an electrically insulated mounting base. NPN complements are BD201F, BD203F and BDX77F respectively. Q UICK REFERENCE D A T A BD202F BD204F BDX78F

BD204

Abstract: BD202F til 31a BD201F BD203F BD204F BDX77F BDX78F Philips 119
Contextual Info: _ PHILIPS INTERNATIONAL SbE D • BD202F; BD204F BDX78F J 7110Û2L 0042fl5b flbO M P H I N T-33-l7 SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors inSOT186 envelopes with an electrically insulated mounting base.

Contextual Info: BD201F; BD203F; BDX77F _ _ _ _ _ _ _ _ _ _ _ _ _ _ _A SILICON EPITAXIAL POWER TRANSISTORS NPN Silicon power transistors in a SOT186 envelope with an electrically insulated mounting base. PNP complements are BD202F, BD204F and BDX78F. QUICK REFERENCE DATA BD201F

Contextual Info: J V BD202F; BD204F BDX78F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors in SOT186 envelopes with an electrically insulated mounting base. NPN complements are BD201F, BD203F and B D X 7 7 F respectively. Q U IC K R E F E R E N C E D A T A

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40