BY206 Search Results

BY207

Abstract: BY206GP by206 BY207G
Contextual Info: BY206GP thru BY207GP M IN IA TU R E G L A S S P A S S IV A T E D J U N C T IO N Pl. A ST IC FAST S W IT C H IN G RECTIFIER ENT FEA TU RES • HIGH TEM PERATU RE M t ALLU RG ICALLY BO N DED NO C O M P R E SSIO N CO N TACTS A S FOUND IN D IO DECO N STRU CTED R E C T IFIER S

flash trigger transformer

Abstract: xenon inverter circuit xenon light source circuit diagram flyback transformer 4kV Xenon Flash 6v 400V, DC-AC INVERTER light source xenon flash tube xenon tube "Flash tube" pulse transformer transistor
Contextual Info: Design Note 25 Issue 2 October 1995 Flash Gun Inverter Using Super E-Line Bipolar Transistors RM 6 CORES 0.15mm GAP D3 BY206GP 10 R1 390 128 23 NEON C1 6V 100uF 10V R2 68 ZTX 300 T2 C3 750uF 350V ZTX 650 TR1 TR2 R4 1M D2 1N4148 0.1uF D1 R3 1N4148 680K R5 3M

BY207

Contextual Info: GENL INSTR/ PODER ESE D • 3flTG13? QQG371ti ñ ■ ~ r - 0 2 - 0 1 BY206GP THRU BY207GP MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 350 to 600 Volts Current - 0.4 Amperes FEATURES ♦ High temperature metallurglcaliy bonded con­

by206

Abstract: BY206 diode
Contextual Info: Diotec BY206 Fast Silicon Rectifiers Schnelle Silizium Gleichrichter Nominal current Nennstrom 400 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 350 V Plastic case Kunststoffgehäuse DO-15 Weight approx. Gewicht ca. 0.4 g Plastic material has UL classification 94V-0

by207

Abstract: BY206GP
Contextual Info: BY206GP THRU BY207GP MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 350 to 600 Volts Current - 0.4 Amperes FEATURES ♦ High temperature metallurgical^ bonded con­ structed rectifiers ♦ For use in high frequency rectifier circuits

philips blx15

Abstract: BLX15 Philips Application BLX15 TRANSISTOR blx15 Blx15 philips 4312 020 36640 blx15 push pull PHILIPS 4312 amplifier carbon resistor CIL TRANSISTOR 188
Contextual Info: PHI L IP S INTERNATIONAL bSE D m 7110fl2ki ODb3471 R74 BLX15 PHIN _ _ _ _ _ _ _ _ _ A_ _ _ _ _ _ _ H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band:

BY207

Abstract: BY206GP BY207GP 30011 munch U056 by206
Contextual Info: B Y 206G P TH R U B Y 207G P FEATURES • High temperature metallurgically bonded constructed rectifiers • For use in high frequency rectifier circuits • Plastic package has Underwriters Laboratory FlammabHity Classification 94V-0 • Fast switching for high efficiency

Contextual Info: N AUER PHILIPS/DISCRETE b'lE D bbS3T31 □ D2'132b m b I IAPX BLW34 U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation

Contextual Info: • b b s a ^ i a o s ^ a a 070 N AMER PHILIPS/DISCRETE ■ b lE A P X BLW32 D y v U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

transistor itt 975

Abstract: BLX15 philips blx15 BY206 blx15 push pull hie bd135 PHILIPS 4312 amplifier Philips Application BLX15 TRANSISTOR blx15 4312 020 36640
Contextual Info: N AMER PHILIPS/DISCRETE bTE D • bbS3^31 002^574 b00 BLX15 IAPX J H.F./V.H.F. POWER TRANSISTOR Silicon n-p-n power transistor for use in industrial and military s.s.b. and c.w. equipment operating in the h.f. and v.h.f. band: • rated for 150 W P.E.P. at 1,6 M Hz to 28 MHz

induction cooker fault finding diagrams

Abstract: enamelled copper wire swg table AC digital voltmeter using 7107 wiring diagram IEC320 C14 Inlet Male Power Socket Fuse Switch db 3202 diac siemens mkl capacitor YY63T varta CR123A HXD BUZZER lt700 transformer
Contextual Info: 03front order p1_3 1/29/02 3:01 PM C3 Page 1 components cables & connectors actives 18 57 semiconductors optoelectronics passives contents 72 81 87 91 capacitors resistors transformers, ferrites & inductors emc, filters & suppression electromechanical 92 120

BY206

Abstract: BRY61 BZY88C8V2 BRY61 EQUIVALENT "Programmable Unijunction Transistor" unijunction application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BRY61 Programmable unijunction transistor Product specification Supersedes data of 1997 Jul 21 1999 Apr 27 Philips Semiconductors Product specification Programmable unijunction transistor DESCRIPTION

Z0840004PSC

Abstract: Z0853006PSC sumitomo crm1033b Sumitomo CRM 1033B Z84C008 z0840004 Z0847004PSC Z0843006PSC Z0843004PSC Z84C3006PEC
Contextual Info: ZiLOG, Inc. 2H - Year 2002 Quality And Reliability Report ZAC03-0004 ZiLOG 2002Quality and Reliability Report Chapter Title and Subsection TABLE OF CONTENTS Chapter Title and Subsection Chapter 1 - ZiLOG’s Quality Culture Reliability And Quality Assurance Policy Statement………………………………. 1 - 1

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

BY206

Abstract: C102F BZY88-C3V3 BLW34 BZY88C-3V3 100A-2RO-C-PX-50 uhf amplifier design Transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW34 UHF linear power transistor Product specification August 1986 Philips Semiconductors Product specification UHF linear power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in

DL 711 PHILIPS

Abstract: BY206 BLW34 BZY88-C3V3 BZY88C3V3 philips dl 711 cc cv2 100 170 mml 600 TRANSISTOR BLW34 preset potentiometer
Contextual Info: bSE T> 711DÖ2b 0Db35S3 35T • PHIN BLW34 P H ILIPS INTERNATIONAL U.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear u.h.f. am plifiers fo r television transmitters and transposers. The excellent d.c. dissipation properties fo r class-A operation

BSW68A 1990

Abstract: bsw68a
Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO

ru 94v-0

Abstract: ru 94v0 GP25M BY127GP BY127 RGP02-12 BY206GP BY126 BY133GP BYX10GP
Contextual Info: SUPERECTIFIER .25 to 3.0 Amperes 50 Volts to 4000 Volts Introduction No other .25 to 3.0 Ampere rectifiers of any kin d — plastic, glass, o r metal— can match or even approach SUPERECTIFIER's com bination of fe a tu re s . .the result of General Instrum e nt’s unique

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

BY206

Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a
Contextual Info: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A

BY206

Abstract: BLW78 1206 resistor MGP560 mica trimmer capacitor polyester capacitor BR 8 TRANSISTOR
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BLW78 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor BLW78 It has a 1⁄2" flange envelope with a ceramic cap. All leads are isolated from the flange.

BY206 diode

Abstract: tv schematic diagram PHILIPS china tv schematic diagram free BY206 china tv schematic diagram transposers BLV58 AN98028 BD136 uhf circulator
Contextual Info: APPLICATION NOTE A linear broadband 12 W amplifier for band IV/V TV transposers based on the BLV58 AN98028 Philips Semiconductors A linear broadband 12 W amplifier for band IV/V TV transposers based on the CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 GENERAL CONSIDERATIONS