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    BSW66A Search Results

    BSW66A Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BSW66A
    Philips Semiconductors Programmable logic arrays (16 x 48 x 8) - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF 68.05KB 8
    BSW66A
    Philips Semiconductors NPN switching transistors - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF 52.05KB 8
    BSW66A
    Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF 10.8KB 1
    BSW66A
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 55.23KB 1
    BSW66A
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 171.34KB 1
    BSW66A
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 170.84KB 1
    BSW66A
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 40.31KB 1
    BSW66A
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 99.71KB 1
    BSW66A
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 108.33KB 1
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    BSW66A Price and Stock

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    Philips Semiconductors BSW66A

    1000 MA, 100 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BSW66A 6
    • 1 $15.00
    • 10 $7.50
    • 100 $7.50
    • 1000 $7.50
    • 10000 $7.50
    Buy Now

    NXP Semiconductors BSW66A

    1000 MA, 100 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BSW66A 2
    • 1 $15.00
    • 10 $10.00
    • 100 $10.00
    • 1000 $10.00
    • 10000 $10.00
    Buy Now

    Central Semiconductor Corp BSW66A

    BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BSW66A 278
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    BSW66A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: BSW66A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


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    bsw66ao205ad17-jul-02 PDF

    BSW68A 1990

    Abstract: bsw68a
    Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO


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    bsw66absw67absw68aby206+1bsw68a 1990 PDF

    Contextual Info: BSW66A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


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    bsw66ao205ad19-jun-02 PDF

    BY206

    Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a
    Contextual Info: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A


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    bsw66absw67absw68a500ma+9bav10by2067z776s17765568a diodeby206 diode82s2silicon epitaxial planar transistor philipsk 68a PDF

    data sheet BSW67A

    Abstract: BSW67A BP317 BSW66A BSW68A
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors


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    m3d111bsw66absw67absw68a+5mam317sca54117047/00/02/pp8data sheet bsw67abp317 PDF

    BSW66A

    Contextual Info: BSW66A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


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    bsw66ao205ad1-aug-02 PDF

    BSW68A

    Abstract: BSW67A BSW66A
    Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


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    bsw66absw67absw68amam317 PDF

    BY206

    Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
    Contextual Info: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter


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    bsw66a711002bdd4237bsw67a+9bsw68a711qa2bq0m53b5by206k 68asilicon epitaxial planar transistor philipssilicon planar epitaxial transistorsphilips 1990lg 68a PDF

    BSW66A

    Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 100.0 V NO. BSW66A Voltage, Collector to Emitter (VCE) 100.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 6.0 V empty empty Collector Current (IC) 2.0 A empty empty A CASE TO-39 5.0


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    bsw66a PDF

    BSW66A

    Abstract: bsw67a BSW63A bsw68a
    Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


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    bsw66absw67absw68absw68e+1bsw63a PDF

    2sa648 transistor

    Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    npn110pt6905apt6905bpt6905c+15100msa100m5amm2261mm2262mm22632sa648 transistorusaf516es047mstc5204usaf517es060m2sa614st9001usaf516es048mstc5610st*5519bd538 PDF

    2SC114 transistor

    Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    npn110pt6905apt6905bpt6905c+15100msa100m5amm2261mm2262mm22632sc114 transistortransistor 2sc1142sc114bss43d28a9fzj 101fzj 131vx3866mht5001usaf516es047m PDF

    BDV56

    Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
    Contextual Info: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”


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    2n22182n2218a2n22192n2219a+142n29132n29142n29152n29162n29172n2918bdv56bdv572n3055tipl777bus11acv9936bux112n6033 PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8 PDF

    bu808 equivalent

    Abstract: bu808 2N4001 diode equivalent bu808 2N3953 2N4957 2N3908 2N3916 2N3930 BU143
    Contextual Info: STI Type: 2N3778 Notes: Polarity: PNP Power Dissipation: 5.0 VCBO: 40 VCER: ICBO: ICBO ua: hFE: 10 hFE A: .2 VCE: VBE: IC A: COB: fT: 1.0 Case Style: TO-205AD/TO-39 Industry Type: 2N3778 STI Type: 2N3792 Notes: *BVCBO Polarity: PNP Power Dissipation: 150 Tj: 200


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    2n3778o-205ad/to-392n3792o-204aa/to-3+122n37912n3798bu808 equivalentbu8082n4001 diodeequivalent bu8082n39532n49572n39082n39162n3930bu143 PDF

    2A 40V NPN

    Abstract: 150v 3A pnp BSW68A bu326
    Contextual Info: Search Results Part number search for devices beginning "BSS71" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD BSS71 NPN TO18 200V 0.5A 40 250 10/30m 50MHz


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    bss71bss71csmbss71csm-jqr-bbss71dcsm+6bss71dcsm-jqr-b10/30m2a 40v npn150v 3a pnpbsw68abu326 PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680 PDF

    2n2222 h 331 transistors

    Abstract: 2N2222A 331 2n2222 -331 transistors PNP 2n3906 331 2n2222 - 331 jf494 2n2222 2n5401 2n5551 BC337 2n2222 331 transistors PNP 2n4403 331
    Contextual Info: Philips Semiconductors Leaded transistors Selection guide GENERAL PURPOSE APPLICATIONS h re TYPE NUMBER VcEO V •c (mA) *T Plot (mW) min. max. typi (MHz) PAGE NPN BC107 45 100 300 125 500 300 87 BC108 20 100 300 125 900 300 87 BC109 20 100 300 240 900 300


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    bc107bc108bc109bc140+15bc141bc337bc337abc338bc368bc3752n2222 h 331 transistors2n2222a 3312n2222 -331 transistorspnp 2n3906 3312n2222 - 331jf4942n2222 2n5401 2n55512n2222 331 transistorspnp 2n4403 331 PDF

    BU104

    Abstract: BSX21 BU103 8SS44
    Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC


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    bs250csm48ss44bss44bss50+9bss51bss52bss60bss61bss62bss71bu104bsx21bu103 PDF

    2N2219 transistor

    Abstract: IC 744 BSW68A BDX36 2N2219 2N2219A BFX34 BFX85 BSW66A BSW67A
    Contextual Info: Philips Semiconductors Small-signal Transistors Selection guide LEADED DEVICES continued NPN MEDIUM-POWER SWITCHING TRANSISTORS TYPE NUMBER 2N2219 PACKAGE TO-39 VCEO max. (V) IC max. (mA) Ptot max. (mW) hFE min. hFE max. fT min. (MHz) toff max. (ns) 30 800


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    2n22192n2219abfx85bsw66a+10bsw67absw68absx32bsx59bsx612n40362n2219 transistoric 744bdx36bfx34 PDF

    transistor 2SC114

    Abstract: transistor BD400 BD109 2SC114 transistor transistor t08 usaf516es047m 2SC114 2SD155 L transistor 2Sd154 usaf517es060m
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t * - k IB H H TYPE No. MAX. 1 hFE II MIN. MAX PcT6TT ABSOiLOTE MAX. RATIINGS Ä25C


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    npn110pt6905apt6905bpt6905c+15100msa100m5amm2261mm2262mm2263transistor 2sc114transistor bd400bd1092sc114 transistortransistor t08usaf516es047m2sc1142sd155 ltransistor 2sd154usaf517es060m PDF

    75n07

    Abstract: BD106 oms 450 2SC22 2N2306 usaf516es047m bdy15 2N5925 2SC115 M06G
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    npn11075n07bd106oms 450+72sc222n2306usaf516es047mbdy152n59252sc115m06g PDF

    2SC114

    Abstract: transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 TQ59A transistor bdy88 BDY88 2SC109
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I


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    npn110pt6905apt6905bpt6905c+15100msa100m5amm2261mm2262mm22632sc114transistor 2sc114t0562sc114 transistortransistor t08transistor 2sc107tq59atransistor bdy88bdy882sc109 PDF

    BC107 equivalent transistors

    Abstract: 2n5401 equivalent BC557 equivalent 2N2907 equivalent 2n2905 replacement bc327 equivalent bc237 equivalent MPSa06 equivalent equivalent for BC337 bc327 replacement
    Contextual Info: Philips Semiconductors Small-signal Transistors DISCONTINUED TYPE Replacement list REASON FOR DELETION REMARKS 2N1613 Discontinued 2N1711 Discontinued 2N1893 Discontinued 2N2219 Discontinued 2N2219A Discontinued 2N2222/A Discontinued 2N2369/A Discontinued


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    2n16132n17112n18932n2219+162n2219a2n2222/a2n2369/a2n24842n29052n2905abc107 equivalent transistors2n5401 equivalentbc557 equivalent2n2907 equivalent2n2905 replacementbc327 equivalentbc237 equivalentmpsa06 equivalentequivalent for bc337bc327 replacement PDF