DD4237 Search Results

BY206

Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
Contextual Info: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter

TMP90CS39F

Abstract: P101C p7fr TLCS-90 AA423 TMP90CS38F TMP90CS38T 07241 IOPORT32 toshiba M12
Contextual Info: T O S H IB A TMP90CS38/S39 CMOS 8-BIT MICROCONTROLLER TMP90CS38F / TMP90CS38T TMP90CS39F /TMP90CS39T 1. OUTLINE AND CHARACTERISTICS T M P 9 0 C S3 8 is a high speed, hig h performance 8-bit m icrocontroller developed for application in the control of various devices.

Contextual Info: TOSHIBA TMP90PM38 CM O S 8-BIT M ICRO CO NTRO LLERS TM P90PM 38F / TM P90PM 38T 1. O UTLIN E AND CHARACTERISTICS The TM P90PM 38 is a system evaluation L S I h av in g a built in One-Time PROM for TM P90CM 38. A program m ing and verification for the in tern al PROM is achieved by u sin g a

g0424

Abstract: transistor B42 350
Contextual Info: bM2752S 00’ 23bb 35Ü H N E C E / / M OS IN TEG RA TED C IR C U IT JU P D 42S 16 1 7 0 ,4 2 S 1 7 1 7 0 ,4 2 S 1 8 1 7 0 16 M B IT D Y N A M IC RAM (FA S T PA G E M O D E & B Y T E W R IT E M ODE -PRELIMINARY-DESCRIPTIO N The NEC #PD42S16170, // PD42S17170 and ¿¿PD42S18170 are 1 048 576 words by 16 bits dynamic

8593t

Abstract: PSB8593 T7527 PSB RESISTORS psb8592
Contextual Info: SIEMENS AKTIENGESELLSCHAF S I E î> • Dual-Tone Multi-Frequency Generator Preliminary Data B 2 3 SbDS D 0 M 2 37 M bM5 « S I E G PSB 8592 PSB 8593 MOS 1C Type Ordering Code Package PSB 8592 PSB 8593 Q67100-Y956 Q67100-H8168 DIP 20 DIP 20 The DTMF generator PSB 8592/PSB 8593 is specially designed to implement a dual-tone telephone

b765

Abstract: CT-1106 1021 NAPC top260 74ACT11064
Contextual Info: 74A C /A C T 11064 4-2-3-2-lnput AND-OR-INVERT Gate I FEATURES Objective Specification • Output capability: ±24 mA • CMOS AC and TTL (ACT) voltage level inputs • 50ft incident wave switching SYMBOL C O N D ITIO N S T . = 25°C; G ND = 0V; PARAM ETER