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    BSW66 Search Results

    BSW66 Datasheets (25)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    BSW66
    Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF 56.06KB 1
    BSW66
    Philips Semiconductors NPN switching transistors Original PDF 52.06KB 8
    BSW66
    Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package Original PDF 10.79KB 1
    BSW66
    Mullard Quick Reference Guide 1977/78 Scan PDF 440.42KB 16
    BSW66
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 43.74KB 1
    BSW66
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 170.84KB 1
    BSW66
    Unknown Transistor Replacements Scan PDF 86.32KB 1
    BSW66
    Unknown Transistor Replacements Scan PDF 77.57KB 1
    BSW66
    Unknown Transistor Replacements Scan PDF 67.73KB 1
    BSW66
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 165.1KB 1
    BSW66
    Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF 77.88KB 1
    BSW66
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 121.14KB 1
    BSW66
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 99.71KB 1
    BSW66
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 403.06KB 4
    BSW66
    Unknown Shortform Electronic Component Datasheets Short Form PDF 63.14KB 1
    BSW66
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 108.33KB 1
    BSW66A
    Philips Semiconductors Programmable logic arrays (16 x 48 x 8) - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF 68.05KB 8
    BSW66A
    Philips Semiconductors NPN switching transistors - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF 52.05KB 8
    BSW66A
    Semelab Bipolar NPN Device in a Hermetically Sealed TO39 Metal Package - Pol=NPN / Pkg=TO39 / Vceo=100 / Ic=2 / Hfe=30min / fT(Hz)=130M / Pwr(W)=5 Original PDF 10.8KB 1
    BSW66A
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 55.23KB 1
    SF Impression Pixel

    BSW66 Price and Stock

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    O-Z Gedney GUBSW664A

    Box Junction Halo Alum; |Oz Gedney GUBSW664A
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    Newark GUBSW664A Bulk 1
    • 1 $1442.89
    • 10 $1282.57
    • 100 $1257.26
    • 1000 $1257.26
    • 10000 $1257.26
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    O-Z Gedney NGUBSW664A

    Junction Box; |Oz Gedney NGUBSW664A
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    Newark NGUBSW664A Bulk 1
    • 1 $4817.22
    • 10 $4451.36
    • 100 $4298.92
    • 1000 $4298.92
    • 10000 $4298.92
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    Philips Semiconductors BSW66A

    1000 MA, 100 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BSW66A 6
    • 1 $15.00
    • 10 $7.50
    • 100 $7.50
    • 1000 $7.50
    • 10000 $7.50
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    NXP Semiconductors BSW66A

    1000 MA, 100 V, NPN, SI, SMALL SIGNAL TRANSISTOR, TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components BSW66A 2
    • 1 $15.00
    • 10 $10.00
    • 100 $10.00
    • 1000 $10.00
    • 10000 $10.00
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    Central Semiconductor Corp BSW66A

    BIPOLAR NPN DEVICE IN A HERMETICALLY SEALED TO39 METAL PACKAGE Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, Metal, 3 Pin
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA BSW66A 278
    • 1 -
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    BSW66 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BSW66

    Contextual Info: BSW66 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)


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    bsw66o205ad1-aug-02 PDF

    Contextual Info: BSW66A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original
    bsw66ao205ad17-jul-02 PDF

    bsw66

    Contextual Info: BSW66 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)


    Original
    bsw66o205ad19-jun-02 PDF

    BSW68A 1990

    Abstract: bsw68a
    Contextual Info: N AMER PHILIPS/DISCRETE LTE D • bbS3^31 00273^1 bSfl B A P X l BSW66A to 68A SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK REFERENCE DATA BSW66A BSW67A BSW68A VCBO


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    bsw66absw67absw68aby206+1bsw68a 1990 PDF

    Contextual Info: BSW66A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original
    bsw66ao205ad19-jun-02 PDF

    BY206

    Abstract: 77655 BSW67A BSW68A 68A diode BY206 diode BSW66A 82S2 Silicon Epitaxial Planar Transistor philips k 68a
    Contextual Info: N AMER PHILIPS/DISCRETE L'ÌE D • 1^53^31 0027ÖT1 bSß B A P X BSW66A to 68A I SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors prim arily intended fo r general purpose industrial and switching applications. Q UICK REFERENCE D ATA BSW66A BSW67A BSW68A


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    bsw66absw67absw68a500ma+9bav10by2067z776s17765568a diodeby206 diode82s2silicon epitaxial planar transistor philipsk 68a PDF

    BU104

    Abstract: BSX21 BU103 8SS44
    Contextual Info: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o Description BS250CSM4 8SS44 BSS44 CECC BSS50 BSS51 BSS52 BSS60 BSS61 BSS62 BSS71 BSS72 BSS73 BSS74 BSS74R BSS75 BSS76 BSS77 BSS78 BSV15 BSV16 BSV17 BSV60 BSV64 BSV64 CECC BSV64-SM BSV91 BSW66 BSW66CECC


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    bs250csm48ss44bss44bss50+9bss51bss52bss60bss61bss62bss71bu104bsx21bu103 PDF

    data sheet BSW67A

    Abstract: BSW67A BP317 BSW66A BSW68A
    Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BSW66A; BSW67A; BSW68A NPN switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 05 Philips Semiconductors Product specification NPN switching transistors


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    m3d111bsw66absw67absw68a+5mam317sca54117047/00/02/pp8data sheet bsw67abp317 PDF

    BSW66A

    Contextual Info: BSW66A Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016)


    Original
    bsw66ao205ad1-aug-02 PDF

    BSW68A

    Abstract: BSW67A BSW66A
    Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


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    bsw66absw67absw68amam317 PDF

    bsw66

    Contextual Info: BSW66 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 100V 0.41 (0.016) 0.53 (0.021)


    Original
    bsw66o205ad17-jul-02 PDF

    BY206

    Abstract: BSW68A k 68a BSW67A BSW66A Silicon Epitaxial Planar Transistor philips silicon planar epitaxial transistors Philips 1990 LG 68A
    Contextual Info: BSW66A to 68A PHILIPS INTERNATIONAL 5bE D m 711002b DD4237Ö bS4 HIPHIN SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors primarily intended for general purpose industrial and switching applications. QUICK R EFER EN C E DATA BSW66A BSW67A BSW68A Collector-base voltage open emitter


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    bsw66a711002bdd4237bsw67a+9bsw68a711qa2bq0m53b5by206k 68asilicon epitaxial planar transistor philipssilicon planar epitaxial transistorsphilips 1990lg 68a PDF

    BSW66A

    Contextual Info: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 100.0 V NO. BSW66A Voltage, Collector to Emitter (VCE) 100.0 V TYPE NPN Voltage, Emitter to Base (VEBO) 6.0 V empty empty Collector Current (IC) 2.0 A empty empty A CASE TO-39 5.0


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    bsw66a PDF

    BSW66A

    Abstract: bsw67a BSW63A bsw68a
    Contextual Info: Philips Semiconductors Product specification NPN switching transistors BSW66A; BSW67A; BSW68A FEATURES PINNING • High current max. 1 A PIN • High voltage (max. 150 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • General purpose switching and amplification


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    bsw66absw67absw68absw68e+1bsw63a PDF

    2sa648 transistor

    Abstract: usaf516es047m STC5204 usaf517es060m 2SA614 ST9001 usaf516es048m STC5610 st*5519 BD538
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    npn110pt6905apt6905bpt6905c+15100msa100m5amm2261mm2262mm22632sa648 transistorusaf516es047mstc5204usaf517es060m2sa614st9001usaf516es048mstc5610st*5519bd538 PDF

    2SC114 transistor

    Abstract: transistor 2SC114 2SC114 BSS43 D28A9 FZJ 101 FZJ 131 VX3866 MHT5001 usaf516es047m
    Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T


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    npn110pt6905apt6905bpt6905c+15100msa100m5amm2261mm2262mm22632sc114 transistortransistor 2sc1142sc114bss43d28a9fzj 101fzj 131vx3866mht5001usaf516es047m PDF

    KT601

    Abstract: 2SC1708 2SC2675 kt601am 2SC2089BL KT601A 2SC3328Y LOW-POWER SILICON NPN SM-150 diode 2SC1627Y
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 >= 20 2S0438 2S0875 2SC3359 2SC3359 2SC1198K 2S01782K A 2S01782K (A) 2SC2061 ~~~~ ~ t~~ ~~g~~~~ 25 30 Rohm Corp Rohm Corp Rohm Co Ltd Indust Mexi NECElecslnc NEC Corp JA Sanken Elec Rohm Co Ltd ~anyo E!ect


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    2sc2868ys18382sc1627y2sc1627a-y+132sc2882y2n29402sc3328ybft392sc2003lkt6012sc17082sc2675kt601am2sc2089blkt601alow-power silicon npnsm-150 diode PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    od-80od-323ot-23ot-89+13ot-143ot-223ot-323triac 97a6s0805bh13003 transistor to220 equivalenttriacs bt 804 600vtriac bt 808 600cdiode sot-23 marking 15dzener diode 1n ph 486bs smd transistorz0409mf equivalentbt 808 600c PDF

    BDV56

    Abstract: BDV57 2N3055 TIPL777 BUS11A cv9936 BUX11 2N6033
    Contextual Info: un itti IMI Semelab Mil / Aerospace Division CECC 5 0 0 0 0 QUALIFIED PRODUCT SEM ELAB has one of the largest ranges of C E C C approved power products in Europe. These products have undergone approval to support both new application requirem ents and also existing and “old”


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    2n22182n2218a2n22192n2219a+142n29132n29142n29152n29162n29172n2918bdv56bdv572n3055tipl777bus11acv9936bux112n6033 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


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    trans-611dt15212n2270bc107-182ks+16esc182kasesc182kbsesc1q8-183kseic183kbs8c183kcsbc109-184ksal102 ates2n2222a mpskr206ad149tis58tis88sft3532n24312n4265bfy29 PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8 PDF

    Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


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    2n656a2n657a2n6962n697a+62n6982n699b2n10532n11162n11172n1118 PDF

    Contextual Info: Small signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION v CBO v CEO v EBO (V) (V) (V) *VCER •cao CnA> h HE VCBO (V) ® lc ® V GE VCE(SA T ) ® k ; *T (IDA) (m A) (M iz) (V) 00 U ce o NF (pF) •on (n«> *off (ns> (dB) *TYP *TYP •TYP *TYP


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    bfx86bfx87bfx88bfx98+6bfy50bfy51bfy52bfy55bfy56abfy57 PDF

    BSW65

    Abstract: BSV12 BSW66 BSS46 BFX98 BFY64 BFX86 BFX87 BFX88 BFY50
    Contextual Info: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) *ICEO *ICES *ICEV *ICER hFE @ IC @ VCE VCE (SAT ) @ IC fT (mA) (V) (V) (mA) (MHz) Cob (pF) ton (ns) toff (ns) (dB) *TYP *TYP


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    bfx86bfx87bfx88bsx64+11bsx95bsx96bsy34bsy51bsw65bsv12bsw66bss46bfx98bfy64bfy50 PDF