11DQ06 Search Results

G6G3

Contextual Info:
SENSITRON SEMICONDUCTOR 11DQ05-G  11DQ06-G Green Products
Technical Data Data Sheet 3352, Rev. A

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Contextual Info: BL GALAXY ELECTRICAL SCHOTTKY BARRIER RECTIFIER 11DQ06 VOLTAGE RANGE: 60 V CURRENT: 1.0 A FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses DO - 41 High surge capability For use in low voltage,high frequency inverters free

11DQ06

Contextual Info: SBD Type :11DQ06 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 30 Volts thru 100 Volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage

11DQ05

Abstract: 11DQ06 DO-204AL
Contextual Info: 2002-02-01 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-220-72 11DQ05 sch diodDO-41 70-220-80 11DQ06 sch diodDO-41 Bulletin PD-2.288 rev. B 05/00 11DQ05 11DQ06 SCHOTTKY RECTIFIER

Contextual Info: SCHOTTKY BARRIER DIODE 11DQ05 11DQ06 1.1A/50— 60V FEATURES “ Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available ° 52mm Inside Tape Spacing Package Available

11DQ05

Abstract: 11DQ06 DO-204AL
Contextual Info: PD-2.288 rev. A 12/97 11DQ05 11DQ06 SCHOTTKY RECTIFIER 1.1 Amp Description/Features Major Ratings and Characteristics Characteristics 11DQ. Units I F AV Rectangular waveform 1.1 A VRRM The 11DQ. axial leaded Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage.

Solitron J775-2

Abstract: BT196 SS14 TOSHIBA 1n5822 TOSHIBA SS550 BT127 SE140 NSR8140S NBS25-400 1N4007 toshiba
Contextual Info: CROSS REFERENCE INDUSTRIAL R u t No. 10D05 iœ i îœ i 10D2 1 302 im 1004 10D4 10D6 10 6 IO » im 11DQ03 11DQ04 11DQ05 11DQ06 15B4B41 15D4B41 15G4B41 15J4B41 1B4B42 im a im o naco in n o 1G4B42 lHi 117 1BB 1J4B42 1*1217 1*12171 1K1217B 1N1218 1K1218A 1*12188

11DQ05

Abstract: 11DQ06 DO-204AL
Contextual Info: Bulletin PD-2.288 rev. D 03/02 11DQ05 11DQ06 SCHOTTKY RECTIFIER 1.1 Amp Description/ Features Major Ratings and Characteristics Characteristics 11DQ. Units IF AV Rectangular 1.1 A 50/60 V waveform VRRM The 11DQ. axial leaded Schottky rectifier has been optimized

Contextual Info: 60 Volts 1A Avg. 11DQ06 SBD •最大定格 Maximum Ratings ■OUTLINE DRAWING mm Item Symbol Conditions Unit く り 返 し ピ ー ク 逆 電 圧 Repetitive Peak Reverse Voltage 非 く り 返 し ピ ー ク 逆 電 圧 Non-repetitive Peak Reverse Voltage

Contextual Info: Bulletin PD-2.288 rev. F 11/04 11DQ05 11DQ06 SCHOTTKY RECTIFIER 1.1 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular waveform 1.1 A 50/60 V IFSM @ tp = 5 µs sine 150 A VF @ 1 Apk, TJ = 125°C 0.53

11DQ05

Abstract: 11DQ06
Contextual Info:
SENSITRON SEMICONDUCTOR 11DQ05  11DQ06
Technical Data Data Sheet 2851, Rev. -



  


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11DQ05

Abstract: 11DQ06 DO-204AL
Contextual Info: Bulletin PD-2.288 rev. F 11/04 11DQ05 11DQ06 SCHOTTKY RECTIFIER 1.1 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular waveform 1.1 A 50/60 V IFSM @ tp = 5 µs sine 150 A VF @ 1 Apk, TJ = 125°C 0.53

11DQ05

Abstract: 11DQ06 DO-204AL
Contextual Info: Bulletin PD-2.288 rev. B 05/00 11DQ05 11DQ06 SCHOTTKY RECTIFIER 1.1 Amp Major Ratings and Characteristics Description/Features Characteristics 11DQ. Units I F AV Rectangular waveform 1.1 A 50/60 V VRRM The 11DQ. axial leaded Schottky rectifier has been optimized

Contextual Info: 11DQ05 - 11DQ06 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 50 - 60 Volts IO : 1.1 Ampere DO - 41 FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Low cost 1.00 25.4

Contextual Info: VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy

VS-11DQ05TR

Abstract: 11DQ06TR VS-11DQ06TR
Contextual Info: VS-11DQ05, VS-11DQ05-M3, VS-11DQ06, VS-11DQ06-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation Cathode Anode • Very low forward voltage drop • High purity, high temperature epoxy

Contextual Info: SBD Type :11DQ06 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage

11DQ06 equivalent

Abstract: 11DQ06
Contextual Info: SBD Type :11DQ06 OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Power Loss, High Efficiency * High Surge Capability * 40 Volts thru 100 Volts Types Available * 52mm Inside Tape Spacing Package Available Maximum Ratings Rating Repetitive Peak Reverse Voltage

Contextual Info: 11DQ05/11DQ06 Vishay High Power Products Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline RoHS • High frequency operation COMPLIANT • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for

11DQ05

Abstract: 11DQ06 DO-204AL
Contextual Info: Bulletin PD-2.288 rev. F 11/04 11DQ05 11DQ06 SCHOTTKY RECTIFIER 1.1 Amp Description/ Features Major Ratings and Characteristics Characteristics Values Units IF AV Rectangular waveform 1.1 A 50/60 V IFSM @ tp = 5 µs sine 150 A VF @ 1 Apk, TJ = 125°C 0.53

Contextual Info:
SENSITRON SEMICONDUCTOR 11DQ05  11DQ06
Technical Data Data Sheet 2851, Rev. -



  


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11DQ05

Abstract: 11DQ06 DO-204AL
Contextual Info: 11DQ05, 11DQ06 Vishay High Power Products Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

Contextual Info: 11DQ06 Diodes General Purpose Schottky Rectifier Military/High-RelN I O Max.(A) Output Current1.1 @Temp (øC) (Test Condition)40’ V(RRM)(V) Rep.Pk.Rev. Voltage60 I(FSM) Max.(A) Pk.Fwd.Sur.Cur.26 V(FM) Max.(V) Forward Voltage790m @I(FM) (A) (Test Condition)1.1

Contextual Info: 11DQ05, 11DQ06 Vishay High Power Products Schottky Rectifier, 1.1 A FEATURES • Low profile, axial leaded outline • High frequency operation • Very low forward voltage drop Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance