BTW42 Search Results

BTW42-600R

Abstract: TSM 1250 1000R mml 600 600R BTW38 BTW42 BTW42-600RC
Contextual Info: PHILIPS bSE D INTERNA TI ON AL Jl B 711Dfl2b DDb5431 3TD • P H I N BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase

BTW42

Abstract: BTW42-600RC 800R BTW38 BTW42-600R
Contextual Info: N AUER PHILIPS/DISCRETE ^53^31 b'lE J> Q0273bb 'H ß H A P X BTW42 SERIES L THYRISTORS Glass-passivated silico n th y ris to rs in metal envelopes w ith high d V [ j/ d t capabilities. T he y are Intended fo r use in pow er c o n tro l c irc u its and sw itching systems w here high transients can occur e.g. phase

BTW42

Abstract: BTW42-600R
Contextual Info: L.5E D P H I L IP S I N T E R N A T I O N A L B 7 1 1 D ä 2 b DGt.5431 3TD • P H I N Jl BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V p /d t capabilities. They are intended fo r use in power control circuits and switching systems where high transients can occur e.g. phase

BTW38

Abstract: 600R 800R BTW42 BTW42-600R BTW42-600RC 1000R tsm 1250
Contextual Info: N AMER PHILIPS/DISCRETE bRE D • ^53^31 0DE73bb ■ APX BTW42 SERIES L THYRISTORS Glass-passivated silico n th y ris to rs in m etal envelopes w ith high d V [ j/ d t capabilities. T hey are intended fo r use in p ow er c o n tro l circ u its and sw itch in g systems where high transients can occur e.g. phase

Contextual Info: _M_ N AMER PHILIPS/DISCRETE btiSBTBl 0011=143 T • QbE D I BTW42 SERIES THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high d V ^ /d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur (e.g. phase

TSM 1250

Abstract: BTW42 BTW38 800R BTW42-600R BTW42-600RC IEC134
Contextual Info: fcjbS3c131 QDll':i43 T ObE D N AMER PHI LIPS/ DI SC RE TE BTW42 SERIES ^T~-ar-/£~ THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high dVp/dt capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase

BTW42-600R

Abstract: 600R 800R BTW38 BTW42 BTW42-600RC IEC134
Contextual Info: N AMER PH ILI PS/DIS CRET E bbSBTBl O Q i n 43 T ObE D BTW42 SERIES KJlzAIsJf' THYRISTORS Glass-passivated silicon thyristors in metal envelopes with high dVp/dt capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

aeg t15

Abstract: N800COB TAG740-200.800 ST018S08P bty91 800r S2014NH SKT16F08DU 1N800COC T12N800COB t7n800
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VDRM V IT Max (A) ITSM (A) lOT Max (A) VOT Max (V) IDRM dv/dt (A) (V/UB) to Operating Temperature Max (8) (OC) Min Max Package Style SeRs, VDRM >= 800 V (Co nt' d) 5 10 15 20 T10N800UOF BT152-800

TYNB12

Abstract: bstd1053m S1612NH tynb10 BStD1053 BSTC1053 BT151-BOOR s1210nh CR10C16 GGG 64
Contextual Info: SILICON CONTROLLED RECTIFIERS Item Number Part Number Manufacturer VDRM IT Max ITSM lOT Max VOT Max IDRM dv/dt V (A) (A) (A) (V) (A) (V/us) to Max (s) Operating Temperature ee) Min Max Package Style SeRs, VDRM >= 800 V (Co nt' d) 5 10 TXS607 -8 (A) TXS606-B (A)

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

THERMISTORS nsp 037

Abstract: Thyristor TAG 9118 ICA 0726 0148 Transformer a1273 y k transistor AM97C11CN transistor SK A1104 PM7A2Q B8708 bzy79 yh 5032
Contextual Info: INDEX OF COMPONENTS A Section/Page No. A.C. Adaptor. Adaptor Kits BNC e tc . Adhesive Tapes. Adhesives, Various. Aerosols.

OT239

Abstract: BT100a 02 CQX82A TRIO TA 80W CV7351 ZP1481 CV2154 ZP1430 triac mw 151 500r PL5727
Contextual Info: Milliard quick reference guide 1978/79 — discrete semiconductors — passive components — valves and tubes This guide gives quick reference data on Mullard electronic components. The information is deliberately abbreviated to give a rapid appreciation of salient characteristics, and to

BGY41

Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.

BT145-500R

Abstract: PHILIPS BT152-400R BTW38-600R 400v 50A Transistor BT148-400R SOT-186 600RU BTW38-600RU 600v BTW38
Contextual Info: N AMER PHILIPS/DISCRETE 30 BSE D • b b S B ' m GOlbSQÖ 5 ■ T -Z S '-O l Power Devices GENERAL PURPOSE THYRISTORS in order of current rating PACKAGE OUTLINE AVERAGE ON-STATE CURRENT fT(RMS)m a x - lT (A V )m a x .< l> 2N5064 BT169B D E G TO-92 0.8A TO-92

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI

Contextual Info: N AUER PHILIPS/DISCRETE bb53^31 0D273bb 'Hfl • APX b'lE J> I B T W 4 2 SERIES _ THYRISTORS Glass-passivated silicon thyristors in metal envelopes w ith high d V [j/d t capabilities. They are intended for use in power control circuits and switching systems where high transients can occur e.g. phase

APY12

Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP

TXD10K40

Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40