00B33 Search Results

431202036640 choke

Abstract: CEF 83 A 3 BLW85 ZL18 blw85 transistor test circuit
Contextual Info: PHILIPS INTERN A T I O N A L L.5E D 711Dfi2ti 00b33>4b Ô3Û • PHIN ■ I BLW85 _ A _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V . The transistor is resistance stabilized and

43120203664

Abstract: BLW83 PHILIPS 4312 amplifier 431202036640 choke BY206 philips carbon film resistor
Contextual Info: bSE V m 7110&Eb □□b332*ì 75^ BiPHIN BLW83 _PHILIPS INTERNATIONAL_ ^ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transm itting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V. The transistor is specified fo r s.s.b. applications as linear

Contextual Info: The ARM Processor Family This Data Sheet is one of a series describing the ARM Family of products from GEC Plessey Semiconductors. The table below shows the current range of 32-bit RISC M icroprocessors/M icrocontrollers. GPS Name P ackag e Description 32 bit RISC core with 32 bit address range.

Contextual Info: HS- 82 C 54 RH S ttftsras Radiation Hardened CMOS Programmable Interval Timer August 1995 Features Pinouts • Radiation Hardened 24 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP MIL-STD-1835 CDIP2-T24 TOP VIEW - Total Dose > 1 0 5 RAD (Si) - Transient Upset > 10 RAD (Si)/sec

sda 5241

Abstract: SDA5241 s0003
Contextual Info: SIEM ENS Data Slicer for Teletext SDA 5231-5 Preliminary Data Bipolar IC Features • Crystal-stable data clock regeneration for a bit rate Of 6.9375 MHz • Separation and regeneration of teletext information • Separation of the horizontal and vertical synchroni­

3T160

Abstract: ORP10 NT80
Contextual Info: 3. 3.1 ELECTRICAL CHARACTERISTICS UPD70335-8, 70335-10 Absolute maxi m u m ratings Pa r a m e t e r Ta=25°C Symbol Test c o n d i t i o n Ratings Unit V DD -0.5 to +7.0 V V TH -0.5 to Vpju+0.5 V VI -0.5 to V D D +0.5 V vO -0.5 to Vjjjj+0.5 V P ower suppl y v o l t a g e

BLW90

Abstract: fi37
Contextual Info: bSE ]> El 7110ñSb DDb33ñ7 350 « P H I N BLW90 _ PHILIPS INTERNATIONAL _^ U.H.F. P O W E R T R A N SIST O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

BLW81

Abstract: IEC134 Vrr-12 philips 2222 807 trimmer philips 2222 808 trimmer
Contextual Info: PHILIPS INTERNATIONAL bSE ]> • 711002b DD b3 3S l 4bö ■ PHIN BLW81 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for nominal supply voltages up to 13,5 V.

KCC CL-10

Abstract: fprog fprog II SDA2586-5 Q67100-H5101 0b3307
Contextual Info: SIEM EN S Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586-5 Preliminary Data MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V

BLW79

Abstract: transistor d 1933 IEC134 L6ss Transistor D 798 33640
Contextual Info: PHILIPS INTERNATIONAL bSE 7110Ö5 T> DGt.33DS 215 J PHIN BLW79 U.H.F. POWER TRANSISTOR N-P-N s ilic o n planar e p ita x ia l tra n sisto r intended fo r tra n sm ittin g ap p lic a tio n s in class-A, B o r C in the u.h.f. and v.h.f. range fo r nom inal su p p ly voltages up to 13,5 V . T h e resistance s ta b iliza tio n o f the

Contextual Info: HS-2510RH HARRIS S E M I C O N D U C T O R Radiation Hardened High Slew Rate Operational Amplifiers August 1995 Features Description High Slew Rate 50V/ns Min , 65V/(is (Typ) • The HS-2510RH is a radiation hardened high performance operational amplifier which set the standard for maximum

Contextual Info: HS-82C 55A R H S ttftis s s Radiation Hardened CMOS Programmable Peripheral Interface September 1995 Features Pinout • Radiation Hardened 40 LEAD CERAM IC DUAL-IN-LINE METAL SEAL PACKAGE SBDIP M IL-STD-1835 CDIP2-T40 TOP VIEW - Total Dose >105 RAD (Si)

HS3516

Abstract: HS3516RH HS-3516RH HS9-3516RH8 HS9-3516
Contextual Info: S3 H ^ ^*0'^ August 1995 S - 3 5 1 6 R H High Slew Rate, Wideband, Radiation Hardened, Operational Amplifier Pinout Features • Radiation Environment 14 LEAD CERAMIC FRIT SEAL CERPACK PACKAGE CERPACK MIL-STD-1835 GDFP5-F14 - Gamma Rate (y) 1 x 109 RAD (Si)/s

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21334-2E ASSP Dual Serial Input PLL Frequency Synthesizer MB15F03 • DESCRIPTION The Fujitsu MB15F03 is a serial input Phase Locked Loop PLL frequency synthesizer with a 2.0GHz and a500MHz prescalers. A 64/65 or a 128/129 for the 2.0GHz prescaler, and a 16/17 or a 32/33 for 500MHz prescaler can be

Contextual Info: SIEMENS Nonvolatile Memory 8-Kbit E2PROM with I 2C Bus Interface SDA 2586-5 Preliminary Data MOS 1C Features • Word-organized, reprogrammable nonvolatile memory in n-channel floating-gate technology E2PROM • 1024 x 8-bit organization • Supply voltage 5 V

hs138

Contextual Info: L j A Q E HS-302RH/883S, HS-303RH/883S, HS-306RH/883S, HS-307RH/883S, HS-384RH/883S, HS-390RH/883S p i e Radiation Hardened CMOS Analog Switches September 1995 Features Description • This Circuit is Processed in Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of

Contextual Info: 3.3V CMOS OCTAL TRANSPARENT LATCHES IDT54/74FCT3573/A ADVANCE INFORMATION In te g ra te d D e v ic e T e c h n o lo g y , Inc. FEATURES: DESCRIPTION: • 0.5 MICRON CMOS Technology • ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model C = 200pF, R = 0

blw86

Abstract: ferroxcube wideband hf choke BY206
Contextual Info: m b5E » 711002b 0Db33Sû SST « P H I N BLW86 _PHILIPS INTERNATIONAL_ j H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, AB and B operated h.f. and v.h.f. transmitters w ith a nominal supply voltage o f 28 V. The transistor is resistance stabilized and is

BLW89

Abstract: philips resistor CR37 blw89 transistor CR37
Contextual Info: PHILIPS INTERNATIONAL bSE D 711002 D 0 b 3 3 7 ,:î 2öM PHIN B LW 89 U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and

QML-38535

Abstract: smd marking A26 SCO16-1 N196 qml38535 D966
Contextual Info: REVISIONS LTR DESCRIPTIO N DATE YR-M O-DA APPROVED R EV SHEET R EV 16 17 R EV STATUS O F SHEETS PMIC N/A 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 1 2 3 4 5 6 7 8 9 10 11 12 REV SHEET PREPARED BY Thom as M. Hess STANDARD MICROCIRCUIT DRAWING TH IS DRAW ING IS AV AILAB LE

slo syn HS 50

Contextual Info: £ S h iA R R HS-82C85RH IS S E M I C O N D U C T O R Radiation Hardened CMOS Static Clock Controller/Generator August 1995 Features Pinouts • Radiation Hardened - Total Dose > 105 RAD Si) - Transient Upset > 108 RAD (Si)/s - Latch Up Free EPI-CMOS • Very Low Power Consumption

transistor tt 2222

Abstract: MH-1993 BLW80 J2251 TT 2222 IEC134
Contextual Info: PHILIPS INTERNATIONAL bSE D • 711005b 0DL3313 3R1 ■ PHIN BLW80 A U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r transm itting applications in class-A, B o r C in the u.h.f. and v.h.f. range fo r nominal supply voltages up to 13,5 V.

bc 331

Abstract: siemens sda
Contextual Info: S IE M E N S Nonvolatile Memory 2-Kbit E2PROM with l 2C Bus and 2 K Write Protection SDA 3526-5 Preliminary Data M O S IC Features • • • • • • • • • • W ord-organized programm able nonvolatile memory in n-channel floating-gate technology E 2PROM

transistor tt 2222

Abstract: TT 2222 npn vp10lp BLW87 sot 123 transistor L6
Contextual Info: PHILIPS INTERNATIONAL bSE J> • 711DÖ2ti DGb3371 1 ^ 3 ■I P H I N BLW87 J V _ V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 13,5 V. The transistor is resistance stabilized and is