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Contextual Info: bbSBRBl D O E n Q l 101 • APX Philips Sem iconductors Prelim inary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b^E » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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BLF221
Abstract: mc9808 2222 379 itt 2222 philips catalog potentiometer TRANSISTOR 237N UBA379 cw 237 philips resistor 2322 151 Philips 2222 78
Contextual Info: bbSB^Bli □ 0 5 T 6 C1B 3 7 e! Philips Semiconductors APX Product specification HF/VHF power MOS transistor BLF221 N AUER P H I L I P S / D I S C R E T E FEATURES b^E PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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blf221o-39/3wcbb05uba379+9mcb304mc98082222 379itt 2222philips catalog potentiometertransistor 237ncw 237philips resistor 2322 151philips 2222 78
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transistor tt 2222
Abstract: TT 2222 os TT 2222 LM 2222 transistor tt 2222 vertical BLf221 2222-581 BH RV transistor BLF221B OP03
Contextual Info: Preliminary »pacification Philips Semiconductors HF/VHF power MOS transistor PHILIPS INTERNATIONAL FEATURES BLF221B SbE D • 7110fl5b 0DM37Mel 37M HIPHIN PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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blf221b7110fl5b0dm37mel004375b+9transistor tt 2222tt 2222os tt 2222lm 2222transistor tt 2222 verticalblf2212222-581bh rv transistorop03
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uc3807
Abstract: BLF221 71005 TRANSISTOR 237N BLF221 application International Power Sources VHF transmitter circuit philips resistor 2322 potentiometer 5k PHILIPS 2322
Contextual Info: Philips Semiconductors Product specification HF/VHF power MOS transistor BLF221 SbE D PHILIPS INTERNATIONAL 7110ö5b 004374D 147 « P H I N T-3 FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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blf221o-39/3004374dmsb009-+12mb8072mu711dfl2bmc9804uc380771005transistor 237nblf221 applicationinternational power sourcesvhf transmitter circuitphilips resistor 2322potentiometer 5kphilips 2322
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Contextual Info: Philips Semiconductors Preliminary »pacification T HF/VHF power MOS transistor PHILIPS INT ER NATIONAL FEATURES - 3 V - 0 5 BLF221B 5bE P • 7110fl5b □ D M 3 7 4 el 37M H P H I N PIN CONFIGURATION • High power gain • Easy power control • Gold metallization
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Contextual Info: BLF221B Transistors N-Channel UHF/Microwave MOSFET V BR DSS (V)40 V(BR)GSS (V)20 I(D) Max. (A)1.0 P(D) Max. (W)7.4# Maximum Operating Temp (øC)200õ I(DSS) Min. (A) I(DSS) Max. (A)10u @V(DS) (V) (Test Condition)12.5 @Temp (øC) (Test Condition)25 g(fs) Min. (S) Trans. conduct.80m
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HF 331 transistor
Abstract: BLF221
Contextual Info: bbsaiai Philips Semiconductors doerbib 3 7 ^ apx Product specification HF/VHF power MOS transistor BLF221 b^E T> N AUER PHILIPS/DISCRETE FEATURES PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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2322151
Abstract: M8807 philips 2222 115 13102 BLF221B URA310 philips resistor 2322 BLF221
Contextual Info: tjbS3R31 Philips Sem iconductors OQE^Ql 101 MAPX Preliminary specification HF/VHF power MOS transistor BLF221B N AMER PHILIPS/DISCRETE FEATURES b=JE » PIN CONFIGURATION • High power gain • Easy power control • Gold metallization • Good thermal stability
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bbs3t31blf221bmsb009-mba379+6ura3102322151m8807philips 2222 115 13102philips resistor 2322blf221
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bf0262a
Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A
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1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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sc08btransistor f6 13003equivalent transistor bj 131-6transistor eb 13003 bm+7bb112smd transistor code marking 2f 6na1211 lgcqy58bu705transistor 131-6 bj 026philips om350
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SOT123 Package
Abstract: SOT123 SOT-123 BFS22A SOT121 Package BFQ43 BFQ43 datasheet BLY93 BLX15 bfq34 application note
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET Selection guide RF Power Transistors for HF and VHF 1995 Nov 21 File under Discrete Semiconductors, SC08a Philips Semiconductors RF Power Transistors for HF and VHF Selection guide INTRODUCTION The following tables represent our complete range of bipolar and MOS transmitting transistors, grouped according to the
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sc08ablv10ot123bly87c/01+11scd45sot123 packagesot123sot-123bfs22asot121 packagebfq43bfq43 datasheetbly93blx15bfq34 application note
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BLY32
Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier
Contextual Info: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors
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om3016om3026om925om975+14om976bfq231bfq231abfq251bly32blf278 108 amplifierphilips application blx15rf power amplifiersbgy55blw95blf543bfq43blw33blf177 108 amplifier
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Zener Diode 3v 400mW
Abstract: transistor bc548b BC107 transistor TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DIAC OB3 DIAC Br100 74HCT IC family spec TRANSISTOR mosfet BF998
Contextual Info: INDEX Order Code Description Page Number – Philips Semiconductors 1 485-068 DS750 Development Kit 1 527-749 87C750 Hardware Kit 1 – Philips Semiconductors Data Communications UART Product Line 2 790-590 80C51 In a Box 3 – 80C51 Family Features 3 –
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ds75087c75080c51pz3032-12a44+15buk101-50gsbuw12afbu2520af16khzby328zener diode 3v 400mwtransistor bc548bbc107 transistortransistor bc108bc547 cross reference charttransistor bc109diac ob3diac br10074hct ic family spectransistor mosfet bf998
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MTP50N05E
Abstract: MTP25N10E MTP50N05 MTP40N06M MTP50N05EL SOT-123 MTP25N06L MTP40N06EL MTP25N05 MTP25N10
Contextual Info: - 290 - X£ §y € Vd s or Vd g Vg s % V (V) ±20 ±15 ±20 ±20 ±15 *± * MOT MOT MOT MOT MOT N N N MTP25N10 MTP25N10E MTP30N05E MOT MOT MOT N N N 100 ± 2 0 100 ± 2 0 50 ± 2 0 MTP3ÛNÛ6EL MTP30N08M MTP35NÛ6E MTP36NÛ6E MTP40N05E MTP40N06EL MTP40N06M
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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ba220ba221ba223ba281+16ba314ba315ba316ba317ba318ba423fet bfw10kp101afet bfw11bdx38kpz20gcqy58abfw10 fetrpw100b0943of fet bfw11
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sot123 package
Abstract: BLF543 BLF221 sot 123 blf246b flange SOT-123
Contextual Info: 65 RF/Microwave Devices RF Power MOS Transistors cont. Type No. Package Outline Load Power (W) V DS (V) f (MHz) Source Gain (dB) 28 28 28 28 28 50 28 28 50 28 50 28 50 28 50 175 175 175 175 175 108 175 108 108 108 108 175 108 175 108 14 typ 13 13 13 14 19 typ
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Contextual Info: Concise Catalogue 1996 Philips Semiconductors DISCRETE SEMICONDUCTORS RF power transistors RF & MICROWAVE SEMICONDUCTORS & MODULES RF POWER MOS TRANSISTORS type number PL PEP ^DS (W) (V) G p (dB) package 20.1) 23 20.1) 17 20 SOT123 SOT 123 SOT121 SOT121
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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