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    2N02L Search Results

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    Glenair Inc M85049/3712N02L

    - Bulk (Alt: M85049/3712N02L)
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    Avnet Americas M85049/3712N02L Bulk 3 Weeks 1
    • 1 $638.87
    • 10 $368.72
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    Newark M85049/3712N02L Bulk 1
    • 1 $590.88
    • 10 $368.30
    • 100 $254.61
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    Interstate Connecting Components M85049/3712N02L
    • 1 $766.64
    • 10 $419.74
    • 100 $211.98
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    FDH Electronics M85049/3712N02L 1
    • 1 $871.18
    • 10 $725.99
    • 100 $704.63
    • 1000 $656.37
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    SMC Corporation of America G46-P2-N02-L-C2-X30

    AIR PRESSURE GAUGE, 1/4 NPT, CLEAR COVER, 0 TO 30 PSI, 57MM DIAMETER, G SERIES
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    RS G46-P2-N02-L-C2-X30 Bulk 1 1
    • 1 $135.25
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    SMC Corporation of America VH312-N02-L

    HAND VALVE, 1/4NPT, VH SERIES
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    RS VH312-N02-L Bulk 5 Weeks 1
    • 1 $55.30
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    SMC Corporation of America VH402-N02-L

    HAND VALVE, 1/4NPT, VH SERIES
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    RS VH402-N02-L Bulk 5 Weeks 1
    • 1 $69.25
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    SMC Corporation of America VH322-N02-L

    HAND VALVE, 1/4NPT, VH SERIES
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    RS VH322-N02-L Bulk 5 Weeks 1
    • 1 $55.30
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    2N02L Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    92152

    Abstract: 2N02L
    Contextual Info: Order this data sheet by MMFT2N02ELT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N-Channel Enhancem ent Mode Silicon G ate TMOS E-FET SOT-223 for Surface Mount M MFT2N02ELT1 Motorola Preferred Device This advanced E-FET is a TMOS Medium Power MOSFET designed


    OCR Scan
    mmft2n02elt1/dot-2232phx33463f-092152+12n02l PDF

    2N02l

    Abstract: 2N02 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 MMFT2N02ELT3 SMD310
    Contextual Info: MOTOROLA Order this document by MMFT2N02EL/D SEMICONDUCTOR TECHNICAL DATA Medium Power Field Effect Transistor N–Channel Enhancement Mode Silicon Gate TMOS E–FETt MMFT2N02EL Motorola Preferred Device SOT–223 for Surface Mount This advanced E–FET is a TMOS Medium Power MOSFET


    Original
    mmft2n02el/dmmft2n02el2n02l2n02+52n3904an569mmft2n02elt1mmft2n02elt3smd310 PDF

    Power logic MOSFET SOT-223

    Abstract: 2N02l 1000 watts ups circuit diagram dc marking code dpak sot-223 code marking 2N3904 AN569 MMFT2N02EL MMFT2N02ELT1 SMD310
    Contextual Info: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N−Channel SOT−223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new


    Original
    mmft2n02elot-223mmft2n02el/dpower logic mosfet sot-223+82n02l1000 watts ups circuit diagramdc marking code dpaksot-223 code marking2n3904an569mmft2n02elt1smd310 PDF

    E3P102

    Abstract: T2-955V e6n02 t9n10e DL135 1086v l1n06c 24 v DC relay 34.51.7 d3n03 20n06hl
    Contextual Info: DL135/D Rev. 7, Apr-2001 Power MOSFETs Power MOSFETs DL135/D Rev. 7, Apr–2001  SCILLC, 2001 Previous Edition  1996 “All Rights Reserved” EZFET, MiniMOS & SMARTDISCRETES are trademarks of Semiconductor Components Industries, LLC SCILLC . ChipFET is a trademark of Vishay Siliconix.


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    dl135/dapr-2001r14525dld601+10e3p102t2-955ve6n02t9n10edl1351086vl1n06c24 v dc relay 34.51.7d3n0320n06hl PDF

    2N02L

    Abstract: MMFT2N02EL MMFT2N02ELT1 AN569
    Contextual Info: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new


    Original
    mmft2n02elr14525mmft2n02el/d2n02l+2mmft2n02elt1an569 PDF

    zt751

    Abstract: 3055L 2955E 3055e SP19A zta96 2N02L marking 651 sot223
    Contextual Info: SOT-223 DEVICES continued Plastic-Encapsulated High-Voltage Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector h hFE Device Marking V (BR)CEO Min SP19A P1D BF720 SP20A 350 300 250 250 40 40 50 40 ZTA96 P2D BSP16 BF721 450 300 300 250 50 40 30


    OCR Scan
    ot-223bsp19at1pzta42t1bf720t1+13bsp20at1sp19abf720sp20apzta98t1pzta92t1zt7513055l2955e3055ezta962n02lmarking 651 sot223 PDF

    2N02L

    Abstract: FT2N
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M edium P o w er Field E ffe c t Tran sisto r N-Channel Enhancement Mode Silicon Gate TMOS E-FET SOT-223 for Surface Mount iTT T h is a d v a n c e d E -F E T is a T M O S M e d iu m P o w e r M O S F E T d esig n ed to w ith sta n d high e n e rg y in th e a va la n ch e and c o m m u ta ­


    OCR Scan
    ot-2232n02lft2n PDF

    marking code J1 sot23

    Contextual Info: MMFT2N02EL Preferred Device Power MOSFET 2 Amps, 20 Volts N–Channel SOT–223 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This device is also designed with a low threshold voltage so it is fully enhanced with 5 Volts. This new


    Original
    mmft2n02elmarking code j1 sot23 PDF