BSP20 Search Results

Contextual Info: • bbSB^Bl DDESSMfl ^5T H A P X N AUER PHILIPS/DISCRETE BSP206 b7E D ; v P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and intended for use in relay, high-speed and line-transformer drivers.

BSP19

Abstract: BSP16 BSP20 SC-73
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D087 BSP19; BSP20 NPN high-voltage transistors Product data sheet Supersedes data of 1997 Mar 03 1999 Jun 01 NXP Semiconductors Product data sheet NPN high-voltage transistors BSP19; BSP20 FEATURES PINNING

BSP204A

Abstract: BSP204 UC673
Contextual Info: Philips Com ponents Data sheet status Product specification date of issue November 1990 FE A T U R E S • • BSP204/BSP204A P-channel enhancement mode vertical D-MOS transistor Q U IC K R E F E R E N C E DATA Direct interface to C-M O S, TTL, etc. High-speed switching

Contextual Info: Not Recommended for New Design Please Use FZTA92 SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSP15 ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE: – BSP20 PARTMARKING DETAIL: – BSP15 E C B ABSOLUTE MAXIMUM RATINGS.

Contextual Info: DISCRETE SEMICONDUCTORS DAT ndbook, halfpage M3D087 BSP19; BSP20 NPN high-voltage transistors Product data sheet Supersedes data of 1997 Mar 03 1999 Jun 01 NXP Semiconductors Product data sheet NPN high-voltage transistors BSP19; BSP20 PINNING FEATURES • Low current max. 100 mA

Contextual Info: BSP19 BSP20 SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in m iniature plastic packages intended for use in am plifier and switching applications. Com plem entary pnp types are BSP15/16. Q UICK REFERENCE D A T A BSP19 BSP20 Collector-base voltage open emitter

BSP206

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP206 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13B April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

Contextual Info: Transistors SMD Type Product specification BSP20A SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features High Voltage: V BR CEO of 250 and 350 Volts. +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Available in 12 mm Tape and Reel

Contextual Info: • hb53131 0D2SS44 204 BIAPX N AMER PHILIPS/DISCRETE BSP205 b7E ]> P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and intended fo r use in relay, high-speed and line-transformer drivers.

Contextual Info: O rder this data sheet by BSP19AT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSP19AT1 BSP20AT1 NPN Silicon E pitaxial Transistors M o to ro la P referre d D e vices This fam ily of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223

bt 1490 transistor

Abstract: bsp206 BT 1490 TRANSISTOR 1492 Philips MBB bt+1490+transistor
Contextual Info: •I bbSB'ìBl ÜDESSMfl T5T H A P X N AMER P H I L I P S / D I S C R E T E BSP206 b7E D P-CHANNEL ENHANCEMENT MODE VERTICAL D-MOS TRANSISTOR P-channel enhancement mode vertical D-MOS transistor in a m iniature SOT223 envelope and intended fo r use in relay, high-speed and line-transformer drivers.

BSP15

Abstract: BSP20 FMMTA42
Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage ✪ COMPLEMENTARY TYPE – BSP15 PARTMARKING DETAIL – BSP20 BSP20 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

BSP15

Abstract: BSP20 FMMTA92 DSA003678
Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSP15 ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage C COMPLEMENTARY TYPE: – BSP20 PARTMARKING DETAIL: – BSP15 E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage

BSP15

Abstract: BSP19 BSP20
Contextual Info: •i bb53T31 0055450 Tlfl H A P X N AMER PHIL IPS /DISCRETE BSP19 BSP20 b?E » SILICO N PLANAR EPITAXIAL TRANSISTO RS NPN transistors in m iniature plastic envelopes intended fo r use in a m plifier and switching applications. Com plem entary pnp types are BSP15/16.

Contextual Info: PART OBSOLETE - USE FZTA42 SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 3 – FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage ✪ COMPLEMENTARY TYPE – BSP15 PARTMARKING DETAIL – BSP20 BSP20 C E C B ABSOLUTE MAXIMUM RATINGS. PARAMETER

FE SOT223

Abstract: MAM287 BSP19 THERMAL CONSIDERATIONS
Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors BSP19; BSP20 FEATURES PINNING • Low current max. 50 mA PIN • High voltage (max. 350 V). DESCRIPTION 1 APPLICATIONS base 2,4 collector 3 emitter • Switching and amplification

BSP16T1

Abstract: BSP19A BSP19AT1 BSP20A BSP20AT1 SMD310 SP19A TRANSISTOR MOTOROLA
Contextual Info: MOTOROLA Order this document by BSP19AT1/D SEMICONDUCTOR TECHNICAL DATA BSP19AT1 BSP20AT1 NPN Silicon Epitaxial Transistor Motorola Preferred Devices This family of NPN Silicon Epitaxial transistors is designed for use as a general purpose amplifier and in switching applications. The device is housed in the SOT-223

smd transistor marking TL

Abstract: BSP20A FR MARKING SMD TRANSISTOR
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor BSP20A SOT-223 Unit: mm +0.2 3.50-0.2 6.50 Features High Voltage: V BR CEO of 250 and 350 Volts. +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 +0.2 -0.2 +0.2 0.90-0.2 +0.3 7.00-0.3 Available in 12 mm Tape and Reel

Contextual Info: •I bb5B^31 DQ2545A Tlfl H A P X N A PIER PHILIPS/DISCRETE BSP19 BSP20 b?E D y v SILICON PLANAR EPITAXIAL TRANSISTORS NPN transistors in miniature plastic envelopes intended for use in amplifier and switching applications. Complementary pnp types are BSP15/16.

Contextual Info: SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR BSP15 ISSUE 3 - FEBRUARY 1996_ FEATURES * High vCE0 * Low saturation voltage COMPLEMENTARY TYPE: - BSP20 PARTMARKING DETAIL: - BSP15 ABSOLUTE M A X IM U M RATINGS. SYM BO L PARAM ETER Collector-Base Voltage

Contextual Info: SOT223 NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISS U E 3 - FEBRUARY 1996 FEATU RES * H ig h V CE0 * Low saturation voltage O_ CO M PLEM EN TA RY TYPE - BSP15 PARTM ARKING D E T A IL - BSP20 ABSOLUTE M A X IM U M RATINGS. PARAM ETER SYM BO L

MDA741

Abstract: MDA751 BSP205
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BSP205 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor

Contextual Info: Philips Components D a ta s h eet s tatu s Product specification d a te o f issue November 1990 FEATURES • BSP204/BSP204A P-channel enhancement mode vertical D-MOS transistor QUICK REFERENCE DATA Direct interface to C-MOS, TTL, etc. • High-speed switching

BSP16

Abstract: BSP19 BSP20
Contextual Info: Philips Semiconductors Product specification NPN high-voltage transistors BSP19; BSP20 FEATURES PINNING • Low current max. 100 mA PIN • High voltage (max. 350 V). 1 2, 4 APPLICATIONS 3 DESCRIPTION base collector emitter • Switching and amplification