MTP20P06
Abstract: MTM20P06 AN569 MJE210 motorola 6810
Contextual Info: Order this data sheet by MTM20P06/D MoToRom SEMICONDUCTOR TECHNICAL DATA MTM20P06 Data Sheet Designer’s MTP20P06 Power Field Effect Enhancement-Mode P=ChanneI silicon These Gate TMOS TMOS switching solenoid o Silicon Power applications and relay FETs are designed
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mtm20p06/dmtm20p06mtp20p06an569+2mje210motorola 6810
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Contextual Info: MOTOROLA SC IME P I b3b?254 00*^030 3 a I XSTRS/R F MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTP20P06 Advance Information P o w e r Field E ffe c t T ra n sisto r P-Channel Enhancement-Mode Silicon Gate TMOS TM O S POW ER FET 20 A M PER ES rDS(on = 0.2 OHM
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MTP15N06E
Abstract: MTP12N10 XS630B1PAM12 MTP20N10 MTP15N06L MTP20N08 MTP20P06 MTP12N05 MTP12N05E MTP12N06
Contextual Info: - f §y £ fr tt € ? Wl ± £ Vd s or Vg s fê Ta=25‘ C Ig s s Pd Id * /CH Vd g W. Vd s (V) (V) (V) (W) (A) (nA) (V) ( M A) MTP12NQ5 MOT N 50 ± 2 0 12 75 MTP12N05E MOT N 50 12 40 MTP12N06 MOT N 60 ± 2 0 12 75 MTP12N08 MOT N 80 ± 2 0 12 75 M T P 12N08L
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mtp12n05o-220abmtp12n05et0-220ab+9mtp12n06mtp12n08mtp20n08mtp15n06emtp12n10xs630b1pam12mtp20n10mtp15n06lmtp20p06
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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dk101/do-22qi0020-hmfe9200+9buz84abuz90 equivalentirf150 mosfet amp circuitbuz35smtp40n06mirfz22 mosfet1rf620mtm12n10lmtp25n10e
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1RFZ40
Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
Contextual Info: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained
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dk101/d0020-frj1rfz401rf150+8mtp25n10emth7n50 transistormtp35n06ebuz80a equivalentbuz90 equivalentmtp40n06mmfe9200mth7n50
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit
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20P06
Abstract: YLE relay relay yle TP20P06 mtp20p MC14001 motorola 20p
Contextual Info: 6367254 MOTOROLA 96D X S T R S /R F SC Tb MOTOROLA D E p b 3h 7E S 4 r- 29~ ^ j 80096 ÜGßGCHb Order this data sheet by MTM20P06/D (□ SEMICONDUCTOR TECHNICAL DATA M T M 20P 06 M TP20P06 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancem ent-M ode
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mtm20p06/dtp20p06mk145bpds-3782+9c50651mtm20p06mtp20p0620p06yle relayrelay ylemtp20pmc14001motorola 20p
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20P06
Abstract: MTP20P06 ROS 480 AN569 MTM20P06 diode RJ
Contextual Info: Order this data sheet by MTM20P06/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M TM 20P 06 M TP20P06 Designer's Data Sheet Pow er Field Effect Transistor P-Channel Enhancem ent-Mode Silico n Gate T M O S TMOS POWER FETs 20 AMPERES rDS on = 0.2 OHM 60 VOLTS These TM O S Power FETs are designed for high speed power
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cp4071
Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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68b09sn74als04bnsn74als08nsn74als00an+16ca3046ua733lm311plm318ca309478h05cp4071data sheet ic 74082n4891ic 7408mda970a2mda25001854-0071mda25022n4342ic ttl 7400
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c5088 transistor
Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154
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1853impattc5088 transistortransistor c3207tlo84cn+7sec c5088in5355bd2817ac3207 transistortoshiba f630tlo81cpmc74hc533n
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Q2N4401
Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog
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mtp20p
Abstract: MTP20P06
Contextual Info: MOTOROLA SEM ICO N DU CTO R TECHNICAL DATA M TP20P06 Advance Information P o w e r Field E ffe ct T ra n sisto r P-Channel Enhancem ent-M ode S ilic o n G ate T M O S T M O S PO W ER FET 20 A M P E R E S rD S on = °-2 ° H M 60 V O L T S T h is TM O S Pow er F E T is de sign e d for high speed pow er
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