MBR360 Search Results

Contextual Info: VS-MBR350, VS-MBR350-M3, VS-MBR360, VS-MBR360-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy

Contextual Info: VS-MBR350 -M3 , VS-MBR360 (-M3) www.vishay.com Vishay Semiconductors Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop Cathode Anode • High frequency operation • High purity, high temperature epoxy

MBR360

Abstract: B350 B360 MBR350 MBR350RL MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap

Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MBR320/D MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with

MOTOROLA B360

Abstract: MBR340 B320 B330 B340 B350 B360 MBR320 MBR330 MBR350
Contextual Info: MOTOROLA Order this document by MBR320/D SEMICONDUCTOR TECHNICAL DATA MBR320 MBR330 MBR340 MBR350 MBR360 Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

MBR360

Abstract: Marking B360 B350 B360 MBR350 MBR350RL MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MBR360 Preliminary DIODE 3.0A, 60V SCHOTTKY BARRIER RECTIFIER  1 DESCRIPTION The UTC MBR360 is a 3.0A schottky barrier rectifier, it uses UTC’s advanced technology to provide customers with low forward voltage drop and high efficiency, etc.

Contextual Info: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA A x ia l L e a d R e c tifie r s MBR350 MBR360 . . employing the Schottky Barrier principle in a large area m e tal-to-silicon power diode. S ta te -o f-th e -a rt geometry features epitaxial construction with

MOTOROLA SEMICONDUCTOR B360

Abstract: MOTOROLA B360 MBR360 B350 B360 MBR350 voltage RECTIFIER Motorola voltage rectifier diode motorola
Contextual Info: MOTOROLA Order this document by MBR350/D SEMICONDUCTOR TECHNICAL DATA Axial Lead Rectifiers MBR350 MBR360 . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with

MBR360

Abstract: 20594 MBR350 MR360
Contextual Info: Bulletin PD-20594 04/01 MBR350 MBR360 3.0 Amp SCHOTTKY RECTIFIER Description/Features Major Ratings and Characteristics Characteristics MBR350 MBR360 Units IF AV Rectangular 3.0 A 50/60 V waveform VRRM The MBR350, MBR360 axial leaded Schottky rectifier has

MBR360

Contextual Info: MBR350/MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline Cathode Anode • Very low forward voltage drop RoHS • High frequency operation COMPLIANT • High purity, high temperature epoxy encapsulation for

MBR360

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap

MBR360

Abstract: MBR350 MBR320 B320 B330 B340 B350 B360 MBR330 MBR340
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices A xial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: DIGITRON SEMICONDUCTORS MBR320-MBR360 3A SCHOTTKY RECTIFIER MAXIMUM RATINGS Rating Symbol Peak repetitive reverse voltage Working peak reverse voltage DC blocking voltage VRRM VRWM VR Average rectified forward current @ TA = 65°C MBR 320 330 340 350 360 20

B350

Abstract: B360 MBR350 MBR350RL MBR360 MBR360RL mbr360l
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlap

MBR3150

Abstract: MBR380 MBR3200 MBR360 MBR150 MBR3100
Contextual Info: MBR360 thru MBR3200 Compact Technology REVERSE VOLTAGE - 60 to 200 Volts FORWARD CURRENT - 3.0 Amperes SCHOTTKY BARRIER RECTIFIERS DO-201AD FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capability

MBR360

Abstract: motorola b330
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M BR340 and MBR360 are M otorola Preferred Devices A xial Lead R e ctifie rs . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

Contextual Info: MBR350, MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance

MBR350

Abstract: MBR360 MR360 20594
Contextual Info: Bulletin PD-20594 rev. A 03/02 MBR350 MBR360 SCHOTTKY RECTIFIER 3.0 Amp Description/Features Major Ratings and Characteristics Characteristics MBR350 MBR360 Units IF AV Rectangular 3.0 A 50/60 V waveform VRRM IFSM @ tp = 5 µs sine 460 A VF @ 3 Apk, TJ = 25°C

MBR360

Abstract: MBR350
Contextual Info: MBR350 ~ MBR360 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 50 - 60 Volts IO : 3.0 Amperes DO-201AD FEATURES : * * * * * * * High current capability High surge current capability High reliability High efficiency Low power loss Low forward voltage drop Pb / RoHS Free

MBR360

Abstract: Diode MBR350
Contextual Info: MBR320 MBR340 MBR330 MBR350 MBR360 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBR340 and MBR360 are Motorola Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal

MBR360

Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

MBR360RLG

Abstract: MBR350 MBR350RL MBR350RLG MBR360 MBR360G MBR360RL
Contextual Info: MBR350, MBR360 MBR360 is a Preferred Device Axial Lead Rectifiers These devices employ the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlap

C-16

Abstract: MBR350 MBR360
Contextual Info: MBR350, MBR360 Vishay High Power Products Schottky Rectifier, 3 A FEATURES • Low profile, axial leaded outline • Very low forward voltage drop • High frequency operation Cathode Anode • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance