B3B72 Search Results

2N6116

Abstract: 2N6118 2N6117 2n6116 motorola Unijunction motorola programmable unijunction
Contextual Info: MOTOROLA SC DIODES/OPTO S5E D b3b7255 OQflOltS 1 • 2N6116 2N6117 2N6118 Silicon Program m able U nijunction Transistors . . . d e sign e d to enable the engineer to " p r o g r a m " unijunction characteristics such a s Rbb> V i lv> and Ip ^ m erely selecting tw o resistor values, Application includes

4C6 toroid

Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET

7805 smd

Abstract: SMD transistor Mo 7805 voltage regulator IC voltage regulator 7805 7805 regulator smd transistor smd 2b SMD 7805 REGULATOR IC 7805 SMD motorola rf Power Transistor amplifier 3HH
Contextual Info: M O T O R O L A SC 4bE D X ST RS /R F • b3b7254 DG^SEEl MOTOROLA " 3 HriOTb 7^ 3 5 ~C ß SEM IC O N D U C T O R TECHNICAL DATA TP303T The RF Line U H F P o w e r T ra n sisto r The TP3031 is designed for 960 MHz base stations in both analog and digital applica­

J0350

Abstract: JO3501 FTE801 JO3502 PTE801 J03501
Contextual Info: MOT OROL A SC XSTRS/R F 4bE D • b3b72SM 00*141% 3 ■NOTb -R 53-O I MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA J03501 J03502 PTE801 The RF Line NPN Silicon UHF Power Transistors . . . designed fo r 24 Volt UHF large-signal applications in industrial and commercial FM

MOTOROLA POWER TRANSISTOR

Abstract: TP2033 motorola rf Power Transistor TRANSISTOR A 225
Contextual Info: MOTOROLA SC X S T R S / R F 4bE D • b3b7254 00*15172 5 « n O T b 'T-33 -'Oa\ MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA TP2033 Advance Inform ation The RF Line V H F P o w e r T ran sisto r 30 W — 225 MHz VHF POWER TRANSISTOR NPN SILICON The TP2033 has been specifically designed and characterized fo r 12.5 V operation in

1620CTR

Abstract: common anode MUR diodes 1610CTR MUR1610CTR MUR1620CTR diode 160a motorola 221A-06 MUR1605CT MUR1605CTR MUR1615CTR
Contextual Info: MOTOROLA fciME » • SEMICONDUCTOR TECHNICAL DATA b3b725S OOflbM'ib TbS ■MOT? MOTOROLA SC DIODES/OPTO M UR1605CTR M UR1610CTR M UR1615CTR M UR1620CTR S w itch m o d e Dual Ultrafast Power Rectifiers . . . designed for use in negative switching po w er supplies, inverters and as free w h e e l­

MD6003

Abstract: MD6003F MD6001
Contextual Info: MOTORCLA SC XSTRS/R F 15E 0 I b3b7254 0G0bSS3 S | r-Ä 7 -Ä 7 M AXIM U M RATINGS MD6001.F MD6003 MD6002,F Sym bol MD6003F M06001,2 Rating Unit Vdc Collector-Emitter Voltage VcEO Collector-Base Voltage VCBO Emitter-Base Voltage V e BO 5.0 Vdc lc 500 mAdc Collector Current — Continuous

mpf4861a

Abstract: MPF4860 MPF4859A MPF4857A 2n4856 transistor F4859A MPF4859 mpf4861
Contextual Info: MOTOROL A SC 15E 0 I b3b7254 GGflb?^ 1 XSTRS/R F T-SS-2S' MPF4856, A thru MPF4861, A CASE 29-04, STYLE 5 TO-92 TO-226AA M A X I M U M R A T IN G S Sym bol Rating MPF4856.A MPF4859.A MPF4857.A MPF4860.A MPF48S8,A MPF4861.A Unit Drain-Source Voltage VDS +40

MCM84000AS60

Contextual Info: MOTOROLA SC M E H O R Y / A S I C M OTOROLA h S 1E ]> b3b7251 0003571 175 SEM ICO ND U C TO R • ■ TECHNICAL DATA MCM84000A MCM8L4000A Advance Information 4Mx8 Bit Dynamic Random A ccess Memory Module The M C M 8 4 0 0 0 A S is a 32M, dynam ic random a cc e ss memory (DRAM )

MC34050 "cross reference"

Abstract: MC34051 cross reference MC26LS32 AM26LS30 CROSS REFERENCE AM26L532 Am26LS32 "cross reference" MC75176 eia 232 quad line driver P646L MC75107
Contextual Info: ' MOTOROLA SC TELECOM 4bE D WÊ b3b72S3 Q QÔ 3 S 2 Q S MM0T5 Line Drivers General Purpose Output Current tprop Delay Capa» Time billty Max (ns) (mA) 15 15 S = Single Ended D = Differ­ ential Party Line Opera­ tion D Strobe or Enable 1/ 1/ 1/ l/ 1/ 1/

Contextual Info: 4bE D b3b72S4 GQTET? T • M0Tb"P33-3 | MOT OROL A SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6052HV Chip PNP Silicon Darlington Power Transistor DM0 unm Discrete Military Operation . . .designed for general-purpose am plifier and low-frequency switching applications.

chip die npn transistor

Contextual Info: 4bE D b3b7254 OQTSTSl M OT OR OL A 3 • HOTbT-31 XSTRS/R sc F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C3439HV Chip NPN Silicon Small-Signal Transistor DM0 m ini Discrete Military Operation . .designed for high-voltage, high-current applications in switching and amplifier service.

Contextual Info: 4bE D • b3b72S4 aOTERôl 1 ■HOTt"T=33-l"] MOTOROLA SC CXSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA 2C6193HV Chip PNP Silicon Medium-Power Transistor DMO JfJr.ji Utfuf . .for use in switching and wide-band amplifier applications. DÌSCTG tG • Saturation Voltage — 1.2 Vdc @ 5.0 Ade

2N5945

Abstract: 2N5946 MOTOROLA 2N5946 2N5945 Motorola
Contextual Info: T -33-Æ f MOTOROLA SC X S T R S / R F 4bE D b3b7254 0 0 T m i 2 4 • flôTb MOTOROLA ■ SEMICONDUCTOR 2N5944 2N5945 2N5946 TECHNICAL DATA The RF Line 2 .0 ,4 .0 ,1 0 W - 470 MHz RFPOWER TRANSISTORS NPN SILICON RF POWER TRANSISTORS NPN SILICON . . . designed for 7.0 to 15 Volts, U H F large signal amplifier applica*

2N6432

Abstract: 2N6432 MOTOROLA 2N6433
Contextual Info: MOTORGLA SC XSTRS/R F 1EE 0 I b3b725M üOñbMSa T | r ^ 7-j3 2N6432 2N6433 CASE 22-03, STYLE 1 TO-18 TO-206AA M A X IM U M RATINGS Symbol 2N6432 2N6433 U nit Collector-Emitter Voltage VCEO 200 300 Vdc Collector-Base Voltage VCBO 200 300 Vdc Emitter-Base Voltage

Contextual Info: MOTOROLA SC DIODES/OPTO 2SE D b3b72S5 0001161 5 T -à f-n MCR&164-67 (See 2N51681 Thyristors f e » '- - 4 ^ d S i Silicon Controlled Rectifiers M CR6200 S6210 S6 2 2 0 Series . . . designed for industrial and consumer applications such as power supplies,

MJ10016HX

Contextual Info: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall

bd529

Abstract: transistors bd525 BD530 B0525 BD525 BD525-1 BD525-5 BD526 BD527 BD528
Contextual Info: MOTOROLA SC 6367254 ÍXSTRS/R DF|b3b72S4 F> MOTOROLA. SC ÍXSTR S/R 96 D 8 0 6 0 7 F T DDflObO? S D - 3 3 - 0 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON A M PLIFIER TR A N SISTO R S 6 0 - 8 0 - 100 VOLTS 10 WATTS NPN SILICON AN N ULAR* A M P LIFIER TR A N S IS TO R S

MTM12N10

Abstract: 221A-06 25CC MTP12N10E
Contextual Info: MOTOROLA SC XSTRS/R F bflE D • b3b72S4 00TÔ57Û 72b »nOTb MOTOROLA ■ SEMICONDUCTOR TECHNICAL DATA M TM 12N 10 "M TP 12N 10E Designer's Data Sheet P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silico n Gate •Motorola Preferred Device

Microlab FXR

Abstract: BF431L MRF9011 MRF9011L SF-31N microlab tuner SF
Contextual Info: MOTOROLA SC XSTRS/R F MbE D • b3b7254 DORSOb'i 1 ■ N O T b MOTOROLA T - 'S H l ■ I SE M IC O N D U C T O R TECHNICAL DATA M RF 9011L BF431L* The RF Line N P N S ilic o n H igh -F re q u e n cy T ra n sisto r 'E u ro p e an Part Num ber . designed primarily for use in high-gain, low-noise small-signal amplifiers for

MCR68

Abstract: MCR69-1 motorola MCR69-2
Contextual Info: MOTOROLA SC DIODES/OPTO 31E I> 13 b3b72SS 0002040 2 ElflO T? M CR 68 Series M CR 69 Series Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors . . . designed for overvoltage protection in crowbar circuits. • Glass-Passivated Junctions for Greater Parameter Stability and Reliability

XC56200LC10

Abstract: XC56002FC66 56002FC66 56166FE60 56156FE60 2x256 DSP56001-RC20 SP56001FE20 XC56004FJ40
Contextual Info: MOTOROLA SC UC/UP bflE D • b3b724ê D12DM2Ö 2Mb ■ MOTI DSP PRODUCT Part MOQ Status Package Pin Speed Program ROM/RAM Data ROM/RAM Peripherals Comments DSP56100 Family General Purpose 16-Bit Fixed Point X C 56156FE40 36 S CQFP 112 4 0 MHz 64/2048 0/2048

motorola 2N4427

Abstract: 2N4427 MOTOROLA 2N4427 parameters SILICON DICE motorola MRF207
Contextual Info: MOTOROLA SC O I O D E S / O P T O } 6367255 MOTOROLA SC 34 I>F|b3b72SS 0D3Û0S3 1 DIODES/OPTO 34C 38053 D T~ 3 h 9 3 SILICON RF TRANSISTOR DICE (continued) 2C4427 DIE NO. — NPN LINE SOURCE — RF502.161 This die provides performance equal to or better than that of

L285

Contextual Info: MOTORCLA SC 1HE 0 § b3b7254 QOfiSMI? S | XSTRS/R F T ^ 3 3 -i> 7 MOTOROLA * SEMICONDUCTOR MPS-UIO TECHNICAL DATA NPN SILICON HIGH V O L T A G E A M P L IF IE R T R A N SIS TO R 4l NPN SILICON A N N U L A R T R A N SIS T O R . . . designed for high-voltage video and luminance output stages in