TP1940
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA TP1940 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode 300 W , 50 V, 108 M H z N -C H A N N E L M O S BROADBAND RF PO W ER FET T h e h ig h p o w e r, h ig h g a in a n d b ro a d b a n d p e rfo rm a n c e o f ea ch d e v ic e m a k e s p o s s ib le
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4C6 toroid
Abstract: UNELCO TP1940 108 motorola transistor 4C6 ferrite iWatt FERRITE TOROID dss125
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH GQRS l b f l MOTOROLA 3 ■ MOTb T=3^ - SEMICONDUCTOR TECHNICAL DATA T P 1940 The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode 300 W, 50 V, 108 MHz N-CHANNEL MOS BROADBAND RF POWER FET
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b3b72shtp194020bias4c6 toroid+6unelco108 motorola transistor4c6 ferriteiwattferrite toroiddss125
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2phx11136q-17motorola transistors mrf 947trimpots 3296transistor c5386+71n47402n5591 motorola2n5688cq 542 transistor npn motorolaequivalent transistor of 2sc3358hb215/dic cd 2399 gp
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Contextual Info: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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powes3666mrf38662n28572n3866+162n5943mrf904mrf5712n49582n31602n55832n4427 equivalent bfr91bfr90 equivalent2n5503mra1600-30tpv-595a2n3553 equivalentmrf477 equivalentmra0500-19l2n6084 equivalentmotorola transistor mrf239
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Contextual Info: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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atv5030atv5090batv6031atv6060h+15atv7050bal99lt1bas16lt1bas21lt1bav70lt1bav74lt1mled96brx49 scrmrf549mrf660mrf548mmbr2857lt1cr2428mpf3822mrf548 motorola
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1phx11136q-14mhw721a213001 s 6d transistoratv5030* motorola+72n5591 motorola13001 6d transistorbgy41mhw710-1construction linear amplifier 2sc19457119 amperexbf503
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ICS951461
Abstract: CQ533 218s6ecla21fg R5538 by503 TP2205 TP2136 b536 AF45 DIODE SMD SS338A
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION
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rs600msb600ba41-xxxxxars600+14rev500tp2123tp2124tp2125ics951461cq533218s6ecla21fgr5538by503tp2205tp2136b536af45 diode smdss338a
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TP2788
Abstract: TP2801 l xd 402 HAINAN3 mx25l8005m2c-15g NH82801HBM timer 8254 circuit LE88CLPM SI2315BDS-T1 20b1 diode
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION
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ba41-00844aba41-00845atp2074tp2075+16tp2076tp2077tp2735tp2736tp2737tp2754tp2788tp2801l xd 402hainan3mx25l8005m2c-15gnh82801hbmtimer 8254 circuitle88clpmsi2315bds-t120b1 diode
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1phx11136q-14a5 gne mosfetjo35012n4427 equivalent bfr91+72n5032n5160 motorolabf431bfr96hy 1906 transistorjo2015kd 2060 transistor
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SS338A
Abstract: Diode smd BD27 BD2430 cq521 18b2 diode BE513 3b506 HAINAN2 TP2041 B538
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION
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rs600msb600ba41-xxxxxars600+14rev500tp2165tp2123tp2124ss338adiode smd bd27bd2430cq52118b2 diodebe5133b506hainan2tp2041b538
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2n4427 MOTOROLA
Abstract: MRF220 TP9380 motorola 2N4427 motorola TP9380 MRF237 MRF234 TP9383 fm band broadcast transmitter mrf237 MOTOROLA
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b?ES4 GGT a f i MS 3 • MOTb T i'33-O S 6 6 -8 8 MHz BAND Power output chains up to 25 watts output are obtainable in the international VHF FM “Mid-Band” for which these transistors are optimized. Device Pout Output Power
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mrf229mrf23445a-09/1tp1940+132n4427mrf604mrf553mrf607mrf220mrf2372n4427 motorolatp9380motorola 2n4427motorola tp9380tp9383fm band broadcast transmittermrf237 motorola
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b712 smd
Abstract: schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell
Contextual Info: SENS P10 Owner : Kevin,Lee Signature : HK,Park Robin,Cho APPROVAL TAURUS MAIN BOARD BA41-10013A PBA:BA92-01563A, SMT:BA92-00563B MP 1.0 - 0321 MARCH,21,2001 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood
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sfd-p10kscd-p10k24sdd-p10k8srw-p10k8+16sfd-p10escd-p10e24sdd-p10e8srw-p10e82200maieee1394b712 smdschematic diagram inverter 2000wic25n040mt702ct712mhn2200atr888 smb diodetp2256tp2350c840 dell
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BA41-00808A
Abstract: BA41-00807A samsung schematic ICS95461 TP2136 tp2116 hainan3 HU-1M2012-121JT BA41-00809A 2u42
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents HAINAN3_INT C CPU : Chip Set :
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rs600msb600ba41-00807aba41-00808a+12rs600tp2656rev500tp2660samsung schematicics95461tp2136tp2116hainan3hu-1m2012-121jtba41-00809a2u42
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TP2801
Abstract: smd diode PG 303 ALC287 Q5 LED mx25l8005m2c-15g SS338A 52A3 bluetooth schematic d47 samsung schematic SAMSUNG ELECTRONICS BA41
Contextual Info: 4 3 2 1 SAMSUNG PROPRIETARY THIS DOCUMENT CONTAINS CONFIDENTIAL PROPRIETARY INFORMATION THAT IS SAMSUNG ELECTRONICS CO’S PROPERTY. DO NOT DISCLOSE TO OR DUPLICATE FOR OTHERS EXCEPT AS AUTHORIZED BY SAMSUNG. D D Table of Contents 1. COVER 2-7. DIAGRAM & ANNOTATION
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ba41-00774a/00732atp2740tp2741tp2751+16tp2750tp2749tp2748tp2747tp2746tp2745tp2801smd diode pg 303alc287q5 ledmx25l8005m2c-15gss338a52a3bluetooth schematic d47samsung schematicsamsung electronics ba41
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