UNELCO Search Results

transformer 0-12v

Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
Contextual Info: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

arco 465

Abstract: arco 469 SD1487 100WPEP arco 463
Contextual Info: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION POUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION The SD1487 is a 12.5 V Class C epitaxial silicon

capacitor 100uF 63V

Abstract: 100uf 63v electrolytic capacitor SD1457 Unelco
Contextual Info: SD1457 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS . . . 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION POUT = 75 W MIN. WITH 10.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1457 BRANDING SD1457 PIN CONNECTION DESCRIPTION

arco 468

Abstract: sd1446 arco 467 micrometals T50-2 M113 arco 463
Contextual Info: SD1446 RF & MICROWAVE TRANSISTORS HF/VHF APPLICATIONS . . . 50 MHz 12.5 VOLTS EFFICIENCY 55% COMMON EMITTER GOLD METALLIZATION POUT = 70 W MIN. WITH 10 dB GAIN .380 4LFL M113 epoxy sealed ORDER CODE SD1446 BRANDING SD1446 PIN CONNECTION DESCRIPTION The SD1446 is a 12.5 V Class C epitaxial silicon

SD1446

Abstract: M113 arco 468
Contextual Info: SD1446 RF POWER BIPOLAR TRANSISTORS UHF MOBILE APPLICATIONS FEATURES SUMMARY • 50 MHz ■ Figure 1. Package 12.5 VOLTS s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l

MOTOROLA circuit for mrf150

Abstract: motorola MRF150 mrf150 equivalent arco capacitors choke vk200 vk200 choke MRF150 "RF MOSFET" VK200-4B 2204B
Contextual Info: MOTOROLA Order this document by MRF150/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF150 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 50 Volts, 30 MHz Characteristics

MRF653

Abstract: MRF653 circuit test
Contextual Info: MOTOROLA Order this document by MRF653/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF653 Designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Specified 12.5 Volt, 512 MHz Characteristics

MRF141

Abstract: G10 zener diode 80 watt hf mosfet class AB hf bipolar 2204B AN211A J101 VK200 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF141/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF141 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Johanson Piston Trimmer

Abstract: J154 J329 J253 vk200 erie redcap capacitors MRF327 NPN RF Amplifier
Contextual Info: Order this document by MRF327/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF327 . . . designed primarily for wideband large–signal output amplifier stages in the 100 to 500 MHz frequency range. • Guaranteed Performance @ 400 MHz, 28 Vdc

hf class AB power amplifier mosfet

Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
Contextual Info: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

J120 MOSFET

Abstract: J115 mosfet AN211A MRF175LU VK200 MOSFET J140
Contextual Info: Order this document by MRF175LU/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF175LU N–Channel Enhancement–Mode Designed for broadband commercial and military applications using single ended circuits at frequencies to 400 MHz. The high power, high gain and

transistor K30A

Abstract: K30A transistor D1143 UNELCO SD1143 M135 33ph Arco 423 K30A
Contextual Info: m 140 Commerce Drive ff M ontgom eryville, PA 18936-1013 H / tS -n a n j T L j - t - r t . « i n llr l/C ff y P ro g re s s P o w e re d b y T e c h no log y S D Ì 143 Tel: 215 631-9840 RF & MICROWAVE TRANSISTORS 130. 230MHz FM MOBILE APPLICATIONS FM CLASS C TRANSISTOR

SD1012-3

Abstract: 1MHz VCO 2 watt carbon resistor M113 SD1012-03 2489E vco 17.5mhz 0060801
Contextual Info: H ftg r» Mnrm S iv n c r o s e m l Progress Powered by Technology 140 Commerce Drive I• I ontgom V I I I M w III W I jr w i l l w I IPA m m 18936-1013 IU w V V I \# I 1# M eryville, Tel: 215 631-9840 ^ S D 1 0 1 2 -3 RF & MICROWAVE TRANSISTORS 130 . 230MHz FM MOBILE APPLICATIONS

5659065-3B

Abstract: arco 463 56-590-65-3B 56590653B
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, To-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz

Contextual Info: MOTOROLA Order this document by MRF140/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF140 N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics

mrf641

Abstract: 1117 ADC
Contextual Info: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

MRF607

Abstract: 56-590-65-3B
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF607 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • 12.5V Silicon NPN, TO-39 packaged VHF & UHF Transistor 1.75 Watt Minimum Power Output @ 12.5V, 175 MHz

RF800

Abstract: MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A
Contextual Info: ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS

arco 469

Abstract: arco 465 100WPEP SD1487 arco 463
Contextual Info: SD1487 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . 30 MHz 12.5 VOLTS IMD −30 dB COMMON EMITTER GOLD METALLIZATION P OUT = 100 W MIN. WITH 12.0 dB GAIN .500 4LFL M174 epoxy sealed ORDER CODE SD1487 BRANDING SD1487 PIN CONNECTION DESCRIPTION

12v class d amplifier 100W

Contextual Info: ARF463AP1 ARF463BP1 D G S TO-247 Common Source RF POWER MOSFETs N - CHANNEL ENHANCEMENT MODE 125V 100W 100MHz The ARF463AP1 and ARF463BP1 comprise a symmetric pair of common source RF power transistors designed for pushpull scientific, commercial, medical and industrial RF power amplifier applications up to 100 MHz. They have been

DG704

Contextual Info: S G S -TH O M S O N SD1433 IM RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS 470 MHz 12.5 VOLTS CLASS C EFFICIENCY 60% COMMON EMITTER P o ut = 10 W MIN. WITH 8.0 dB GAIN PIN CONNECTION DESCRIPTION The SD1433 is a Class C epitaxial silicon NPN planar transistor designed for driver applications

Contextual Info: SGS-1H0MS0N SD1457 IEL[ RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS 108 MHz 28 VOLTS EFFICIENCY 75% COMMON EMITTER GOLD METALLIZATION P o u t = 75 W MIN. WITH 10.0 dB GAIN DESCRIPTION The SD1457 is a 28 V gold metallized epitaxial silicon NPN planar transistor designed for FM VHF

SU 179 transistor

Contextual Info: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz

Contextual Info: MOTOROLA Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF652 M RF652S Designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.