1N5925A Search Results

Contextual Info: 1N5925A Diodes General-Purpose Reference/Regulator Diode Military/High-RelN V Z Nom.(V) Reference Voltage10 @I(Z) (A) (Test Condition)37m Tolerance (%)10 P(D) Max. (W)1.5 Z(z) Max. (ê) Dyn. Imped.4.5 Temp Coef pp/10k Maximum Operating Temp (øC)200õ Package StyleDO-204AL

337j

Abstract: acpl-337j acpl337j
Contextual Info: ACPL-337J 4.0 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection, Active Miller Clamping, Fault and UVLO Status Feedback Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product

BYD74G

Abstract: FUR460 diode tfk 18db6a diode cross reference FAGOR SM6T33CA BZY97C tfk 240 1SMZG06GP D4SB80Z
Contextual Info: Cross Reference Every care has been taken in compiling this cross reference list which is published in good faith to assist engineers. Readers are reminded that this list is intended for guidance only. FAGOR ELECTRÓNICA can not be held responsible for any

hf class AB power amplifier mosfet

Abstract: Triode 805 motorola diode 8296 1N5925A AN211A AN215A AN721 MRF136 J973
Contextual Info: Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

SU 179 transistor

Contextual Info: MOTOROLA O rder this docum ent by M RF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N-Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N -C H A N N E L BROADBAND RF POW ER M OSFET Designed for broadband commercial and military applications up to 200 MHz

RF MOSFET

Abstract: MRF173 MRF173CQ FML C16
Contextual Info: ^s.mi'Con.dacto'i ^P , One, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 The RF MOSFET Line RF Power Field Effect Transistors MRF173 MRF173CQ N-Channel Enhancement Mode MOSFETs Designed for broadband commercial and military applications up to 200 MHz

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF174 The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed primarily for wideband large-signal output and driver stages up to 200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc

MRF162

Abstract: S21171 triode FU 33 MOTOROLA TRANSISTOR 712
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M R F162 The RF MOSFET Line RF P o w er Field E ffe c t Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance

RF MOSFETs

Abstract: "RF MOSFETs"
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RF173* M RF173CQ The RF MOSFET Line RF P o w er Field E ffe c t Transistors ‘Motorola Preferred Device N-Channel Enhancement Mode MOSFETs 80 W, 28 V, 175 MHz N-CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and military applications up to 200 MHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Pow er Field E ffect Transistor N-Channel Enhancement Mode Designed for wideband large-signal amplifier and oscillator applications to 500 MHz. • Guaranteed 28 Volt, 400 M Hz Performance Output Power = 2.0 Watts

equivalent for transistor tt 2206

Abstract: equivalent transistor TT 2206 transistor tt 2206 MRF163 TT 2206 transistor
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal output and driver applications up to 400 MHz range. • Guaranteed 28 Volt, 400 MHz Performance Output Power = 25 Watts

SELF vk200

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal amplifier and oscillator applications up to 400 MHz range. 5.0 W, to 400 MHz N-CHANNEL MOS BROADBAND RF POWER

sd1902

Abstract: MRF166 J126
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 30-500 MHz. • Low Crss — 4.5 pF Vns = 28 V •

transistor KA 7808

Abstract: RF134
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode . . . designed for wideband large-signal am plifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

alc 885

Abstract: "RF MOSFETs" 1N5925A AN211A AN721 MRF173 VK200
Contextual Info: Order this document by MRF173/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF173 RF Power Field Effect Transistor N–Channel Enhancement Mode MOSFET 80 W, 28 V, 175 MHz N–CHANNEL BROADBAND RF POWER MOSFET Designed for broadband commercial and military applications up to 200 MHz

Triode 805

Abstract: Arco 403 arco 406 motorola diode 8296 ZENER A34 1N5925A AN215A AN721 MRF134 MRF134 - 176
Contextual Info: Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

zener 7.5 B 47

Abstract: zener 7.5 B 45 836 zener zener 7.5 B 20 650 Zener ZENER 18.2 zener 416 zener 6 B 2 zener 12 v 500 ma 1214B
Contextual Info: Data Sheet 1.5 Watt ZENER DIODES 3.3V to 200V JEDEC D0-41 .205 .160 1N5913.5956 Series Mechanical Dimensions Description 1.00 Min. .080 .107 .031 typ. Features n WIDE VOLTAGE RANGE n 5 & 10% VOLTAGE TOLERANCES AVAILABLE n MEETS UL SPECIFICATION 94V-0 Maximum Ratings

6a3 diode zener

Abstract: 6a3 zener MRF136 zener motorola 1N5925A AN211A AN215A AN721 motorola MRF136 j331
Contextual Info: MOTOROLA Order this document by MRF136/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistors MRF136 N-Channel Enhancement-Mode MOSFET Designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in single ended configuration.

MRF134

Abstract: transistor motorola 359 zener motorola 1N5925A AN215A AN721 alc 266
Contextual Info: MOTOROLA Order this document by MRF134/D SEMICONDUCTOR TECHNICAL DATA RF Power Field-Effect Transistor MRF134 N–Channel Enhancement–Mode . . . designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range. • Guaranteed 28 Volt, 150 MHz Performance

FERROXCUBE VK200

Abstract: motorola zener mosfet j122 vk200 DV2820 VK200-19 VK-200-19 VK-200 BLF244 and equivalent j122 mosfet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF166 MRF166C The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily fo r wideband large-signal output and driver from 3 0 -5 0 0 MHz.

Contextual Info: ACPL-336J 2.5 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection, Active Miller Clamping, Fault and UVLO Status Feedback Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product

Contextual Info: ACPL-336J 2.5 Amp Gate Drive Optocoupler with Integrated VCE Desaturation Detection, Active Miller Clamping, Fault and UVLO Status Feedback Data Sheet Lead (Pb) Free RoHS 6 fully compliant RoHS 6 fully compliant options available; -xxxE denotes a lead-free product