DV2820 Search Results

VMP4

Abstract: siliconix vmp4 DV28120V DV2810S 57-1522 DV2820W DV28120U DV2805S DV2805W DVD030S
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z DV2810S DV2810W DV2810Z 175 175 175 175 175 175 DV2820S DV2820W DV2820Z DV2840S DV2840W DV2880T DV2880U

DV2820S

Abstract: DV2820 57-9130 5b4a sb4s
Contextual Info: - 5642205 M/A-COM P H I INCSS DE~|5L4S50S GDDD4l44 7 7 DV2820S N-Channel Enhancement - Mode RF Power FETs 175MHz 20-35V 20 W 10dB HF/VHF Amplifiers Class A, B or C High Dynamic Range Amp. Package T yp e S FEATURES • 2 0 :1 VSW R ■ N o Therm al Runaw ay

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

sd1902

Abstract: MRF166 J126
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field E ffect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 30-500 MHz. • Low Crss — 4.5 pF Vns = 28 V •

FERROXCUBE VK200

Abstract: motorola zener mosfet j122 vk200 DV2820 VK200-19 VK-200-19 VK-200 BLF244 and equivalent j122 mosfet
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF166 MRF166C The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs 20 W, 500 MHz MOSFET BROADBAND RF POWER FETs Designed primarily fo r wideband large-signal output and driver from 3 0 -5 0 0 MHz.

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc

y-parameter

Abstract: DV2805S DV2805W trimmer capacitors arco 402 380SOE FD110 VMP4 dvd150t DV2820W DV2805Z
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

Siliconix VMOS

Abstract: 500 watts amplifier schematic diagram siliconix an80 VMP4 150 watts power amplifier layout F627-8 dv2820 DVD030S dv2880t 500 watts amplifier schematic diagram pcb layout
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

57-9130

Abstract: VMP4 DV2820W DV28120 DVd030s DV28120V DV2805S DV2805W DV2880T DV2810S
Contextual Info: RF Power FETs Selector G uide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

VMP4

Abstract: DV28120T DV2820S DV28120V DV2810S DV28120U DVD150T en 60252-1 DV2810W DV2820W
Contextual Info: RF Power FETs Selector G uide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BV q s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175

chw marking sot23

Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Contextual Info: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

DV28120T

Abstract: DV2820 DV28120 DV2805 DV28120U ARCO 0.1 Z
Contextual Info: M/ A-COH P H I I NC _ ÖS DE 1 5 ^4 2 5 0 5 OOOCmtiö " T DV28120T • DV28120U N-Channel Enhancement-Mode RF Power FETs FEATURES Package Type T 175 MHz 2 0 -3 5 V 120 W Package Type U ■ 20:1 VSWR ■ No Thermal Runaway ■ Broadband Capability ■ Class A , B, C, D, E

MOTOROLA J210

Abstract: F 2452 mosfet MRF166C microstrip line SD1902 DV2820 612 Mosfet MOTOROLA RF MOSFET Driver zener motorola 1N5925A
Contextual Info: MOTOROLA Order this document by MRF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • Low Crss — 4.5 pF @ VDS = 28 V

F 2452 mosfet

Abstract: DV2820 0823L R K J 0822
Contextual Info: MOTOROLA O rder this docum ent by M RF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed primarily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. •

F627-8Q1

Abstract: F627-8-Q1 indiana general DVD150T DVd030s indiana general ferrite transformer cores VMP4 Indiana general ferrite F627 DV2820W
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

DV2840S

Abstract: DV2840W DV2840T DV2880 DV2820 dv2840 DV28120 lv 02a DV2810 SEMCO
Contextual Info: Siliconix N-Channel Enhancement Mode RF Power FETs FEATURES • In fin ite VSW R ■ N o Therm al Runaway ■ Broadband Capability Package T y p e T Package T y p e S Package T y p e W .500 SOE Flange .380 SOE Flange C -2 2 0 ■ Class A , B, C, D , E ■

SD1902

Abstract: BLF244 DV2820 MRF136 MRF166C VK200 MRF166 F 2452 mosfet
Contextual Info: Order this document by MRF166C/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500 MHz. • MRF166C — Guaranteed Performance at 500 MHz, 28 Vdc

DV2820

Abstract: SD1902
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement Mode MOSFETs Designed prim arily for w ideband large-signal output and driver from 3 0 -5 0 0 MHz. • Low C rss — 4.5 pF @ V ds = 28 V • MRF166C — Typical Performance at 400 MHz, 28 Vdc

j580

Abstract: DV2820
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166C N-Channel Enhancement Mode MOSFETs Designed prim arily for wideband large-signal output and driver from 3 0 -5 0 0 MHz. • Low C rss — 4.5 pF @ V p s = 28 V

VMP4

Abstract: siliconix vmp4 Transistor VMP4 DVD150T DV28120T DV2840 DV2880T dv2880 DV2810W DV2805W
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

DVD150T

Abstract: DV2810S DV2810W DV2805S DV2805W DV2805Z DV2810Z DV2820S DV2820W DV2820Z
Contextual Info: RF Power FETs Selector Guide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5

MRF166 211-07

Abstract: motorola J122 MOTOROLA J210 SD1902 BLF244 and equivalent F 2452 mosfet zener motorola 1N5925A J651 DV2820
Contextual Info: MOTOROLA Order this document by MRF166/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF166 MRF166C N–Channel Enhancement Mode MOSFETs Designed primarily for wideband large–signal output and driver from 30 – 500

VMP4

Abstract: DV28120V DV28120U siliconix vmp4 DV2840W DV2840S dv2820 DV2805S DV2805W DV2810S
Contextual Info: RF Power FETs Selector G uide RF Power FETs Selector Guide Contd 28 Volt DC — 300 MHz Series Rated Power Out (Watts) @ 28V d c Min. Gain (dB) 28 V, 175 MHz Min. BVq s s dJc (°C/W) Part Number Test Frequency* (MHz) DV2805S DV2805W DV2805Z 175 175 175 5