MRF652 Search Results

Contextual Info: MOTOROLA Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistors MRF652 M RF652S Designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz.

MRF6522-5

Abstract: MOSFET J132 mosfet j142 J132 mosfet 5r1 mosfet transistor transistor zo 607 ZO 607 MA MRF6522-5R1 smd transistor 2x 4 581 transistor motorola
Contextual Info: MOTOROLA RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A and Class AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–5R1 has been specifically designed for use in Communications Network GSM base stations. The

Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use

Contextual Info: <zSs.mi- 2onductoi <U~ to ducts., LJYLC. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN Silicon RF Power Transistors MRF652 MRF652S MAXIMUM RATINGS Rating Symbol Value Unit Vdo Collector-Emitter Voltage

921 smd transistor

Contextual Info: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

RE7Z

Abstract: MRF652
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF652 MRF652S NPN Silicon RF Power Transistors . . designed for 12.5 Vdc UHF large-signal, amplifier applications in industrial and com ­ mercial FM equipm ent operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics

Contextual Info: MOTOROLA Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband performances of this device makes it ideal for large–signal, common source

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

Contextual Info: MRF6522 - 70 Rev. 7, 1/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

MRF652S

Contextual Info: MRF652S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF652S is Designed for UHF large signal, amplifier Applications in FM equipment up to 512 MHz. PACKAGE STYLE .280 4L PILL FEATURES: A • Common Emitter • PG = 10 dB at 5.0 W/512 MHz • Omnigold Metalization System

SPS 16-H

Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3 SMD potentiometer
Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

sem 2005

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF6522–60/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-60 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high

BC847

Abstract: LP2951 MRF6522-70 MRF6522-70R3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF6522 - 70 Rev. 8, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6522-70R3 Designed for GSM 900 frequency band, the high gain and broadband performance of this device make it ideal for large - signal, common source

"RF MOSFET"

Abstract: BC847 LP2951 MRF6522-70 MRF6522-70R3
Contextual Info: MOTOROLA Order this document by MRF6522–70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF6522-70 MRF6522-70R3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for GSM 900 frequency band, the high gain and broadband

j327

Abstract: MRF6522-60 motorola rf device data book 360B-04 "RF MOSFET" MOTOROLA ELECTROLYTIC CAPACITOR motorola ups schematic MRF184 2001RF
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–60/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-60 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies up to 1.0 GHz and specified for the GSM 925 – 960 MHz band. The high

MRF6522-10

Abstract: MRF6522-10R1 10R1 Ni200 mosfet 4496
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the

j608

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use in Communications Network GSM base stations. The package offers the

Contextual Info: MRF652 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)16 V(BR)CBO (V)36 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)25 Minimum Operating Temp (øC)-65þ Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)15

LP2951

Abstract: BC847 921 smd transistor
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6522 - 70/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522−70R3 N - Channel Enhancement - Mode Lateral MOSFET Freescale Semiconductor, Inc. Designed for GSM 900 frequency band, the high gain and broadband

MOS marking JC

Abstract: SOT c5 87 BC847 EB212 LP2951 MRF6522-70 MRF6522-70R3 marking amplifier j02 smd transistor marking C14 r
Contextual Info: Document Number: MRF6522-70 Rev. 9, 10/2008 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET MRF6522-70R3 LIFETIME BUY Designed for GSM 900 frequency band, the high gain and broadband

j608

Abstract: 10R1 MRF6522-10R1
Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET Designed for Class A–AB common source, linear power amplifiers in the