MD6002 Search Results

MD6003

Abstract: MD6003F MD6001
Contextual Info: MOTORCLA SC XSTRS/R F 15E 0 I b3b7254 0G0bSS3 S | r-Ä 7 -Ä 7 M AXIM U M RATINGS MD6001.F MD6003 MD6002,F Sym bol MD6003F M06001,2 Rating Unit Vdc Collector-Emitter Voltage VcEO Collector-Base Voltage VCBO Emitter-Base Voltage V e BO 5.0 Vdc lc 500 mAdc Collector Current — Continuous

Monolithic Transistor Pair

Abstract: MD6002
Contextual Info: MD6002 Complementary Monolithic Transistor Pair 67.00 Transistors Multiple Transisto. Page 1 of 1 Enter Your Part # Home Part Number: MD6002 Online Store MD6002 Diodes Complementary Monolithic Transistor Pair Transistors Integrated Circuits Optoelectronics

Contextual Info: MO TO RO LA SC X ST RS /R F 4bE B L.3b?2S4 Q D R S b l ? 2 « n O T b 7^5^5 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 PRELIMINARY DATA mini MD6002FHXV/HS (DUAL) MQ6002HXV/HS (QUAD) Discrete Military Operation PROCESSED TO MIL-S-19500/XXX SURFACE MOUNTABLE

MD6002

Abstract: MD6003 MD6001 MD6001F MD6003F MQ6001 MQ6002 LB-216 VRP11
Contextual Info: MD6001, F silicon MD6002, F MD6003, F MQ6001, MQ6002 M U L T IP L E SI LIC O N A N N U L A R T R A N S IS T O R S NPN, PNP SIL IC O N M U L T IP L E T R A N S IS T O R S . . designed for use as differential amplifiers, dual general*purpose switches and amplifiers, front end detectors, and temperature

91010-01TX

Abstract: MHQ6002HX MD6002 MHQ6002
Contextual Info: 4bE J> • b3b7254 GQISfiTB 4 ■ MOTb“F ’^ v £ ? MOTOROLA SC XSTRS/R F MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 MD6002HX, HXV (DUAL) MD6002FHXV (DUAL) *MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors

MHQ6002HX

Abstract: MHQ6002 MD6002 610A-04 MD6002F MD6002FHXV MD6002HX MQ6002 MQ6002HXV
Contextual Info: MD6002HX, HXV DUAL MD6002FHXV (DUAL) MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) CRYSTALONCS 2805 Veterans Highway Suite *4 Rnokonkoma, N.Y. 11779 Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors . . designed for general-purpose amplifier and switching applications.

MHQ6002HX

Abstract: MQ6002 MD6002
Contextual Info: MD6002HX, HXV DUAL MD6002FHXV (DUAL) MHQ6002HX, HXV (QUAD) MQ6002HXV (QUAD) CRYSTALONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 Dual/Quad NPN/PNP Complementary Pairs Small-Signal Transistors . . .designed for general-purpose amplifier and switching applications.

MD8003

Abstract: 2N2453 2N2916 2N3726 MD7003A MD6001 MD6001F MD6002 MD6002F MD6003
Contextual Info: MULTIPLE SMALL-SIGNAL TRANSISTORS continued Dual Transistors (continued) ID ? 2 2 Subscript Ref. Point hFE1 MD6001 MD6001F MD6002 MD6002F CG CG CG CG .575 0.35 .575 0.35 A A A A 30 30 30 30 MD6003 MD6003F MD6100 MD6100F MD7000 MD7001 CA CA CA CA NA PA .575 A

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

MMBF112L

Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Contextual Info: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

21x21

Abstract: MM554 tray bga 45x45 bga X13769XJ2V0CD00 CPGA132 LA010 P14DH-100-300A2-1
Contextual Info: 検索ツール 1. ツールバーの アイコンをクリックしてください。 2. ［検索］のダイアログ・ボックスが表示されます。 3. 検索したいパッケージのNECコードを入力して， 検索 F をクリックしてください。

dip 28

Abstract: "lead material" DIP
Contextual Info: TUBE CONTAINER UNIT : mm 8.6 15.5 18.3 11.2 MD600-1A 22.4 MD600-2A Length : 501±2.0 +0.3 Thickness : 0.7−0.2 Tolerance : ±0.4 Material : Plastic With Antistatic Finish Applied Package Quantity(pcs) 24-Pin Plastic DIP MAX. 14 28-Pin Plastic DIP MAX. 12

p42c

Abstract: SC-551-42 h 033 0007R P42C-70-600B-1
Contextual Info: Packing Name Magazine MD600-1A MD600-2A 42 pin Shrink DIP 600 mil 42 22 1 21 A K I L J F D C N R M M H B G NOTES 1) Each lead centerline is located within 0.17 mm (0.007 inch) of its true position (T.P.) at maximum material condition. 2) Item "K" to center of leads when formed parallel.

powec rm 1110

Abstract: rm 1100 powec MPC1000 transistors JX 6822 A inverter welder 4 schematic SAA 14Z transistor SI 6822 stg 8810 PL 15Z DIODE germanium transistor
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY SERIES A VOLUME HI prepared by Technical Inform ation Center The in fo rm a tio n in this book has been ca re fu lly checked and is believed to be reliable; however, no re sp o n sib ility is assumed fo r inaccuracies. F u rthe rm o re, this in fo rm a tio n does no t convey to the purchaser o f sem iconductor

transistors BC 557C

Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
Contextual Info: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and

h 033

Abstract: SC-552-48
Contextual Info: Packing Magazine Name MD600-1A MD600-2A 48 pin Shrink DIP 600 mil 48 25 1 24 A K L I J H G F D C N M NOTES 1) Each lead centerline is located within 0.17 mm (0.007 inch) of its true position (T.P.) at maximum material condition. 2) ltem "K" to center of leads when formed parallel.

MD8002

Abstract: 2n2903
Contextual Info: Dual Transistors TO-78 Case P q @ T ^=2 5°C =6 0 0m W Total Both Die Equal Power TYPE NO. DESCRIPTION «C v CBO v CEO (mA) (V) (V) hl=E IC ® V CE (mA) (V) VCE(SV T ) ® ' C <V) ' MAX (mA) ' % (MHz) MATCHING Hf e V BE *TYP MIN % <">V) MIN MAX NPN AMPL/SWITCH

varactor 36z

Abstract: germanium halbleiter index transistor Halbleiter Buch 2n5347 2n3054 working of reactance modulator JE2955 germanium transistor 2N3902
Contextual Info: TH€ SEMICONDUCTOR DATA LIBRARY FIRST EDITION prepared by Technical Information Center T h e in fo rm a tio n in th is bo o k has been c a re fu lly checked and is believed to be re lia b le ; ho w ever, no re s p o n s ib ility is assumed fo r inaccuracies. F u rth e rm o re , th is in fo rm a tio n does n o t convey to the purchaser o f s e m ic o n d u c to r

MD8003

Abstract: MD-113 MD7005 2N4854 MD6100
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION •c (mA) v CBO v CEO 00 (V) «C (mA) :E ®Vc6 (V) h MATCHING VCE(SAT )® >C (mA) 00 (MHz) h FE VBE MAX 0.5 % <mV) 150 *TYP MIN 200 60 MIN 50 MiN 35 MAX PNP AMPUSWITCH MAX 600 mm MD982 — 10 10

Dual Transistors TO-78

Abstract: MD6100 MD7002 MD7003A md2369 MD7005 MD2219A MD2369A 2N4854 MD2905A
Contextual Info: Dual Transistors TO-78 Case Continued TYPE NO. DESCRIPTION IC VCBO VCEO (mA) (V) (V) hFE MAX MIN MIN MIN MAX @ IC @ VCE (mA) (V) VCE (SAT ) (V) @ IC (mA) fT (MHz) MATCHING hFE VBE *TYP MIN % (mV) 0.5 150 200 - - 10 0.4 150 200 - - 1 0.25 10 500 - -

MRF660

Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522
Contextual Info: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor

NEC A39A

Abstract: NEC A39A 240 SOP28 330 mil land pattern NEC A39A 8 PIN mjh 106 120-PIN 282 185 01 smd TRANSISTOR code b6 ED-7500 transistor a39a SIP 400B
Contextual Info: IC PACKAGE MANUAL 1991, 1992, 1994, 1996 Document No. C10943XJ6V0IF00 Previous No. IEI-635, IEI-1213 Date Published January 1996 P Printed in Japan CHAPTER 1 PACKAGE OUTLINES AND EXPLANATION CHAPTER 2 CHAPTER 3 1 THROUGH HOLE PACKAGES 2 SURFACE MOUNT PACKAGES

MJ1005

Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: